A semiconductor device includes a vapor chamber lid for high power applications such as chip-on-wafer-on-substrate (CoWoS) applications using high performance processors (e.g., graphics processing unit (GPU)) and methods of manufacturing the same. The vapor chamber lid provides a thermal solution which enhances the thermal performance of a package with multiple chips. The vapor chamber lid improves hot spot dissipation in high performance chips, for example, at the three-dimensional (3D-IC) packaging level.

A semiconductor device includes a plurality of semiconductor chips sequentially stacked on a substrate, an underfill layer between the plurality of semiconductor chips and between the substrate and a lowermost one of the plurality of semiconductor chips, and a molding resin extending around the plurality of semiconductor chips. The molding resin extends to a space between an uppermost one of the plurality of semiconductor chips and a semiconductor chip sequentially beneath the uppermost one of the plurality of semiconductor chips.

The present disclosure relates to a thermally enhanced package, which includes a carrier, a thinned die over the carrier, a mold compound, and a heat extractor. The thinned die includes a device layer over the carrier and a dielectric layer over the device layer. The mold compound resides over the carrier, surrounds the thinned die, and extends beyond a top surface of the thinned die to define an opening within the mold compound and over the thinned die. The top surface of the thinned die is at a bottom of the opening. At least a portion of the heat extractor is inserted into the opening and in thermal contact with the thinned die. Herein the heat extractor is formed of a metal or an alloy.

The present disclosure relates to a thermally enhanced package, which includes a carrier, a thinned die over the carrier, a mold compound, and a heat extractor. The thinned die includes a device layer over the carrier and a dielectric layer over the device layer. The mold compound resides over the carrier, surrounds the thinned die, and extends beyond a top surface of the thinned die to define an opening within the mold compound and over the thinned die. The top surface of the thinned die is at a bottom of the opening. At least a portion of the heat extractor is inserted into the opening and in thermal contact with the thinned die. Herein the heat extractor is formed of a metal or an alloy.

A semiconductor package includes a first semiconductor chip on a lower structure. A first underfill is between the first semiconductor chip and the lower structure. The first underfill includes a first portion adjacent to a center region of the first semiconductor chip, and a second portion adjacent to an edge region of the first semiconductor chip. The second portion has a higher degree of cure than the first portion. A plurality of inner connection terminals is between the first semiconductor chip and the lower structure. The plurality of inner connection terminals extends in the first underfill.

An LED assembly includes an omnidirectional light field. The LED assembly has a transparent substrate with first and second surfaces facing to opposite orientations respectively. LED chips are mounted on the first surface and are electrically interconnected by a circuit. A transparent capsule with a phosphor dispersed therein is formed on the first surface and substantially encloses the circuit and the LED chips. First and second electrode plates are formed on the first or second surface, and electrically connected to the LED chips.

A light-emitting device includes a carrier, a light-emitting element and a connection structure. The carrier includes a first electrical conduction portion. The light-emitting element includes a first light-emitting layer capable of emitting first light and a first contact electrode formed under the light-emitting layer. The first contact electrode is corresponded to the first electrical conduction portion. The connection structure includes a first electrical connection portion and a protective portion surrounding the first contact electrode and the first electrical connection portion. The first electrical connection portion includes an upper portion, a lower portion and a neck portion arranged between the upper portion and the lower portion. An edge of the upper portion is protruded beyond the neck portion, and an edge of the lower portion is protruded beyond the upper portion.

A light-emitting device includes a carrier, a light-emitting element and a connection structure. The carrier includes a first electrical conduction portion. The light-emitting element includes a first light-emitting layer capable of emitting first light and a first contact electrode formed under the light-emitting layer. The first contact electrode is corresponded to the first electrical conduction portion. The connection structure includes a first electrical connection portion and a protective portion surrounding the first contact electrode and the first electrical connection portion. The first electrical connection portion includes an upper portion, a lower portion and a neck portion arranged between the upper portion and the lower portion. An edge of the upper portion is protruded beyond the neck portion, and an edge of the lower portion is protruded beyond the upper portion.

A package structure is provided. The package structure includes a redistribution structure and a semiconductor chip over the redistribution structure. The package structure also includes an adhesive element over the semiconductor chip. Opposite outermost edges of the adhesive element are laterally between opposite outermost edges of the redistribution structure. The package structure further includes a protective layer laterally surrounding the semiconductor chip and the adhesive element. In addition, the package structure includes a thermal conductive element over the semiconductor chip. The thermal conductive element is surrounded by the adhesive element.

A package structure is provided. The package structure includes a redistribution structure and a semiconductor chip over the redistribution structure. The package structure also includes an adhesive element over the semiconductor chip. Opposite outermost edges of the adhesive element are laterally between opposite outermost edges of the redistribution structure. The package structure further includes a protective layer laterally surrounding the semiconductor chip and the adhesive element. In addition, the package structure includes a thermal conductive element over the semiconductor chip. The thermal conductive element is surrounded by the adhesive element.