A display device includes: a substrate; an inorganic insulating layer arranged on the substrate; a plurality of display elements arranged on the organic insulating layer and including a plurality of first display elements and a plurality of second display elements; a lower line arranged between the substrate and the organic insulating layer, and electrically connecting one of the plurality of first display elements and another one of the plurality of first display elements to each other; and an upper line arranged on the organic insulating layer, and electrically connecting one of the plurality of second display elements and the other one of the plurality of second display elements to each other.

A display device includes a polycrystalline semiconductor including a channel and electrodes of a driving transistor; a gate electrode of the driving transistor on the channel of the driving transistor; a first storage electrode on the gate electrode of the driving transistor; a light blocking layer of a first transistor and a light blocking layer of a second transistor; an oxide semiconductor including a channel and electrodes of the first transistor, and a channel and electrodes of the second transistor; a gate electrode of the first transistor on the channel of the first transistor; and a gate electrode of the second transistor on the channel of the second transistor. The light blocking layer of the first transistor and the first storage electrode are on a same layer, and the light blocking layer of the second transistor and the gate electrode of the driving transistor are on a same layer.

A transistor substrate includes a substrate, a semiconductor layer overlapping the substrate, and a gate electrode overlapping the semiconductor layer. The semiconductor layer includes a channel unit, a conductive unit directly connected to an end of the channel unit, and an edge unit positioned at an edge of the conductive unit. A carbon concentration of the edge unit is higher than each of a carbon concentration of the channel unit and a carbon concentration of the conductive unit.

A display apparatus includes a substrate, a gate electrode overlapping the substrate, and a semiconductor layer positioned between the substrate and the gate electrode. The semiconductor layer includes a first layer and a second layer positioned between the first layer and the gate electrode. A hydrogen content of the first layer is greater than a hydrogen content of the second layer.

A display device according to the disclosure includes a substrate, a first transistor provided on the substrate, and a second transistor provided on the substrate, not overlapping the first transistor. The first transistor includes a polycrystalline silicon layer provided on the substrate, a first insulating film provided on the polycrystalline silicon layer, a first gate electrode provided on the first insulating film, and a second insulating film provided on the first gate electrode. The second transistor includes an oxide semiconductor layer provided on the first insulating film, a third insulating film provided on the oxide semiconductor layer, and a second gate electrode provided on the third insulating film. The first and third insulating films are SiOx films. The second insulating film is an SiNx film including hydrogen, and is provided overlapping the polycrystalline silicon layer, and is provided not overlapping the oxide semiconductor layer.

Embodiments of the present disclosure generally relate to a layer stack including a high K dielectric layer formed over a first dielectric layer and a metal electrode. The high K dielectric layer has a K value of 20 or higher and may be formed as a part of a capacitor, a gate insulating layer, or any suitable insulating layer in electronic devices, such as display devices. The layer stack includes a second dielectric layer disposed on the first dielectric layer and the metal layer, and the high K dielectric layer containing zirconium dioxide or hafnium dioxide disposed on the second dielectric layer. The second dielectric layer provides a homogenous surface on which the high K dielectric layer is formed. The homogeneous surface enables the high K dielectric material to be deposited uniformly thereover, resulting in a uniform thickness profile.

A display apparatus has a display region, and the display region includes a texture recognition region. The display apparatus includes: a display panel, a light-shielding layer disposed on a side of the display panel opposite to a light-exit side of the display panel, and a texture recognition structure disposed on a side of the light-shielding layer facing away from the display panel. The light-shielding layer includes a plurality of first through holes. The texture recognition structure is located in the texture recognition region. The texture recognition structure includes a plurality of texture recognition devices arranged in one-to-one correspondence with the plurality of first through holes.

An organic light-emitting display device comprises a first thin-film transistor disposed on a substrate; and a second thin-film transistor disposed on the substrate and spaced apart from the first thin-film transistor. The first thin-film transistor comprises a first semiconductor layer, a first conductive layer disposed on the first semiconductor layer and that overlaps the first semiconductor layer, and a first insulating layer disposed between the first semiconductor layer and the first conductive layer. The second thin-film transistor comprises a second semiconductor layer, and a second conductive layer disposed on the second semiconductor layer and that overlaps the second semiconductor layer. The first semiconductor layer is disposed on a layer higher than the second semiconductor layer, the first semiconductor layer comprises an oxide semiconductor, the second semiconductor layer comprises low temperature polycrystalline silicon (LTPS), and the first insulating layer covers the entire first semiconductor layer.

A display device includes a substrate including a pixel area and a transmission area, and a pixel circuit disposed in the pixel area. The pixel circuit includes a first thin-film transistor included in a first multi-layer film, and a second thin-film transistor included in a second multi-layer film on the first multi-layer film. The first thin-film transistor and the second thin-film transistor are electrically connected to each other. The display device also includes a display element disposed on the second multi-layer film and including a pixel electrode electrically connected to the second thin-film transistor via a contact hole defined in the second multi-layer film, an opposite electrode facing the pixel electrode, and an intermediate layer between the pixel electrode and the opposite electrode.

A liquid crystal apparatus includes a scan line extending in a ±X direction, a data line extending in a ±Y direction that intersects with the ±X direction, a TFT having a semiconductor layer in which, at a position overlapping with the scan line in plan view, one source drain region and a channel region extend along the ±X direction, and at a position overlapping with the data line in plan view, another source drain region extends along the ±Y direction, and a first upper capacitance element and a second upper capacitance element provided at a position overlapping with the data line, so as to overlap with the other source drain region in plan view.