Disclosed in the present specification is a micro LED display device, and a manufacturing method therefor, the method forming, in advance, an anisotropic conductive adhesive paste layer only on a conductive electrode part of a semiconductor light emitting element and on a peripheral part thereof, and then transferring the anisotropic conductive adhesive paste layer to a wiring substrate, thereby simultaneously performing a transfer step and a stable wiring step.

Disclosed in the present specification is a micro LED display device, and a manufacturing method therefor, the method forming, in advance, an anisotropic conductive adhesive paste layer only on a conductive electrode part of a semiconductor light emitting element and on a peripheral part thereof, and then transferring the anisotropic conductive adhesive paste layer to a wiring substrate, thereby simultaneously performing a transfer step and a stable wiring step.

Semiconductor dies including ultra-thin wafer backmetal systems, microelectronic devices containing such semiconductor dies, and associated fabrication methods are disclosed. In one embodiment, a method for processing a device wafer includes obtaining a device wafer having a wafer frontside and a wafer backside opposite the wafer frontside. A wafer-level gold-based ohmic bond layer, which has a first average grain size and which is predominately composed of gold, by weight, is sputter deposited onto the wafer backside. An electroplating process is utilized to deposit a wafer-level silicon ingress-resistant plated layer over the wafer-level Au-based ohmic bond layer, while imparting the plated layer with a second average grain size exceeding the first average grain size. The device wafer is singulated to separate the device wafer into a plurality of semiconductor die each having a die frontside, an Au-based ohmic bond layer, and a silicon ingress-resistant plated layer.

Semiconductor dies including ultra-thin wafer backmetal systems, microelectronic devices containing such semiconductor dies, and associated fabrication methods are disclosed. In one embodiment, a method for processing a device wafer includes obtaining a device wafer having a wafer frontside and a wafer backside opposite the wafer frontside. A wafer-level gold-based ohmic bond layer, which has a first average grain size and which is predominately composed of gold, by weight, is sputter deposited onto the wafer backside. An electroplating process is utilized to deposit a wafer-level silicon ingress-resistant plated layer over the wafer-level Au-based ohmic bond layer, while imparting the plated layer with a second average grain size exceeding the first average grain size. The device wafer is singulated to separate the device wafer into a plurality of semiconductor die each having a die frontside, an Au-based ohmic bond layer, and a silicon ingress-resistant plated layer.

A curable resin or adhesive composition includes at least one monomer, a photoinitiator capable of initiating polymerization of the monomer when exposed to light, and at least one energy converting material, preferably a phosphor, capable of producing light when exposed to radiation (typically X-rays). The material is particularly suitable for bonding components at ambient temperature in situations where the bond joint is not accessible to an external light source. An associated method includes: placing a polymerizable adhesive composition, including a photoinitiator and energy converting material, such as a down-converting phosphor, in contact with at least two components to be bonded to form an assembly; and, irradiating the assembly with radiation at a first wavelength, capable of conversion (down-conversion by the phosphor) to a second wavelength capable of activating the photoinitiator, to prepare items such as inkjet cartridges, wafer-to-wafer assemblies, semiconductors, integrated circuits, and the like.

A thermosetting sheet according to the present invention includes a thermosetting resin and a thermoplastic resin, in which a thickness change rate when a temperature is changed from 25° C. to 200° C. is 0% or more and 10% or less.

A thermosetting sheet according to the present invention includes a thermosetting resin and a thermoplastic resin, in which a thickness change rate when a temperature is changed from 25° C. to 200° C. is 0% or more and 10% or less.

Die-substrate assemblies having sinter-bonded backside via structures, and methods for fabricating such die-substrate assemblies, are disclosed. In embodiments, the method includes obtaining an integrated circuit (IC) die having a backside over which a backmetal layer is formed and into which a plated backside via extends. The IC die is attached to an electrically-conductive substrate by: (i) applying sinter precursor material over the backmetal layer and into the plated backside via; (ii) positioning a frontside of the electrically-conductive substrate adjacent the plated backmetal layer and in contact with the sinter precursor material; and (iii) sintering the sinter precursor material to yield a sintered bond layer attaching and electrically coupling the IC die to the frontside of the electrically-conductive substrate through the backmetal layer and through the plated backside via. The sintered bond layer contacts and is metallurgically bonded to the backside via lining.

Die-substrate assemblies having sinter-bonded backside via structures, and methods for fabricating such die-substrate assemblies, are disclosed. In embodiments, the method includes obtaining an integrated circuit (IC) die having a backside over which a backmetal layer is formed and into which a plated backside via extends. The IC die is attached to an electrically-conductive substrate by: (i) applying sinter precursor material over the backmetal layer and into the plated backside via; (ii) positioning a frontside of the electrically-conductive substrate adjacent the plated backmetal layer and in contact with the sinter precursor material; and (iii) sintering the sinter precursor material to yield a sintered bond layer attaching and electrically coupling the IC die to the frontside of the electrically-conductive substrate through the backmetal layer and through the plated backside via. The sintered bond layer contacts and is metallurgically bonded to the backside via lining.

The purpose of the present invention is to provide an adhesive composition which allows an alignment mark to be recognized, ensures sufficient solder wettability of a joining section, and is excellent in suppression of void generation. The adhesive composition includes: a high-molecular compound (A); an epoxy compound (B) having a weight average molecular weight of 100 or more and 3,000 or less; and a flux (C); and inorganic particles (D) which have on the surfaces thereof an alkoxysilane having a phenyl group and which have an average, particle diameter of 30 to 200 nm, the flux (C) containing an acid-modified rosin.