A composite assembly of three stacked joining partners, and a corresponding method. The three stacked joining partners are materially bonded to one another by an upper solder layer and a lower solder layer. An upper joining partner and a lower joining partner are fixed in their height and have a specified distance from one another. The upper solder layer is fashioned from a first solder agent, having a first melt temperature, between the upper joining partner and a middle joining partner. The second solder layer is fashioned from a second solder agent, having a higher, second melt temperature, between the middle joining partner and the lower joining partner. The upper joining partner has an upwardly open solder compensating opening filled with the first solder agent, from which, to fill the gap between the upper joining partner and the middle joining partner, the first solder agent subsequently flows into the gap.

A composite assembly of three stacked joining partners, and a corresponding method. The three stacked joining partners are materially bonded to one another by an upper solder layer and a lower solder layer. An upper joining partner and a lower joining partner are fixed in their height and have a specified distance from one another. The upper solder layer is fashioned from a first solder agent, having a first melt temperature, between the upper joining partner and a middle joining partner. The second solder layer is fashioned from a second solder agent, having a higher, second melt temperature, between the middle joining partner and the lower joining partner. The upper joining partner has an upwardly open solder compensating opening filled with the first solder agent, from which, to fill the gap between the upper joining partner and the middle joining partner, the first solder agent subsequently flows into the gap.

A method of forming a semiconductor package is provided. The method includes forming a metallization stack over a semiconductor die. Polymer particles are mounted over the metallization stack. Each of the polymer particles is coated with a first bonding layer. A heat spreader lid is bonded with the semiconductor die by reflowing the first bonding layer. A composite thermal interface material (TIM) structure is formed between the heat spreader lid and the semiconductor die during the bonding. The composite TIM structure includes the first bonding layer and the polymer particles embedded in the first bonding layer.

A method of forming a semiconductor package is provided. The method includes forming a metallization stack over a semiconductor die. Polymer particles are mounted over the metallization stack. Each of the polymer particles is coated with a first bonding layer. A heat spreader lid is bonded with the semiconductor die by reflowing the first bonding layer. A composite thermal interface material (TIM) structure is formed between the heat spreader lid and the semiconductor die during the bonding. The composite TIM structure includes the first bonding layer and the polymer particles embedded in the first bonding layer.

A semiconductor device such as a chip-scale package is provided. Aspects of the present disclosure further relate to a method for manufacturing such a device. According to an aspect of the present disclosure, a semiconductor device is provided that includes a conformal coating arranged on its sidewalls and on the perimeter part of the semiconductor die of the semiconductor device. To prevent the conformal coating from covering unwanted areas, such as electrical terminals, a sacrificial layer is arranged prior to arranging the conformal coating. By removing the sacrificial layer, the conformal coating can be removed locally. The conformal coating covers the perimeter part of the semiconductor die by the semiconductor device, in which part a remainder of a sawing line or dicing street is provided.

A semiconductor device such as a chip-scale package is provided. Aspects of the present disclosure further relate to a method for manufacturing such a device. According to an aspect of the present disclosure, a semiconductor device is provided that includes a conformal coating arranged on its sidewalls and on the perimeter part of the semiconductor die of the semiconductor device. To prevent the conformal coating from covering unwanted areas, such as electrical terminals, a sacrificial layer is arranged prior to arranging the conformal coating. By removing the sacrificial layer, the conformal coating can be removed locally. The conformal coating covers the perimeter part of the semiconductor die by the semiconductor device, in which part a remainder of a sawing line or dicing street is provided.

An electronic device is provided, the electronic device includes a driving substrate, the driving substrate includes a plurality of first grooves and a plurality of second grooves, the first grooves and the second grooves have different sizes, at least one first electronic component of the plurality of first electronic components is disposed in one of the plurality of first grooves, at least one second electronic component of the plurality of second electronic components is disposed in one of the plurality of second grooves, a maximum length passing through a center of a bottom surface of the at least one first electronic component is defined as L1, a bottom length of one side of at least one second groove among the second grooves is defined as L2, and the at least one first electronic component and the at least one second groove satisfy the condition of L1>L2.

An electronic device is provided, the electronic device includes a driving substrate, the driving substrate includes a plurality of first grooves and a plurality of second grooves, the first grooves and the second grooves have different sizes, at least one first electronic component of the plurality of first electronic components is disposed in one of the plurality of first grooves, at least one second electronic component of the plurality of second electronic components is disposed in one of the plurality of second grooves, a maximum length passing through a center of a bottom surface of the at least one first electronic component is defined as L1, a bottom length of one side of at least one second groove among the second grooves is defined as L2, and the at least one first electronic component and the at least one second groove satisfy the condition of L1>L2.

A method for manufacturing a semiconductor package structure is provided. The method includes: (a) providing a semiconductor structure including a first device and a second device; (b) irradiating the first device by a first energy-beam with a first irradiation area; and (c) irradiating the first device and the second device by a second energy-beam with a second irradiation area greater than the first irradiation area of the first energy-beam.

A method for manufacturing a semiconductor package structure is provided. The method includes: (a) providing a semiconductor structure including a first device and a second device; (b) irradiating the first device by a first energy-beam with a first irradiation area; and (c) irradiating the first device and the second device by a second energy-beam with a second irradiation area greater than the first irradiation area of the first energy-beam.