Provided are a display panel and an electronic apparatus including the display panel. The display panel includes a substrate including a polymer resin; first and second pixel circuits each including a thin-film transistor, a first light-emitting diode connected to the first pixel circuit and located in a first display area; a second light-emitting diode connected to the second pixel circuit and located in a sub-display area of a second display area, a bottom metal layer in the second display area and between the substrate and the second pixel circuit; and a protective layer between the substrate and the bottom metal layer and corresponding to the first and second display areas, wherein the bottom metal layer includes a first opening in a transmissive area, and the protective layer includes a second opening in the transmissive area and overlapping the first opening of the bottom metal layer.

Some embodiments include an integrated assembly having a polycrystalline first semiconductor material, and having a second semiconductor material directly adjacent to the polycrystalline first semiconductor material. The second semiconductor material is of a different composition than the polycrystalline first semiconductor material. A conductivity-enhancing dopant is within the second semiconductor material. The conductivity-enhancing dopant is a neutral-type dopant relative to the polycrystalline first semiconductor material. An electrical gate is adjacent to a region of the polycrystalline first semiconductor material and is configured to induce an electric field within said region of the polycrystalline first semiconductor material. The gate is not adjacent to the second semiconductor material.

The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first. TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.

Method for producing a semiconductor device, including: producing, on a first region of a surface layer comprising a first semiconductor and disposed on a buried dielectric layer, a layer of a second compressive strained semiconductor along a first direction; etching a trench through the layer of the second semiconductor forming an edge of a portion of the layer of the second semiconductor oriented perpendicularly to the first direction, and wherein the bottom wall is formed by the surface layer; thermal oxidation forming in the surface layer a semiconductor compressive strained portion along the first direction and forming in the trench an oxide portion; producing, through the surface layer and/or the oxide portion, and through the buried dielectric layer, dielectric isolation portions around an assembly formed of the compressive strained semiconductor portion and the oxide portion; and wherein the first semiconductor is silicon, the second semiconductor is SiGe, and said at least one compressive strained semiconductor portion includes SiGe.

A semiconductor device includes an insulating substrate, a first semiconductor region configured of polysilicon formed on the insulating substrate, an insulating film laminated on the first semiconductor region, a contact hole formed in the insulating film and reaching the first semiconductor region, a second semiconductor region configured of an oxide semiconductor formed on the insulating film, a contact electrode configured of a conductive material and electrically connected to the first semiconductor region, where the conductive material is embedded in the contact hole. The insulating film contains a metallic element at an interface with the contact hole, where the metallic element forms the oxide semiconductor.

Provided are an inverter circuit structure, a gate driving circuit and a display panel. The inverter circuit structure includes a PMOS transistor and an NMOS transistor, and further includes a first active layer, a gate layer, a second active layer, a first insulating layer between the gate layer and the first active layer, and a second insulating layer between the gate layer and the second active layer. An orthographic projection of the gate on the first active layer is a first region, and a portion of the first active layer in the first region has substantially a same thickness. An orthographic projection of the gate on the second active layer is a second region, and a portion of the second active layer in the second region has substantially a same thickness.

An organic light emitting display device includes a plurality of pixels. Each of the pixels includes an organic light emitting diode, first to third transistors, a storage capacitor, and a first capacitor. The second transistor includes a gate electrode receiving a first scan signal, a first electrode receiving a data signal, and a second electrode connected to a first electrode of the first transistor. The third transistor includes a gate electrode receiving a second scan signal, a first electrode connected to a second electrode of the first transistor, and a second electrode connected to a gate electrode of the first transistor. The storage capacitor includes a first electrode receiving a power voltage and a second electrode connected to the gate electrode of the first transistor. The first capacitor includes a first electrode connected to the gate electrode of the third transistor and a second electrode receiving the power voltage.

An electronic device is provided. The electronic device includes a display including a plurality of thin film transistors (TFTs), a proximity sensor disposed under the display and including a plurality of light emitting units, and at least one processor operatively coupled to the display and the proximity sensor. The light generated from the proximity sensor may have a lower energy than the work function of silicon included in the plurality of TFTs of the display.

Provided are an array substrate and a fabrication method therefor, a shift register unit, and a display panel. The array substrate includes a first transistor having a double gate structure, and further includes an active layer arranged on one side of the base substrate and a first conductive layer. The active layer includes a first conductor portion connected between a first semiconductor portion and a second semiconductor portion, the first semiconductor portion and a second semiconductor portion forming a channel region of the first transistor. The first conductive layer includes a first conductive portion connected to a stable voltage source, an orthographic projection of the first conductive portion on the base substrate at least partially overlaps with an orthographic projection of the first conductor portion on the base substrate, and the first conducting portion and the first conductor portion form two electrodes of a parallel-plate capacitor.

The present disclosure provides a thin-film transistor and a method for manufacturing the same, an array substrate, and a display device. The thin film transistor of the present disclosure include a plurality of insulating layers, among which at least one insulating layer on the low temperature polysilicon layer comprises organic material, so vias could be formed in the organic material by an exposing and developing process, thereby effectively avoiding the over-etching problem of the low temperature polycrystalline silicon layer caused by dry etching process. By adopting the method for manufacturing the film transistors of the present disclosure, the contact area and uniformity of the drain electrode and the low temperature polysilicon material layer can be increased; the conductivity can be improved; and the production cycle of products can be greatly reduced and thereby improving the equipment capacity.