An anisotropic conductive film includes a conductive layer; a first resin insulating layer over a first surface of the conductive layer; and a second resin insulating layer over a second surface of the conductive layer, wherein the conductive layer comprises a plurality of conductive particles and a nano fiber connecting the plurality of conductive particles to each other, each of the plurality of conductive particles comprising a plurality of needle-shaped protrusions having a conical shape, and wherein the first resin insulating layer and the second resin insulating layer comprise a same material and have different thicknesses.

An anisotropic conductive film includes a conductive layer; a first resin insulating layer over a first surface of the conductive layer; and a second resin insulating layer over a second surface of the conductive layer, wherein the conductive layer comprises a plurality of conductive particles and a nano fiber connecting the plurality of conductive particles to each other, each of the plurality of conductive particles comprising a plurality of needle-shaped protrusions having a conical shape, and wherein the first resin insulating layer and the second resin insulating layer comprise a same material and have different thicknesses.

An apparatus having a seal plate which includes rigid hard portions and one or more flexible soft portions located between the hard portions is used for bonding at least one semiconductor device onto a substrate that is supported on a platform. The seal plate is movable between a first position which is spaced from the substrate and a second position whereat a first side of the seal plate is configured to be in contact with the substrate. A diaphragm covers a second side of the seal plate opposite to the first side. A fluid pressure generator exerts a fluid pressure onto the diaphragm to actuate the diaphragm to compress the one or more soft portions to transmit a bonding force onto the at least one semiconductor device during bonding.

A terminal element or bus bar for a power semiconductor module arrangement includes a first end configured to be arranged inside a housing of the power semiconductor module arrangement, a second end configured to be arranged outside of the housing of the power semiconductor module arrangement, and at least a first section and a second section arranged successively between the first end and the second end along a length of the terminal element or bus bar, wherein either the first section includes a first material, the second section includes a second material, and the first material differs from the second material, or the first section has a first thickness, the second section has a second thickness, and the first thickness differs from the second thickness, or both.

A semiconductor device according to the present embodiment includes a circuit board comprising a plurality of electrodes provided on a first surface, a first resin layer provided on the first surface around the electrodes, and a second resin layer provided on the first resin layer. A first semiconductor chip is connected to a first one of the electrodes. A second semiconductor chip is provided above the first semiconductor chip, being larger than the first semiconductor chip, and is connected to a second one of the electrodes via a metal wire. A third resin layer is provided between the first semiconductor chip and the second semiconductor chip and between the second resin layer and the second semiconductor chip, and covers the first semiconductor chip.

The present disclosure provides a method of transferring an electronic element using a stamping and magnetic field alignment technology and an electronic device including an electronic element transferred using the method. In the present disclosure, a polymer may be simultaneously coated on a plurality of electronic elements using the stamping process, and the polymer may be actively coated on the electronic elements without restrictions on process parameters such as size and spacing of the electronic elements. Moreover, the self-aligned ferromagnetic particles have an anisotropic current flow through which current flows only in the aligned direction. Therefore, the current may flow only vertically between the electronic element and the electrode, and there is no electrical short circuit between a peripheral LED element and the electrode.

A power semiconductor module arrangement comprises a substrate comprising a dielectric insulation layer, and a first metallization layer attached to the dielectric insulation layer, at least one semiconductor body mounted on the first metallization layer, and a first layer comprising an encapsulant, the first layer being arranged on the substrate and covering the first metallization layer the at least one semiconductor body, wherein the first layer is configured to release liquid or oil at temperatures exceeding a defined threshold temperature.

A semiconductor package can include a semiconductor chip on a substrate inside the semiconductor package and an electrode pad spaced apart from the semiconductor chip on the substrate inside the semiconductor package. A wire can be inside the semiconductor package, to connect the electrode pad to the semiconductor chip and a barrier member can be on the substrate fencing-in the semiconductor chip, where the electrode pad and the wire can be in an interior portion of the substrate. A sealing material can be in the interior portion of the substrate fenced-in by the barrier member, where the sealing material covering the semiconductor chip, the electrode pad, and the wire.

Implementations of semiconductor packages may include: a semiconductor wafer, a glass lid fixedly coupled to a first side of the semiconductor die by an adhesive, a redistribution layer coupled to a second side of the semiconductor die, and a plurality of ball mounts coupled to the redistribution layer on a side of the redistribution layer coupled to the semiconductor die. The adhesive may be located in a trench around a perimeter of the semiconductor die and located in a corresponding trench around a perimeter of the glass lid.

A method includes forming a first tacking layer on a first connection partner, arranging a first layer on the first tacking layer, forming a second tacking layer on the first layer, arranging a second connection partner on the second tacking layer, heating the tacking layers and first layer, and pressing the first connection partner towards the second connection partner, with the first layer arranged between the connection partners, such that a permanent mechanical connection is formed between the connection partners. Either the tacking layers each include a second material evenly distributed within a first material, the second material being configured to act as or to release a reducing agent, or the tacking layers each include a mixture of at least a third material and a fourth material, the materials in the mixture chemically reacting with each other under the influence of heat such that a reducing agent is formed.