A semiconductor device includes a first die, a second die on the first die, and a third die on the second die, the second die being interposed between the first die and the third die. The first die includes a first substrate and a first interconnect structure on an active side of the first substrate. The second die includes a second substrate, a second interconnect structure on a backside of the second substrate, and a power distribution network (PDN) structure on the second interconnect structure such that the second interconnect structure is interposed between the PDN structure and the second substrate.

A method for manufacturing a pressure detecting unit for a measuring device for measuring a pressure status value of a plant specimen. The method includes mounting a sensor unit for detecting the pressure status value at a carrier substrate, fastening a frame to the carrier substrate, the frame including a fastening surface, a contact surface oriented opposite the fastening surface and an inner surface defining an opening and extending between the fastening surface and the contact surface, the frame being situated at the carrier substrate in such a way that the fastening surface faces the carrier substrate and the inner surface surrounds the sensor unit, and filling the opening of the frame with a filling material for forming an elastic pressure coupling layer. A pressure detecting unit for a measuring device for measuring a pressure status value of a plant specimen is also described.

A method for manufacturing a pressure detecting unit for a measuring device for measuring a pressure status value of a plant specimen. The method includes mounting a sensor unit for detecting the pressure status value at a carrier substrate, fastening a frame to the carrier substrate, the frame including a fastening surface, a contact surface oriented opposite the fastening surface and an inner surface defining an opening and extending between the fastening surface and the contact surface, the frame being situated at the carrier substrate in such a way that the fastening surface faces the carrier substrate and the inner surface surrounds the sensor unit, and filling the opening of the frame with a filling material for forming an elastic pressure coupling layer. A pressure detecting unit for a measuring device for measuring a pressure status value of a plant specimen is also described.

Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a first plurality of conductive interconnect lines in and spaced apart by a first ILD layer, wherein individual ones of the first plurality of conductive interconnect lines comprise a first conductive barrier material along sidewalls and a bottom of a first conductive fill material. A second plurality of conductive interconnect lines is in and spaced apart by a second ILD layer above the first ILD layer, wherein individual ones of the second plurality of conductive interconnect lines comprise a second conductive barrier material along sidewalls and a bottom of a second conductive fill material, wherein the second conductive fill material is different in composition from the first conductive fill material.

A semiconductor package includes a semiconductor die, a redistribution structure and connective terminals. The redistribution structure is disposed on the semiconductor die and includes a first metallization tier disposed in between a pair of dielectric layers. The first metallization tier includes routing conductive traces electrically connected to the semiconductor die and a shielding plate electrically insulated from the semiconductor die. The connective terminals include dummy connective terminals and active connective terminals. The dummy connective terminals are disposed on the redistribution structure and are electrically connected to the shielding plate. The active connective terminals are disposed on the redistribution structure and are electrically connected to the routing conductive traces. Vertical projections of the dummy connective terminals fall on the shielding plate.

This disclosure discloses a light-emitting bulb. The light-emitting bulb includes a cover, an electrical associated with the cover, a board arranged between the cover and the electrical connector, and a first light-emitting device disposed on the board. The first light-emitting device includes a carrier having a first side and a second side, a first electrode part disposed near the first side and extending to the second side, a bended part disposed near to the second side and spaced apart from the first electrode part, and a second electrode part extending from the bended part to the first side. No light-emitting diode unit is arranged on the second electrode part.

This disclosure discloses a light-emitting bulb. The light-emitting bulb includes a cover, an electrical associated with the cover, a board arranged between the cover and the electrical connector, and a first light-emitting device disposed on the board. The first light-emitting device includes a carrier having a first side and a second side, a first electrode part disposed near the first side and extending to the second side, a bended part disposed near to the second side and spaced apart from the first electrode part, and a second electrode part extending from the bended part to the first side. No light-emitting diode unit is arranged on the second electrode part.

A memory device includes first and second semiconductor layers. The first semiconductor layer includes wordlines and bitlines, an upper substrate, and a memory cell array. The memory cell array includes a memory blocks. The second semiconductor layer includes a lower substrate, and an address decoder. Each memory block includes a core region including a memory cells, a first extension region adjacent to a first side of the core region and including a plurality of wordline contacts, and a second extension region adjacent to a second side of the core region and including an insulating mold structure. The second extension region includes step zones and at least one flat zone. Through-hole vias penetrating the insulating mold structure are in the flat zone. The wordlines and the address decoder are electrically connected with each other by at least the through-hole vias.

A memory device includes first and second semiconductor layers. The first semiconductor layer includes wordlines and bitlines, an upper substrate, and a memory cell array. The memory cell array includes a memory blocks. The second semiconductor layer includes a lower substrate, and an address decoder. Each memory block includes a core region including a memory cells, a first extension region adjacent to a first side of the core region and including a plurality of wordline contacts, and a second extension region adjacent to a second side of the core region and including an insulating mold structure. The second extension region includes step zones and at least one flat zone. Through-hole vias penetrating the insulating mold structure are in the flat zone. The wordlines and the address decoder are electrically connected with each other by at least the through-hole vias.

Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate having a surface; a die having a first surface and an opposing second surface, wherein the first surface of the die is coupled to the surface of the package substrate; and a cooling apparatus that may include a conductive base having a first surface and an opposing second surface, wherein the first surface of the conductive base is in thermal contact with the second surface of the die, and a plurality of conductive structures on the second surface of the conductive base, wherein an individual conductive structure of the plurality of conductive structures has a width between 10 microns and 100 microns.