An electronic device includes a display panel having first pads, a circuit board that includes second pads corresponding to the first pads, and a conductive adhesive member disposed between the display panel and the circuit board to connect the first pads and the second pads, in which the conductive adhesive member includes a first resin layer adjacent to the display panel, a second resin layer disposed between the first resin layer and the circuit board and having a curing agent different from that of the first resin layer, and conductive particles disposed in the first resin layer wherein at least one of the second pads protrudes through the second resin layer and is in contact with the conductive particles.

A flexible circuit film bonding apparatus includes: a stage configured to support a TFT substrate; a pressing head configured to press and heat a flexible circuit film attached on the TFT substrate with an anisotropic conductive film interposed therebetween; a backup plate configured to support and heat the TFT substrate positioned below the flexible circuit film; and a heating control unit configured to control a temperature of a lower surface of the pressing head and an upper surface of the backup plate, wherein the temperature of the upper surface of the backup plate is less than 170 degrees Celsius.

The application discloses a light-emitting device including a carrier which includes an insulating layer, an upper conductive layer formed on the insulating layer, a plurality of conducting vias passing through the insulating layer, and a lower conductive layer formed under the insulating layer; four light-emitting elements arranged in rows and columns flipped on the carrier; and a light-passing unit formed on the carrier and covering the four light-emitting elements; wherein each of the light-emitting elements including a first light-emitting bare die emitting a first dominant wavelength, a second light-emitting bare die emitting a second dominant wavelength, and a third light-emitting bare die emitting a third dominant wavelength; and wherein two adjacent first light-emitting bare die in a row has a first distance W1, two adjacent first light-emitting bare die in a column has a second distance W2, and W1 is the same as W2.

The present disclosure relates to an electronic chip comprising a semiconductor substrate carrying at least one metal contact extending, within the thickness of the substrate, along at least one flank of the chip.

A semiconductor device has a resistance element including a metal block, a resin layer disposed on the metal block, and a resistance film disposed on the resin layer and an insulated circuit board including an insulating plate and a circuit pattern disposed on the insulating plate and having a bonding area on a front surface thereof to which a back surface of the metal block of the resistance element is bonded. The area of the circuit pattern is larger in plan view than that of a front surface of the resistance element. The metal block has a thickness greater than that of the circuit pattern in a direction orthogonal to the back surface of the metal block. As a result, the metal block properly conducts heat generated by the resistance film of the resistance element to the circuit pattern.

The present disclosure is directed to a hybrid conductive ink including: silver nanoparticles and eutectic low melting point alloy particles, wherein a weight ratio of the eutectic low melting point alloy particles and the silver nanoparticles ranges from 1:20 to 1:5. Also provided herein are methods of forming an interconnect including a) depositing a hybrid conductive ink on a conductive element positioned on a substrate, wherein the hybrid conductive ink comprises silver nanoparticles and eutectic low melting point alloy particles, the eutectic low melting point alloy particles and the silver nanoparticles being in a weight ratio from about 1:20 to about 1:5; b) placing an electronic component onto the hybrid conductive ink; c) heating the substrate, conductive element, hybrid conductive ink and electronic component to a temperature sufficient i) to anneal the silver nanoparticles in the hybrid conductive ink and ii) to melt the low melting point eutectic alloy particles, wherein the melted low melting point eutectic alloy flows to occupy spaces between the annealed silver nanoparticles, d) allowing the melted low melting point eutectic alloy of the hybrid conductive ink to harden and fuse to the electronic component and the conductive element, thereby forming an interconnect. Electrical circuits including conductive traces and, optionally, interconnects formed with the hybrid conductive ink are also provided.

A semiconductor device manufacturing method includes a preparation step and a sinter bonding step. In the preparation step, a sinter-bonding work having a multilayer structure including a substrate, semiconductor chips, and sinter-bonding material layers is prepared. The semiconductor chips are disposed on, and will bond to, one side of the substrate. Each sinter-bonding material layer contains sinterable particles and is disposed between each semiconductor chip and the substrate. In the sinter bonding step, a cushioning sheet having a thickness of 5 to 5000 μm and a tensile elastic modulus of 2 to 150 MPa is placed on the sinter-bonding work, the resulting stack is held between a pair of pressing faces, and, in this state, the sinter-bonding work between the pressing faces undergoes a heating process while being pressurized in its lamination direction, to form a sintered layer from each sinter-bonding material layer.

A chip-on-film package includes a base film having a top surface and a bottom surface, and a circuit region; a source driver chip and a gate driver chip mounted on the circuit region; a first conductive line on the top surface of the base film, a second conductive line on the bottom surface of the base film, and a conductive via that connects the first and second conductive lines to each other; a first row of bonding pads on the circuit region and connected to the source driver chip; a second row of bonding pads on the circuit region and connected to the source driver chip and the gate driver chip; and a test pad outside the circuit region and connected to the first and second conductive lines and the conductive via.

This silver paste is used to form a silver paste layer by applying the silver paste directly on the surface of a copper or copper alloy member, and the silver paste includes a silver powder, a fatty acid silver salt, an aliphatic amine, a high-dielectric-constant alcohol having a dielectric constant of 30 or more, and a solvent having a dielectric constant of less than 30. The content of the high-dielectric-constant alcohol is preferably 0.01% by mass to 5% by mass when an amount of the silver paste is taken as 100% by mass.

Disclosed in the present specification is a micro LED display device, and a manufacturing method therefor, the method forming, in advance, an anisotropic conductive adhesive paste layer only on a conductive electrode part of a semiconductor light emitting element and on a peripheral part thereof, and then transferring the anisotropic conductive adhesive paste layer to a wiring substrate, thereby simultaneously performing a transfer step and a stable wiring step.