A semiconductor device includes an insulating layer, a barrier electrode layer formed on the insulating layer, a Cu electrode layer that includes a metal composed mainly of copper and that is formed on a principal surface of the barrier electrode layer, and an outer-surface insulating film that includes copper oxide, that coats an outer surface of the Cu electrode layer, and that is in contact with the principal surface of the barrier electrode layer.

A semiconductor device includes an insulating layer, a barrier electrode layer formed on the insulating layer, a Cu electrode layer that includes a metal composed mainly of copper and that is formed on a principal surface of the barrier electrode layer, and an outer-surface insulating film that includes copper oxide, that coats an outer surface of the Cu electrode layer, and that is in contact with the principal surface of the barrier electrode layer.

A display device includes a substrate including a conductive pad, a driving chip facing the substrate and including a conductive bump electrically connected to the conductive pad and an inspection bump which is insulated from the conductive pad, and an adhesive member which is between the conductive pad and the driving chip and connects the conductive pad to the driving chip. The adhesive member includes a first adhesive layer including a conductive ball; and a second adhesive layer facing the first adhesive layer, the second adhesive layer including a first area including a color-changing material, and a second area adjacent to the first area and excluding the color-changing material.

A display device includes a substrate including a conductive pad, a driving chip facing the substrate and including a conductive bump electrically connected to the conductive pad and an inspection bump which is insulated from the conductive pad, and an adhesive member which is between the conductive pad and the driving chip and connects the conductive pad to the driving chip. The adhesive member includes a first adhesive layer including a conductive ball; and a second adhesive layer facing the first adhesive layer, the second adhesive layer including a first area including a color-changing material, and a second area adjacent to the first area and excluding the color-changing material.

A display module includes a first substrate; a plurality of micro-pixel packages provided on an upper surface of the first substrate and including a plurality of pixels arranged in two dimensions; a plurality of micro-pixel controllers provided on the upper surface of the first substrate and configured to control the plurality of micro-pixel packages; and a driver integrated chip (IC) configured to transmit a driving signal to the plurality of micro-pixel controllers, wherein upper ends of the plurality of micro-pixel packages are positioned higher than upper ends of the plurality of micro-pixel controllers with respect to the upper surface of the first substrate.

A display module includes a first substrate; a plurality of micro-pixel packages provided on an upper surface of the first substrate and including a plurality of pixels arranged in two dimensions; a plurality of micro-pixel controllers provided on the upper surface of the first substrate and configured to control the plurality of micro-pixel packages; and a driver integrated chip (IC) configured to transmit a driving signal to the plurality of micro-pixel controllers, wherein upper ends of the plurality of micro-pixel packages are positioned higher than upper ends of the plurality of micro-pixel controllers with respect to the upper surface of the first substrate.

This disclosure relates to a cascode HEMT semiconductor device including a lead frame, a die pad attached to the lead frame, and a HEMT die attached to the die pad. The HEMT die includes a HEMT source and a HEMT drain on a first side, and a HEMT gate on a second side. The device further includes a MOSFET die attached to the source of the HEMT die, and the MOSFET die includes a MOSFET source, a MOSFET gate and a MOSFET drain. The MOSFET drain is connected to the HEMT source, and the MOSFET source includes a MOSFET source clip. The MOSFET source clip includes a pillar so to connect the MOSFET source to the HEMT gate, and the connection between the MOSFET source to the HEMT gate is established by a conductive material.

This disclosure relates to a cascode HEMT semiconductor device including a lead frame, a die pad attached to the lead frame, and a HEMT die attached to the die pad. The HEMT die includes a HEMT source and a HEMT drain on a first side, and a HEMT gate on a second side. The device further includes a MOSFET die attached to the source of the HEMT die, and the MOSFET die includes a MOSFET source, a MOSFET gate and a MOSFET drain. The MOSFET drain is connected to the HEMT source, and the MOSFET source includes a MOSFET source clip. The MOSFET source clip includes a pillar so to connect the MOSFET source to the HEMT gate, and the connection between the MOSFET source to the HEMT gate is established by a conductive material.

A microelectronic device has a first die attached to a first die pad, and a second die attached to a second die pad. A magnetically permeable member is attached to a first coupler pad and a second coupler pad. A coupler component is attached to the magnetically permeable member. The first die pad, the second die pad, the first coupler pad, the second coupler pad, and the magnetically permeable member are electrically conductive. The first coupler pad is electrically isolated from the first die, from the second coupler pad, and from external leads of the microelectronic device. The second coupler pad is electrically isolated from the first die and from the external leads. The first die and the second die are electrically coupled to the coupler component. A package structure contains at least portions of the components of the microelectronic device and extends to the external leads.

A microelectronic device has a first die attached to a first die pad, and a second die attached to a second die pad. A magnetically permeable member is attached to a first coupler pad and a second coupler pad. A coupler component is attached to the magnetically permeable member. The first die pad, the second die pad, the first coupler pad, the second coupler pad, and the magnetically permeable member are electrically conductive. The first coupler pad is electrically isolated from the first die, from the second coupler pad, and from external leads of the microelectronic device. The second coupler pad is electrically isolated from the first die and from the external leads. The first die and the second die are electrically coupled to the coupler component. A package structure contains at least portions of the components of the microelectronic device and extends to the external leads.