A terminal case formed by integrally molding a lead frame and a case that has internally an inner face on which the lead frame is mounted and has externally a step portion fixed to a circuit block having an insulating substrate and semiconductor chips formed on the insulating substrate. An opening portion is formed between the step portion and the inner face so as to extend through them, and the opening portion is filled with an adhesive to bond the insulating substrate to the step portion. Since a connecting area to which a bonding wire of the lead frame is ultrasonically bonded is fixed, it is possible to reduce the bonding failures of the lead frames.

A terminal case formed by integrally molding a lead frame and a case that has internally an inner face on which the lead frame is mounted and has externally a step portion fixed to a circuit block having an insulating substrate and semiconductor chips formed on the insulating substrate. An opening portion is formed between the step portion and the inner face so as to extend through them, and the opening portion is filled with an adhesive to bond the insulating substrate to the step portion. Since a connecting area to which a bonding wire of the lead frame is ultrasonically bonded is fixed, it is possible to reduce the bonding failures of the lead frames.

A half-bridge power semiconductor module includes an insulating wiring board including a positive-electrode wiring conductor, a bridge wiring conductor, and a negative-electrode wiring conductor arranged on or above a single insulating plate in such a way as to be electrically insulated from each other. The back-surface electrodes of a high-side power semiconductor device and a low-side power semiconductor device are joined to the front sides of the positive-electrode wiring conductor and the bridge wiring conductor. Front-surface electrodes of the high-side power semiconductor device and the low-side power semiconductor device are connected to the bridge wiring conductor and the negative-electrode wiring conductor by a plurality of bonding wires and a plurality of bonding wires.

A semiconductor device includes a case enclosing a region where a semiconductor element as a component of an electric circuit exists. A resin part is fixed to an inside of the case in contact with the region. The resin part is provided with a conductive film, which is a part of the electric circuit. The conductive film is provided in the resin part so that the conductive film comes into contact with the region.

A semiconductor device includes a substrate, a conductive portion, a sealing resin, a plurality of semiconductor chips, and a plurality of temperature detection elements. The substrate has a substrate obverse surface and a substrate reverse surface that face opposite sides in a thickness direction. The conductive portion is formed on the substrate obverse surface. The sealing resin covers at least a part of the substrate. The sealing resin also covers the entire conductive portion. The plurality of semiconductor chips are disposed on the substrate obverse surface. The plurality of temperature detection elements are disposed on the substrate obverse surface. The number of temperature detection elements is equal to or greater than the number of semiconductor chips.

According to example embodiments, a substrate for a power module includes first to third parts spaced apart from each other, where the third part surrounds the first and second parts, and a conductive layer on the first to third parts. A terminal of a first polarity is connected to the first part, and a terminal of a second polarity is connected to the second part. The first and second terminals may be spaced apart from each other and each have a coupling part, a body, and a contact part. The bodies of the first and second terminals may overlap each other. A power module may include the substrate.

Described is a power semiconductor module that includes: a frame made of an electrically insulative material; a first substrate seated in the frame; a plurality of power semiconductor dies attached to the first substrate; a plurality of signal pins attached to the first substrate and electrically connected to the power semiconductor dies; a busbar extending from the first substrate through a side face of the frame; a current sensor module seated in a receptacle of the frame in sensing proximity of the busbar, the current sensor module including a current sensor attached to a circuit board; and a potting material fixing the current sensor module to the frame such that no air gap is present between the current sensor and the busbar. The potting material contacts the frame and the current sensor. Methods of producing the power semiconductor module are also described.

A power semiconductor device includes a frame, a semiconductor element, a substrate, and a sealing resin. The semiconductor element is disposed on the frame. The substrate is disposed on a side of the frame opposite to a side on which the semiconductor element is disposed. The sealing resin seals the semiconductor element and the substrate. The substrate includes a metal sheet, a first insulating sheet on one main surface side of the metal sheet, and a second insulating sheet on the other main surface side of the metal sheet. The metal sheet has flexibility at a normal temperature.

A power semiconductor device includes a frame, a semiconductor element, a substrate, and a sealing resin. The semiconductor element is disposed on the frame. The substrate is disposed on a side of the frame opposite to a side on which the semiconductor element is disposed. The sealing resin seals the semiconductor element and the substrate. The substrate includes a metal sheet, a first insulating sheet on one main surface side of the metal sheet, and a second insulating sheet on the other main surface side of the metal sheet. The metal sheet has flexibility at a normal temperature.

An object of the present invention is to achieve both securing an insulation distance and securing a chip mounting area in a non-insulated power module. A non-insulated power module includes a plurality of die pads, a plurality of semiconductor chips mounted on upper surfaces of the plurality of die pads, and a package sealing the semiconductor chips, in which lower surfaces of the plurality of die pads are exposed from a lower surface of the package, on the lower surface of the package, first grooves are formed in areas between the plurality of die pads, and the plurality of die pads have a trapezoidal cross-sectional shape in the thickness direction, in which an area of an upper surface is larger than an area of the lower surface.