H01L2224/29493

ADHESIVE COMPOSITION, FILM-LIKE ADHESIVE AND PRODUCTION METHOD THEREOF, AND SEMICONDUCTOR PACKAGE USING FILM-LIKE ADHESIVE AND PRODUCTION METHOD THEREOF
20210292617 · 2021-09-23 · ·

An adhesive composition, containing an epoxy resin (A), an epoxy resin curing agent (B), a polymer component (C) and an inorganic filler (D), in which the inorganic filler (D) satisfies the condition (1) of (an average particle diameter (d50) is 0.1 to 3.5 μm) and condition (2) of (a ratio of a particle diameter at 90% cumulative distribution frequency (d90) to the average particle diameter (d50) is 5.0 or less), and a proportion of the inorganic filler (D) in a total content of the epoxy resin (A), the epoxy resin curing agent (B), the polymer component (C) and the inorganic filler (D) is 20 to 70% by volume; a film-like adhesive and a production method thereof; and a semiconductor package and a production method thereof.

LIGHT-EMITTING DEVICE

A light-emitting device includes: a light-emitting element including a first surface provided as a light extraction surface, a second surface opposite to the first surface, a plurality of third surfaces between the first surface and the second surface, and a positive electrode and a negative electrode at the second surface; a light-transmissive member disposed at the first surface; and a bonding member disposed between the light-emitting element and the light-transmissive member and covering from the first surface to the plurality of third surfaces of the light-emitting element to bond the light-emitting element and the light-transmissive member. The bonding member is made of a resin that contains nanoparticles. The nanoparticles have a particle diameter of 1 nm or more and 30 nm or less and a content of 10 mass % or more and 20 mass % or less.

Electrically conductive adhesives

Disclosed herein are electrically conductive adhesives (ECA) comprising: (a) organic binder, (b) electrically conductive powders comprised of surface coated spherical copper particles and surface coated flaky copper particles, and optional (c) solvent.

Electrically conductive adhesives

Disclosed herein are electrically conductive adhesives (ECA) comprising: (a) organic binder, (b) electrically conductive powders comprised of surface coated spherical copper particles and surface coated flaky copper particles, and optional (c) solvent.

METAL PASTE FOR JOINTS, ASSEMBLY, PRODUCTION METHOD FOR ASSEMBLY, SEMICONDUCTOR DEVICE, AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE

Provided is a metal paste for joints, containing: metal particles; and linear or branched monovalent aliphatic alcohol having 1 to 20 carbon atoms, in which the metal particles include sub-micro copper particles having a volume average particle diameter of 0.12 m to 0.8 M.

Silver sintering preparation and the use thereof for the connecting of electronic components

A silver sintering preparation in the form of a silver sintering paste comprising 70 to 95 wt.-% of coated silver particles (A) and 5 to 30 wt.-% of organic solvent (B) or in the form of a silver sintering preform comprising 74.5 to 100 wt.-% of coated silver particles (A) and 0 to 0.5 wt.-% of organic solvent (B), wherein the coating of the coated silver particles (A) comprises silver acetylacetonate (silver 2,4-pentanedionate) and/or at least one silver salt of the formula C.sub.nH.sub.2n+1COOAg with n being an integer in the range of 7 to 10, and wherein the at least one silver salt is thermally decomposable at >160? C.

Adhesive composition, film-like adhesive and production method thereof, and semiconductor package using film-like adhesive and production method thereof
11952513 · 2024-04-09 · ·

An adhesive composition, containing an epoxy resin (A), an epoxy resin curing agent (B), a polymer component (C) and an inorganic filler (D), in which the inorganic filler (D) satisfies the condition (1) of (an average particle diameter (d50) is 0.1 to 3.5 ?m) and condition (2) of (a ratio of a particle diameter at 90% cumulative distribution frequency (d90) to the average particle diameter (d50) is 5.0 or less), and a proportion of the inorganic filler (D) in a total content of the epoxy resin (A), the epoxy resin curing agent (B), the polymer component (C) and the inorganic filler (D) is 20 to 70% by volume; a film-like adhesive and a production method thereof; and a semiconductor package and a production method thereof.

Copper paste for joining, method for producing joined body, and method for producing semiconductor device

Provided is copper paste for joining including metal particles, and a dispersion medium. The metal particles include sub-micro copper particles having a volume-average particle size of 0.12 m to 0.8 m, and micro copper particles having a volume-average particle size of 2 m to 50 m, a sum of the amount of the sub-micro copper particles contained and the amount of the micro copper particles contained is 80% by mass or greater on the basis of a total mass of the metal particles, and the amount of the sub-micro copper particles contained is 30% by mass to 90% by mass on the basis of a sum of a mass of the sub-micro copper particles and a mass of the micro copper particles.

SILVER SINTERING PREPARATION AND THE USE THEREOF FOR THE CONNECTING OF ELECTRONIC COMPONENTS
20240189905 · 2024-06-13 ·

A silver sintering preparation in the form of a silver sintering paste comprising 70 to 95 wt.-% of coated silver particles (A) and 5 to 30 wt.-% of organic solvent (B) or in the form of a silver sintering preform comprising 74.5 to 100 wt.-% of coated silver particles (A) and 0 to 0.5 wt.-% of organic solvent (B), wherein the coating of the coated silver particles (A) comprises at least one silver salt of the formula C.sub.nH.sub.2n+1COOAg with n being an integer in the range of 7 to 10, and wherein the at least one silver salt is thermally decomposable at >160? C.

Semiconductor Device and Method of Making a Semiconductor Package with Graphene for Die Attach
20240194629 · 2024-06-13 · ·

A semiconductor device has a substrate with a die pad. A conductive material is disposed on the die pad. The conductive material includes a plurality of graphene-coated metal balls in a matrix. A semiconductor die is disposed on the conductive material. The conductive material is sintered using an infrared laser. A bond wire is formed between the semiconductor die and substrate. An encapsulant is deposited over the semiconductor die and bond wire.