A semiconductor laser component including a semiconductor chip arranged to emit laser radiation, a cladding that is electrically insulating and covers the semiconductor chip in places, and a bonding layer that electrically conductively connects the semiconductor chip to a first connection point, wherein the semiconductor chip includes a cover surface, a bottom surface, a first front surface, a second front surface, a first side surface and a second side surface, the first front surface is arranged to decouple the laser beam, the cladding covers the semiconductor chip at least in places on the cover surface, the second front surface, the first side surface and the second side surface, and the bonding layer on the cladding extends from the cover surface to the first connection point.

An apparatus includes an antenna array package cover comprising a radiating surface, a mating surface disposed opposite the radiating surface, and an array of antenna array sub-patterns wherein each antenna array sub-pattern comprises at least one antenna element. The antenna array package also includes an array of sub-pattern interface packages mated to the mating surface of the antenna array package cover. Each sub-pattern interface package of the array of sub-pattern interface packages comprises a package carrier, a sub-pattern integrated circuit electrically and mechanically coupled to the package carrier, and a set of interface lines corresponding to the antenna elements of the antenna array sub-pattern that corresponds to the sub-pattern interface package. Methods for mounting the above apparatus into a host circuit are also disclosed herein.

A semiconductor package includes a base having an upper surface and a lower surface opposite to the upper surface. An antenna array structure is embedded at the upper surface of the base. An IC die is mounted on the lower surface of the base in a flip-chip manner so that a backside of the IC die is available for heat dissipation. Solder ball pads are disposed on the lower surface of the base and arranged around the IC die. The semiconductor package further includes a metal thermal interface layer having a backside metal layer that is in direct contact with the backside of the IC die, and a solder paste conformally printed on the backside metal layer.

A package structure includes a first redistribution circuit structure, a semiconductor die, a connecting film, and a second redistribution circuit structure. The first redistribution circuit structure includes a dielectric structure and a routing structure disposed therein, where the dielectric structure includes a trench exposing the routing structure. The semiconductor die is disposed on and electrically coupled to the first redistribution circuit structure. The connecting film is disposed in the trench and between the semiconductor die and the first redistribution circuit structure, and the semiconductor die is thermally coupled to the routing structure through the connecting film. The second redistribution circuit structure is disposed on and electrically coupled to the semiconductor die, the second redistribution circuit structure is electrically coupled to the first redistribution circuit structure, and the semiconductor die is disposed between the first redistribution circuit structure and the second redistribution circuit structure.

A surface acoustic wave (SAW) filter package structure includes a dielectric substrate having a dielectric layer, a first patterned conductive layer, a second patterned conductive layer, and a conductive connection layer. The conductive connection layer is electrically connected between the first patterned conductive layer and the second patterned conductive layer, which are disposed at opposite sides of the dielectric layer. The second patterned conductive layer has a finger electrode portion. An active surface of a chip is faced toward the finger electrode portion. A polymer sealing frame is disposed between the chip and the dielectric substrate and surrounds the periphery of the chip to form a chamber together with the chip and the dielectric substrate. The mold sealing layer is disposed on the dielectric substrate and covers the chip and the polymer sealing frame. A manufacturing method of the SAW filter package structure is also disclosed.

Some implementations described herein provide a semiconductor structure. The semiconductor structure may include a logic device disposed, at a first side of the logic device, on a carrier wafer of the semiconductor structure. The semiconductor structure may include a dielectric structure disposed on a second side of the logic device, the second side being opposite the first side. The semiconductor structure may include a memory device formed on the dielectric structure.

An integrated device package is disclosed. The integrated device package can include a carrier that has an opening extending at least partially through a thickness of the carrier. The integrated device package can include a microelectronicmechanical systems die that is at least partially disposed in the opening and mechanically and electrically coupled to the carrier. The integrated device package can include a lid that is coupled to the carrier. The lid and the microelectronicmechanical systems die are spaced by a gap defining a back volume.

An integrated device package is disclosed. The integrated device package can include a printed circuit board and a microelectronicmechanical systems die that is at least partially disposed within the printed circuit board and electrically coupled to the printed circuit board. The integrated device package can include a filler material that is at least partially disposed between the microelectronicmechanical systems die and the printed circuit board. The integrated device package can include a lid that is coupled to the printed circuit board. The lid and the microelectronicmechanical systems die are spaced by a gap defining a back volume.

An integrated device package is disclosed. The integrated device package can include a carrier that has a multilayer structure having a first layer and a second layer. The first layer at least partially defines a lower side of the carrier. An electrical resistance of the second layer is greater than an electrical resistance of the first layer. The integrated device package can include a microelectronicmechanical systems die that is mounted on an upper side of the carrier opposite the lower side. The integrated device package can include a lid that is coupled to the carrier. The lid and the microelectronicmechanical systems die are spaced by a gap defining a back volume.

Some implementations described herein provide a semiconductor structure. The semiconductor structure may include a logic device disposed, at a first side of the logic device, on a carrier wafer of the semiconductor structure. The semiconductor structure may include a dielectric structure disposed on a second side of the logic device, the second side being opposite the first side. The semiconductor structure may include a memory device formed on the dielectric structure.