Die-substrate assemblies having sinter-bonded backside via structures, and methods for fabricating such die-substrate assemblies, are disclosed. In embodiments, the method includes obtaining an integrated circuit (IC) die having a backside over which a backmetal layer is formed and into which a plated backside via extends. The IC die is attached to an electrically-conductive substrate by: (i) applying sinter precursor material over the backmetal layer and into the plated backside via; (ii) positioning a frontside of the electrically-conductive substrate adjacent the plated backmetal layer and in contact with the sinter precursor material; and (iii) sintering the sinter precursor material to yield a sintered bond layer attaching and electrically coupling the IC die to the frontside of the electrically-conductive substrate through the backmetal layer and through the plated backside via. The sintered bond layer contacts and is metallurgically bonded to the backside via lining.

Die-substrate assemblies having sinter-bonded backside via structures, and methods for fabricating such die-substrate assemblies, are disclosed. In embodiments, the method includes obtaining an integrated circuit (IC) die having a backside over which a backmetal layer is formed and into which a plated backside via extends. The IC die is attached to an electrically-conductive substrate by: (i) applying sinter precursor material over the backmetal layer and into the plated backside via; (ii) positioning a frontside of the electrically-conductive substrate adjacent the plated backmetal layer and in contact with the sinter precursor material; and (iii) sintering the sinter precursor material to yield a sintered bond layer attaching and electrically coupling the IC die to the frontside of the electrically-conductive substrate through the backmetal layer and through the plated backside via. The sintered bond layer contacts and is metallurgically bonded to the backside via lining.

The present invention aims to provide resin particles that have excellent heat resistance and that, when used as base particles of conductive particles, are applicable to mounting by thermocompression bonding at low pressure to produce a connection structure having excellent connection reliability. The present invention also aims to provide conductive particles, a conductive material, and a connection structure each including the resin particles. Provided are resin particles having a 5% weight loss temperature of 350° C. or higher, a 10% K value at 25° C. of 100 N/mm.sup.2 or more and 2,500 N/mm.sup.2 or less, and a 30% K value at 25° C. of 100 N/mm.sup.2 or more and 1,500 N/mm.sup.2 or less.

A power electronics module includes a glass layer with one or more vias extending through the glass layer and having an electrically and thermally conductive material disposed within the one or more vias, a power electronic device directly bonded to a first surface of the glass layer, and, a cooling structure thermally coupled to a second surface of the glass layer.

A power electronics module includes a glass layer with one or more vias extending through the glass layer and having an electrically and thermally conductive material disposed within the one or more vias, a power electronic device directly bonded to a first surface of the glass layer, and, a cooling structure thermally coupled to a second surface of the glass layer.

An anisotropic conductive film includes a conductive layer; a first resin insulating layer over a first surface of the conductive layer; and a second resin insulating layer over a second surface of the conductive layer, wherein the conductive layer comprises a plurality of conductive particles and a nano fiber connecting the plurality of conductive particles to each other, each of the plurality of conductive particles comprising a plurality of needle-shaped protrusions having a conical shape, and wherein the first resin insulating layer and the second resin insulating layer comprise a same material and have different thicknesses.

An anisotropic conductive film includes a conductive layer; a first resin insulating layer over a first surface of the conductive layer; and a second resin insulating layer over a second surface of the conductive layer, wherein the conductive layer comprises a plurality of conductive particles and a nano fiber connecting the plurality of conductive particles to each other, each of the plurality of conductive particles comprising a plurality of needle-shaped protrusions having a conical shape, and wherein the first resin insulating layer and the second resin insulating layer comprise a same material and have different thicknesses.

A semiconductor adhesive used for sealing connection portions of a semiconductor device, wherein: in the semiconductor device, the connection portion of a semiconductor chip and the connection portion of a wiring circuit substrate are electrically connected to each other or the connection portions of a plurality of semiconductor chips are electrically connected to each other; the semiconductor adhesive comprises a (meth)acrylic compound and a curing agent; and when the semiconductor adhesive is kept at 200° C. for 5 seconds, a curing reaction rate thereof is 80% or more.

A semiconductor adhesive used for sealing connection portions of a semiconductor device, wherein: in the semiconductor device, the connection portion of a semiconductor chip and the connection portion of a wiring circuit substrate are electrically connected to each other or the connection portions of a plurality of semiconductor chips are electrically connected to each other; the semiconductor adhesive comprises a (meth)acrylic compound and a curing agent; and when the semiconductor adhesive is kept at 200° C. for 5 seconds, a curing reaction rate thereof is 80% or more.

A piezoelectric vibration component that includes a piezoelectric vibrator, a substrate, and a conductive adhesive that bonds the piezoelectric vibrator to the substrate. The conductive adhesive contains a silicone-based base resin, a cross-linker, a conductive filler, and an insulating filler. The silicone-based base resin has a weight-average molecular weight of 20,000 to 102,000. The cross-linker has a number-average molecular weight of 1,950 to 4,620. The conductive filler and the insulating filler have a particle size of 10 μm or less.