Provided is a display device including: a capacitor having a first electrode, a first insulating film over the first electrode, and a second electrode over the first insulating film; and a first transistor over the capacitor. The first transistor includes the second electrode, a second insulating film over the second electrode, an oxide semiconductor film over the second insulating film, and a first source electrode and a first drain electrode over the oxide semiconductor film. The first source electrode and the first drain electrode are electrically connected to the oxide semiconductor film.

A display apparatus includes a first semiconductor layer disposed on a substrate; a first gate layer disposed on the first semiconductor layer, the first gate layer including a driving gate electrode; a second gate layer disposed on the first gate layer, the second gate layer including a capacitor upper electrode; a first connecting electrode layer disposed on the second gate layer, the first connecting electrode layer including a transfer wiring; a second connecting electrode layer disposed on the first connecting electrode layer, the second connecting electrode layer including a horizontal connection wiring extending in a first direction; and a third connecting electrode layer disposed on the second connecting electrode layer, the third connecting electrode layer including a vertical connection wiring extending in a second direction that intersects the first direction.

An electro-optical device includes: a substrate extending along a first direction and having a recessed portion including a bottom surface and a side surface, a laminated film disposed along the bottom surface and the side surface of the recessed portion, and having a first conductive layer, a dielectric layer, and a second conductive layer, a first insulating film covering the laminated film, a portion of the first insulating film being disposed inside the recessed portion, a light shielding film, a second insulating film, and a semiconductor layer disposed along the first direction. The laminated film is arranged along the bottom surface and the side surface of the recessed portion, the first insulating film is disposed so as to include the recessed portion, and a length of side surface in a depth direction is larger than a length of the bottom surface in a width direction.

According to one embodiment, a semiconductor device includes a semiconductor layer including a source area, a drain area and a channel area, a first insulating layer, an etching stopper layer located immediately above the channel area and being thinner than the first insulating layer, a second insulating layer provided on the etching stopper layer and being thicker than the first insulating layer, a gate electrode, a third insulating layer which covers the etching stopper layer, the second insulating layer and the gate electrode and covers the first insulating layer immediately above the source area and immediately above the drain area, a source electrode in contact with the source area, and a drain electrode in contact with the drain area.

A display device includes: a substrate; a semiconductor layer on the substrate, and including a channel of at least one transistor; a first insulating layer on the semiconductor layer; and a gate electrode on the first insulating layer. The semiconductor layer includes polycrystalline silicon, and the channel includes: a first region containing a first impurity; and a second region containing a second impurity different from the first impurity.

Ferroelectric field effect transistors (FeFETs) having band-engineered interface layers are described. In an example, an integrated circuit structure includes a semiconductor channel layer above a substrate. A metal oxide material is on the semiconductor channel layer, the metal oxide material having no net dipole. A ferroelectric oxide material is on the metal oxide material. A gate electrode is on the ferroelectric oxide material, the gate electrode having a first side and a second side opposite the first side. A first source/drain region is at the first side of the gate electrode, and a second source/drain region is at the second side of the gate electrode.

An organic light emitting display device comprises a substrate including a display area and a non-display area, a driving thin film transistor and at least one switching thin film transistor in the display area, and an organic light device in the display area, wherein the driving thin film transistor and the switching thin film transistor include respectively an oxide semiconductor layer, and wherein a surface treating layer including a pattern of protrusions is on an upper surface of the oxide semiconductor layer of the driving thin film transistor.

A display device is disclosed. The display device includes a display area and a wiring area. The display area is disposed with a first thin film transistor which is an oxide thin film transistor and a second thin film transistor which is a low temperature poly-silicon thin film transistor. A distance between a first active layer of the first thin film transistor and a substrate is different from a distance between a second active layer of the second thin film transistor and the substrate. The first thin film transistor includes first vias that receive a first source/drain. The second thin film transistor includes second vias that receives a second source/drain. The wiring area is provided with a groove. The groove includes a first sub-groove and a second sub-groove that are stacked, and depths of the second vias are substantially equal to a depth of the second sub-groove.

A display panel and a display device are provided. The display panel includes: a pixel circuit including a driving transistor, a first transistor, and a second transistor; a light-emitting element; a first signal line connected to a gate of the first transistor; a second signal line connected to a gate of the second transistor; and a first capacitor. A source or drain of the first transistor is connected to a gate of the driving transistor; and a source or drain of the second transistor is connected to a source or drain of the driving transistor. When being projected on a surface of the display panel, the second signal line is located between the gate of the driving transistor and the first signal line, or the first signal line and the second signal line are located at two sides of the gate of the driving transistor respectively.

A display device including: a substrate including a main area and a sub-area at a side of the main area; a thin-film transistor on the substrate and positioned in the main area; a first insulating layer on a gate electrode of the thin-film transistor; a light-emitting element on the first insulating layer, positioned in the main area, and electrically connected to the thin-film transistor; a plurality of pads on the first insulating layer and positioned in the sub-area; and a light-blocking layer overlapping the plurality of pads and located between the substrate and the first insulating layer.