Methods, systems, and apparatuses that assist with cooling semiconductor packages, such as multi-chip packages (MCPs) are described. A semiconductor package includes a component on a substrate. The component can include one or more semiconductor dies. The package can also include a multi-reference integrated heat spreader (IHS) solution (also referred to as a smart IHS solution), where the smart IHS solution includes a smart IHS lid. The smart IHS lid includes a cavity formed in a central region of the smart lid. The smart IHS lid can be on the component, such that the cavity corresponds to the component. A first thermal interface material layer (TIM-layer 1) can be on the component. An individual IHS lid (IHS slug) can be on the TIM-layer 1. The IHS slug can be inserted into the cavity. Furthermore, an intermediate thermal interface material layer (TIM-1A layer) can be between the IHS slug and the cavity.

Methods, systems, and apparatuses that assist with cooling semiconductor packages, such as multi-chip packages (MCPs) are described. A semiconductor package includes a component on a substrate. The component can include one or more semiconductor dies. The package can also include a multi-reference integrated heat spreader (IHS) solution (also referred to as a smart IHS solution), where the smart IHS solution includes a smart IHS lid. The smart IHS lid includes a cavity formed in a central region of the smart lid. The smart IHS lid can be on the component, such that the cavity corresponds to the component. A first thermal interface material layer (TIM-layer 1) can be on the component. An individual IHS lid (IHS slug) can be on the TIM-layer 1. The IHS slug can be inserted into the cavity. Furthermore, an intermediate thermal interface material layer (TIM-1A layer) can be between the IHS slug and the cavity.

A lead-free, antimony-free solder alloy_suitable for use in electronic soldering applications. The solder alloy comprises (a) from 1 to 4 wt. % silver; (b) from 0.5 to 6 wt. % bismuth; (c) from 3.55 to 15 wt. % indium, (d) 3 wt. % or less of copper; (e) one or more optional elements and the balance tin, together with any unavoidable impurities.

Methods, systems, and apparatuses that assist with cooling semiconductor packages, such as multi-chip packages (MCPs) are described. A semiconductor package includes a component on a substrate. The component can include one or more semiconductor dies. The package can also include a multi-reference integrated heat spreader (IHS) solution (also referred to as a smart IHS solution), where the smart IHS solution includes a smart IHS lid. The smart IHS lid includes a cavity formed in a central region of the smart lid. The smart IHS lid can be on the component, such that the cavity corresponds to the component. A first thermal interface material layer (TIM-layer 1) can be on the component. An individual IHS lid (IHS slug) can be on the TIM-layer 1. The IHS slug can be inserted into the cavity. Furthermore, an intermediate thermal interface material layer (TIM-1A layer) can be between the IHS slug and the cavity.

Methods, systems, and apparatuses that assist with cooling semiconductor packages, such as multi-chip packages (MCPs) are described. A semiconductor package includes a component on a substrate. The component can include one or more semiconductor dies. The package can also include a multi-reference integrated heat spreader (IHS) solution (also referred to as a smart IHS solution), where the smart IHS solution includes a smart IHS lid. The smart IHS lid includes a cavity formed in a central region of the smart lid. The smart IHS lid can be on the component, such that the cavity corresponds to the component. A first thermal interface material layer (TIM-layer 1) can be on the component. An individual IHS lid (IHS slug) can be on the TIM-layer 1. The IHS slug can be inserted into the cavity. Furthermore, an intermediate thermal interface material layer (TIM-1A layer) can be between the IHS slug and the cavity.

An electronic device includes a semiconductor die having a lower surface, a sintered metallic layer underlying the lower surface of the semiconductor die, a thermally conductive flow layer underlying the sintered metallic layer, and a thermally conductive substrate underlying the thermally conductive flow layer.

An electronic device includes a semiconductor die having a lower surface, a sintered metallic layer underlying the lower surface of the semiconductor die, a thermally conductive flow layer underlying the sintered metallic layer, and a thermally conductive substrate underlying the thermally conductive flow layer.

Technologies are generally described related to three-dimensional integration of integrated circuits (ICs) with spacing for heat dissipation. According to some examples, a self-aligned silicide may be formed in a temporary silicon layer and removed subsequent to bonding of the wafers to achieve improved contact between the combined ICs and enhanced heat dissipation through added spacing between the ICs.

A clip for a semi-conductor device is provided. The clip includes a first portion, and a second portion. The second portion is connected to the first portion. The first portion is formed of a laminate structure that includes a first layer and second layer. A first side of the second layer is secured to a first side of the first layer. The first layer is formed from copper. The second layer is formed from a non-copper material having a coefficient of thermal expansion that is less than a coefficient of thermal expansion of the first layer. The second portion is formed from copper only.

According to one embodiment, a semiconductor package includes a first conductive member, a second conductive member, a plurality of semiconductor devices, a wiring member, a first connection member, and a second connection member. The plurality of semiconductor devices is provided between the first conductive member and the second conductive member. One of the semiconductor devices includes a semiconductor member, a first electrode, a first control electrode, a second control electrode, and a second electrode. The first and second conductive members are electrically connected to the first and second electrodes, respectively. The wiring member includes first, second and third wiring layers, and an insulating region. A part of the insulating region is located between the first wiring layer and the third wiring layer, and between the third wiring layer and the second wiring layer. The second wiring layer includes a first connection region and a second connection region.