Provided is a display device comprising a light-emitting element, a driving transistor configured to supply a drive current to the light-emitting element based on a voltage of a gate electrode thereof and having a driving channel including a first material, a first transistor connected to one of first and second electrodes of the driving transistor and having a first channel, a light-emission control line connected to a gate electrode of the first transistor, a second transistor connected to the second electrode of the driving transistor and having a second channel including a second material different from the first material, a first scan line connected to a gate electrode of the second transistor, and a shielding layer overlapping the first scan line.

A method for making a thin film transistor device includes forming a semiconductor film on a flexible substrate comprising a thin ribbon of refractory material that does not degrade when heated to temperatures greater than about 750° C. The semiconductor film is crystallized by heating the semiconductor film and the flexible substrate to at least about 750° C. A dielectric material is deposited on the crystallized semiconductor film. Gate, source, and drain electrodes are formed on the dielectric material.

An array substrate includes a substrate, a first metal layer and an active layer disposed on the substrate, an interlayer insulating layer, and a second metal layer. The first metal layer forms at least one first trace, the interlayer insulating layer is disposed on the first metal layer and the active layer, the second metal layer is disposed on the interlayer insulating layer, the interlayer insulating layer is formed with a first contact hole, and the second metal layer is connected to the first trace through the first contact hole. The first metal layer includes a conductive layer and a first protective layer stacked in sequence.

A light emitting display device includes: a light emitting element; a second transistor connected to a scan line; a first transistor which applies a current to the light emitting element; a capacitor connected to a gate electrode of the first transistor; and a third transistor connected to an output electrode of the first transistor and the gate electrode of the first transistor. Channels of the second transistor, the first transistor, and the third transistor are disposed in a polycrystalline semiconductor layer, and a width of a channel of the third transistor is in a range of about 1 .Math.m to about 2 .Math.m, and a length of the channel of the third transistor is in a range of about 1 .Math.m to about 2.5 .Math.m.

An array substrate, a method of manufacturing an array substrate, a display panel, and an electronic device are provided. The array substrate includes a display area and a peripheral area; the display area includes a pixel region, the pixel region includes a first thin film transistor, and the first thin film transistor includes a first active layer; the peripheral area includes a second thin film transistor, and the second thin film transistor includes a second active layer; and the first active layer includes a material of oxide semiconductor, and the second active layer includes a material of poly-silicon semiconductor.

An organic light emitting display device includes a plurality of pixels. Each of the pixels includes an organic light emitting diode, first to third transistors, a storage capacitor, and a first capacitor. The second transistor includes a gate electrode receiving a first scan signal, a first electrode receiving a data signal, and a second electrode connected to a first electrode of the first transistor. The third transistor includes a gate electrode receiving a second scan signal, a first electrode connected to a second electrode of the first transistor, and a second electrode connected to a gate electrode of the first transistor. The storage capacitor includes a first electrode receiving a power voltage and a second electrode connected to the gate electrode of the first transistor. The first capacitor includes a first electrode connected to the gate electrode of the third transistor and a second electrode receiving the power voltage.

A display device may include a light emitting element, a buffer layer, a gate insulation layer, and a switching element. A refractive index of the gate insulation layer may be equal to a refractive index of the buffer layer. The switching element may be electrically connected to the light emitting element and may include an active layer and a gate electrode. The active layer may be positioned between the buffer layer and the gate insulation layer and may directly contact at least one of the buffer layer and the gate insulation layer. The gate insulation layer may be positioned between the active layer and the gate electrode and may directly contact at least one of the active layer and the gate electrode.

A display device includes an array substrate, a second substrate and a black matrix. The array substrate includes a first substrate, at least one electrostatic protecting component and a shielding layer. The first substrate has a display region and a peripheral region located outside the display region. The electrostatic protecting component is disposed on the first substrate in the peripheral region, and the electrostatic protecting component includes a semiconductor layer. The shielding layer includes an insulating material, and the shielding layer is disposed on the first substrate in the peripheral region, wherein the shielding layer overlaps the semiconductor layer. The second substrate is opposite to the first substrate. The black matrix is disposed between the second substrate and the first substrate. The shielding layer is disposed between the black matrix and the first substrate.

The display apparatus includes a substrate, a first active layer disposed on the substrate, a first gate layer disposed on a layer covering the first active layer, the first gate layer including a first gate electrode, a second gate layer disposed on a layer covering the first gate layer, the second gate layer including an initialization line including a first part of a second electrode; a second active layer disposed on a layer covering the second gate layer, the second active layer including a second active region overlapping the first part of the second electrode; a third gate layer disposed on a layer covering the second active layer, the third gate layer including a second part of the second electrode overlapping the second active region; and a first source/drain layer disposed on a layer covering the third gate layer, the first source/drain layer including a first connection line.

This application can provide a display substrate, a display panel and a display device. The display substrate includes a top-gate oxide thin film transistor and a top-gate low temperature poly-silicon thin film transistor located above a base substrate. The top-gate low temperature poly-silicon thin film transistor includes a first active layer and a first gate, stacked above the base substrate. The display substrate further includes a first gate insulating layer, disposed between the first active layer and the first gate; a second gate insulating layer, disposed between the first gate insulating layer and the first gate; and a second gate, disposed between the first gate insulating layer and the second gate insulating layer.