The present application discloses a pixel structure and a display device. The pixel structure includes a scan line having a branch structure; and a semiconductor pattern intersecting with the scan line and the branch structure. The semiconductor pattern includes: a first channel region disposed below the scan line; a second channel region disposed below the branch structure; and doping regions respectively disposed at two sides of the first channel region and at two sides of the second channel region. Wherein, the width of the second channel region is less than the width of the first channel region. The pixel structure may improve the display performance of the display screen.

An organic light emitting display (OLED) device includes an organic light emitting diode having an anode and a cathode. The organic light emitting diode is configured to receive a reference voltage. A control transistor includes a first control electrode and a first semiconductor active layer. The control transistor is configured to receive a control signal. A driving transistor includes a second control electrode that is electrically connected to the control transistor, an input electrode that is configured to receive a power voltage, an output electrode that is electrically connected to the anode of the organic light emitting diode, and a second semiconductor active layer that includes a different material from that of the first semiconductor active layer. A shielding electrode is disposed on the second semiconductor active layer, overlapping the driving transistor, and configured to receive the power voltage.

A display device including a substrate, a first gate electrode, a second gate electrode, an active layer, and a first data electrode is provided. The active layer is disposed between the first gate electrode and the second gate electrode. And one of the first gate electrode and the second gate electrode is connected to the data line, so as to reduce the off leak current.

A thin-film transistor includes a substrate, a first thin-film structure, a gate structure, and a second thin-film structure that are sequentially disposed on one another. The first thin-film structure includes a channel layer, and first source and drain layers disposed at opposite sides of the channel layer. The gate structure includes a common gate electrode disposed on the channel layer, and a gate insulating layer wrapping the common gate electrode and covering the first thin-film structure. The second thin-film structure includes an active layer disposed on the gate insulating layer and including an indium oxide-based material, and second source and drain layers disposed at opposite sides of the active layer.

The invention provides a GOA circuit for LTPS-TFT, using a resistor (R1) and a tenth TFT (T10) to replace the second capacitor in known technology, and change the diode-style connection of the ninth TFT (T9) in known technology to connect one end of the resistor (R1) to the constant high voltage (VGH) and the other to the gate of the ninth TFT (T9) so that during the output end (G(n)) staying at low, the voltage of the second node (P(n)) follows the (M+1)-th clock signal (CK(M+1)) to switch between high and low, that is, following a fixed frequency to pull down the voltage of the second node (P(n)), prevents the second node from staying at high for long duration and prevents the sixth TFT (T6) and the seventh TFT (T7) from prolonged operation to cause threshold voltage shift and improve GOA circuit stability.

The disclosure relates to a display device, including a first substrate, a light emitting component, an insulating layer, and a conductive element. The first substrate has a driving component and a common line. The light emitting component is disposed on the first substrate and has a first electrode and a second electrode. The first electrode is electrically connected to the driving component. The insulating layer is disposed to the first substrate and has a first opening and a second opening. The first opening exposes the second electrode of the light emitting component. The second opening exposes the common line. The common line is electrically connected to the second electrode through the conductive element.

Provided is a hydrogenation annealing method using a microwave, which performs hydrogenation annealing at a low temperature and with low power in a manufacturing process of a thin film transistor (TFT) for a display device. The hydrogenation annealing method is constituted by a loading step of loading a device requiring hydrogenation annealing into a chamber and an annealing step of irradiating a microwave having a frequency in an industrial scientific medical (ISM) band into the chamber into which the device is loaded. As hydrogenation annealing is performed at a low temperature by using the microwave for an oxide semiconductor TFT or LTPS having very large electron mobility, high integrated energy is transmitted to the device by the microwave, thereby implementing recoupling of hydrogen atoms which have been performed only at a high temperature, even at a low temperature.

A display device is disclosed, which includes: a substrate; a light emitting diode disposed above the substrate; a first transistor disposed above the substrate; and a second transistor disposed above the substrate. The first transistor includes: a first semiconductor layer; a first top gate electrode disposed above the first semiconductor layer; a first bottom gate electrode disposed under the first semiconductor layer; a first source electrode electrically connected to the first semiconductor layer; and a first drain electrode electrically connected to the first semiconductor layer, wherein the first drain electrode is electrically connected to the light emitting diode. In addition, the second transistor includes: a second semiconductor layer. Herein, one of the first semiconductor layer and the second semiconductor layer includes a first silicon semiconductor layer, and the other includes a first oxide semiconductor layer.

A p channel TFT of a driving circuit has a single drain structure and its n channel TFT, an LDD structure. A pixel TFT has the LDD structure. A pixel electrode disposed in a pixel unit is connected to the pixel TFT through a hole bored in at least a protective insulation film formed of an inorganic insulating material and formed above a gate electrode of the pixel TFT, and in an inter-layer insulation film disposed on the insulation film in close contact therewith. These process steps use 6 to 8 photo-masks.

There is provided a flexible display having a plurality of innovations configured to allow bending of a portion or portions to reduce apparent border size and/or utilize the side surface of an assembled flexible display.