A display substrate, a preparation method and driving method therefor, and a display apparatus. The display substrate includes a substrate and a switch structure arranged on the substrate, the switch structure being electrically connected to a control signal terminal, a signal input terminal and a signal output terminal. The switch structure comprises a switching unit. The switching unit comprises a first transistor and a second transistor; and the types of the first transistor and the second transistor are opposite. The first transistor comprises: a first active layer, a first gate electrode, a first source electrode, and a first drain electrode. The second transistor comprises: a second active layer, a second gate electrode, a second source electrode, and a second drain electrode.

A clock and voltage generation circuit includes a voltage generator which generates a first gate high voltage, a first gate low voltage, a second gate high voltage, and a second gate low voltage, a first level shifter which generates a first gate clock signal which swings between the first gate high voltage and the first gate low voltage in synchronization with a gate pulse signal, and a second level shifter which generates a second gate clock signal which swings between the second gate high voltage and the second gate low voltage in synchronization with the gate pulse signal. The voltage generator lowers the second gate high voltage to a voltage level of a kickback reference voltage in response to a kickback signal, and the first gate low voltage and the second gate high voltage are gate-on voltages, and the first gate high voltage and the second gate low voltage are gate-off voltages.

A display apparatus includes a display panel displaying an image based on input image data, a driving controller determining a low frequency driving mode and a normal driving mode based on the input image data, a gate driver outputting a gate signal, a data driver outputting a data voltage, and a power voltage generator outputting power voltages. The driving controller is configured to generate a writing frame in which data is written in a pixel of the display panel and a holding frame in which the written data is maintained without writing data in the pixel in the low frequency driving mode. The driving controller is configured to operate at least one of the driving controller, the data driver, and the power voltage generator in a power reducing mode during the holding frame.

A display device includes a polycrystalline semiconductor including a channel and electrodes of a driving transistor; a gate electrode of the driving transistor on the channel of the driving transistor; a first storage electrode on the gate electrode of the driving transistor; a light blocking layer of a first transistor and a light blocking layer of a second transistor; an oxide semiconductor including a channel and electrodes of the first transistor, and a channel and electrodes of the second transistor; a gate electrode of the first transistor on the channel of the first transistor; and a gate electrode of the second transistor on the channel of the second transistor. The light blocking layer of the first transistor and the first storage electrode are on a same layer, and the light blocking layer of the second transistor and the gate electrode of the driving transistor are on a same layer.

A method of manufacturing a vertical metal-semiconductor field-effect transistor (MESFET) device is provided. The method includes forming a first oxide layer, forming a first electrode in the oxide layer, forming a crystallized silicon layer on the first electrode, forming a second electrode on the first oxide layer and on sidewalls of the crystalized silicon layer, forming a second oxide layer on upper surfaces of the second electrode. The method also includes forming a third electrode on an upper surface of the crystallized silicon layer.

A method of fabricating an array substrate is provided. The method includes forming a plurality of first thin film transistors on a base substrate, a respective one of the plurality of first thin film transistors formed to include a first active layer, a first gate electrode, a first source electrode and a first drain electrode; and forming a plurality of second thin film transistors on the base substrate, a respective one of the plurality of second thin film transistors formed to include a second active layer, a second gate electrode, a second source electrode and a second drain electrode. Forming the first source electrode includes forming a first source sub-layer and forming a second source sub-layer in separate patterning steps. Forming the first drain electrode includes forming a first drain sub-layer and forming a second drain sub-layer in separate patterning steps.

A semiconductor memory device and method for making the same. The semiconductor memory device includes an active layer spaced apart from a substrate, extending in a direction parallel to the substrate, and including a channel; a bit line extending in a vertical direction to the substrate and contacting a first end portion of the active layer; a capacitor contacting a second end portion of the active layer; a word line including a high work function electrode adjacent to the bit line and a low work function electrode adjacent to the capacitor; a first gate dielectric layer disposed between the low work function electrode and the active layer; and a second gate dielectric layer disposed between the high work function electrode and the active layer, the second gate dielectric layer being thinner than the first gate dielectric layer.

An array substrate, a manufacturing method thereof, and a display device are provided. The array substrate includes: a base substrate; a first thin film transistor located on the base substrate and including a first active layer; and a second thin film transistor located on the base substrate and including a second active layer; a matrix material of the first active layer is the same as that of the second active layer, and the first active layer and the second active layer satisfy at least one of the following conditions: a carrier mobility of the first active layer is greater than that of the second active layer, and a carrier concentration of the first active layer is greater than that of the second active layer. The array substrate is employed to compensate a difference in threshold voltage caused by a difference in channel width-to-length ratio of different thin film transistors.

A process includes (a) providing a semiconductor substrate having a planar surface; (b) forming a plurality of thin-film layers above the planar surface of the semiconductor substrate, one on top of another, including among the thin-film layers first and second isolation layers, wherein a significantly greater concentration of a first dopant specie is provided in the first isolation layer than in the second isolation layer; (c) etching along a direction substantially orthogonal to the planar surface through the thin-films to create a trench having sidewalls that expose the thin-film layers; (d) depositing conformally a semiconductor material on the sidewalls of the trench; (e) annealing the first isolation layer at a predetermined temperature and a predetermined duration such that the first isolation layer act as a source of the first dopant specie which dopes a portion of the semiconductor material adjacent the first isolation layer; and (f) selectively etching the semiconductor material to remove the doped portion of the semiconductor material without removing the remainder of the semiconductor material.

A carrier substrate to be used, when manufacturing a member for an electronic device on a surface of a substrate, by being bonded to the substrate, includes at least a first glass substrate. The first glass substrate has a compaction described below of 80 ppm or less. Compaction is a shrinkage in a case of subjecting the first glass substrate to a temperature raising from a room temperature at 100° C./hour and to a heat treatment at 600° C. for 80 minutes, and then to a cooling to the room temperature at 100° C./hour.