A display device includes: a substrate; a polycrystalline semiconductor layer which includes a first electrode, a channel, and a second electrode of a driving transistor disposed on the substrate; a first gate insulating layer disposed on the polycrystalline semiconductor layer; a gate electrode of the driving transistor which is disposed on the first gate insulating layer and overlaps the channel; a lower first scan line disposed on the first gate insulating layer; a second gate insulating layer disposed on the gate electrode and on the lower first scan line; a first lower boost electrode disposed on the second gate insulating layer; a first interlayer-insulating layer disposed on the first lower boost electrode; an oxide semiconductor layer disposed on the first interlayer-insulating layer and including a first upper boost electrode overlapping the first lower boost electrode; and a first connection electrode connecting the gate electrode and the first upper boost electrode.

An organic light emitting diode display includes a driving transistor and a compensation transistor. The driving transistor includes a fist gate electrode disposed on a substrate, a polycrystalline semiconductor layer disposed on the first gate electrode of the driving transistor and including a first electrode, a second electrode, and a channel, and a second gate electrode disposed on the polycrystalline semiconductor layer of the driving transistor. The compensation transistor includes a polycrystalline semiconductor layer including a first electrode, a second electrode, and a channel, and a gate electrode disposed on the polycrystalline semiconductor layer of the compensation transistor.

An organic light-emitting display device comprises a first thin-film transistor disposed on a substrate; and a second thin-film transistor disposed on the substrate and spaced apart from the first thin-film transistor. The first thin-film transistor comprises a first semiconductor layer, a first conductive layer disposed on the first semiconductor layer and that overlaps the first semiconductor layer, and a first insulating layer disposed between the first semiconductor layer and the first conductive layer. The second thin-film transistor comprises a second semiconductor layer, and a second conductive layer disposed on the second semiconductor layer and that overlaps the second semiconductor layer. The first semiconductor layer is disposed on a layer higher than the second semiconductor layer, the first semiconductor layer comprises an oxide semiconductor, the second semiconductor layer comprises low temperature polycrystalline silicon (LTPS), and the first insulating layer covers the entire first semiconductor layer.

A display device includes an organic light emitting diode, a first transistor driving the organic light emitting diode, a second transistor transmitting a data signal to the first transistor, a third transistor transmitting a first power voltage to the first transistor, wherein a semiconductor pattern of the first transistor is disposed over a semiconductor pattern of the second transistor, a semiconductor pattern of the third transistor is disposed over the semiconductor pattern of the first transistor, a lower transistor insulating film is disposed between the semiconductor pattern of the first transistor and the semiconductor pattern of the second transistor, and an upper transistor insulating film is disposed between the semiconductor pattern of the first transistor and the semiconductor pattern of the third transistor.

A display device includes: a pixel section provided between a pair of substrates and including plural pixels; one or plural active components disposed in a frame region around the pixel section on one substrate of the pair of substrates; an insulating film provided in the frame region on the one substrate to cover the one or plural active components; and a sealing layer provided to seal the pixel section and cover an end edge portion of the insulating film in the frame region.

It is an object of the present invention to provide a light-emitting device where periphery deterioration can be prevented from occurring even when an organic insulating film is used as an insulating film for the light-emitting device. In addition, it is an object of the present invention to provide a light-emitting device where reliability for a long period of time can be improved. A structure of an inorganic film, an organic film, and an inorganic film is not continuously provided from under a sealing material under a cathode for a light-emitting element. In addition, penetration of water is suppressed by defining the shape of the inorganic film that is formed over the organic film even when a structure of an inorganic film, an organic film, and an inorganic film is continuously provided under a cathode for a light-emitting element.

There is provided a display device including: a light emitting element; and a drive transistor (DRTr) that includes a coupling section (W1) and a plurality of channel sections (CH) coupled in series through the coupling section (W1), wherein the drive transistor (DRTr) is configured to supply a drive current to the light emitting element.

The purpose of the present invention is to improve reliability of the TFT of the oxide semiconductor. The feature of the invention is: A display device comprising: a substrate including a display area where plural pixels are formed, the pixel includes a first TFT of a first oxide semiconductor, a first gate insulating film is formed under the first oxide semiconductor, a first gate electrode is formed under the first gate insulating film, an interlayer insulating film is formed on the first oxide semiconductor; a drain wiring, which connects with the first oxide semiconductor, and a source wiring, which connects with the first oxide semiconductor, are formed on the interlayer insulating film; the drain wiring or the source wiring is a laminated structure of a second oxide semiconductor and a first metal, the second oxide semiconductor is under the first metal.

A pixel may include a light-emitting element, a first transistor including first and second gate electrodes, a second transistor which is connected between a data line and the second gate electrode, and turned on in response to a third scan signal, a third transistor which is connected between first and second nodes, and turned on in response to a second scan signal, a fourth transistor which is connected between the first node and a third power line, and turned on in response to a first scan signal, a fifth transistor which is connected between the first power line and the first transistor, and turned off in response to a first emission control signal, a sixth transistor which is turned off in response to a second emission control signal, and a first capacitor connected between the first power line and the first node.

A thin film transistor is provided. The thin film transistor is disposed on a base substrate and includes: a first active layer; a first gate disposed on a side of the first active layer; a first insulating layer disposed on a side of the first gate away from the base substrate; and a source and a drain. The first gate includes a stacked structure including: a first conductive layer; and a first barrier layer disposed on a side of the first conductive layer away from the base substrate, where a side of the first barrier layer away from the base substrate is in direct contact with a side of the first insulating layer proximate to the base substrate. The first barrier layer includes TiNx1, where 0≤x1<0.2, and x1 is a molar ratio of N to Ti.