Patent classifications
H01L2224/29244
DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
A display device including a lower substrate having a display area and a pad area, a display structure disposed in the display area of the lower substrate, an upper substrate disposed on the display structure in the display area, and facing the lower substrate, pad electrodes disposed in the pad area of the lower substrate and spaced apart from each other in a first direction parallel to a top surface of the lower substrate, a conductive film member including conductive balls disposed on the pad electrodes and having a first area overlapping the pad electrodes and a second area not overlapping the pad electrodes, and a film package disposed on the conductive film member and including bump electrodes overlapping the first area of the conductive film member, in which the shape of the conductive balls disposed in the first area is different from those disposed in the second area.
Microelectronic components having integrated heat dissipation posts and systems including the same
Microelectronic systems and components having integrated heat dissipation posts are disclosed, as are methods for fabricating such microelectronic systems and components. In various embodiments, the microelectronic system includes a substrate having a frontside, a socket cavity, and inner cavity sidewalls defining the socket cavity. A microelectronic component is seated on the frontside of the substrate such that a heat dissipation post, which projects from the microelectronic component, is received in the socket cavity and separated from the inner cavity sidewalls by a peripheral clearance. The microelectronic system further includes a bond layer contacting the inner cavity sidewalls, contacting an outer peripheral portion of the heat dissipation post, and at least partially filling the peripheral clearance.
Methods of forming power electronic assemblies using metal inverse opals and cap structures
Methods for forming bonded assemblies using metal inverse opal and cap structures are disclosed. In one embodiment, a method for forming a bonded assembly includes positioning a substrate against a polymer support that is porous, depositing a metal onto and within the polymer support, disposing a cap layer to the polymer support opposite of the substrate to form a bottom electrode, and removing the polymer support from between the substrate and the cap layer to form a metal inverse opal structure disposed therebetween.
Methods of forming power electronic assemblies using metal inverse opals and cap structures
Methods for forming bonded assemblies using metal inverse opal and cap structures are disclosed. In one embodiment, a method for forming a bonded assembly includes positioning a substrate against a polymer support that is porous, depositing a metal onto and within the polymer support, disposing a cap layer to the polymer support opposite of the substrate to form a bottom electrode, and removing the polymer support from between the substrate and the cap layer to form a metal inverse opal structure disposed therebetween.
SHEET FOR SINTERING BONDING AND SHEET FOR SINTERING BONDING WITH BASE MATERIAL
To provide a sheet for sintering bonding and a sheet for sintering bonding with a base material that are suited for properly supplying a material for sintering bonding to a face planned to be bonded of a bonding object. A sheet for sintering bonding 10 according to the present invention comprises an electrically conductive metal containing sinterable particle and a binder component. In the sheet for sintering bonding 10, the shear strength at 23 C., F (MPa), measured in accordance with a SAICAS method and the minimum load, f (N), which is reached during an unloading process in load-displacement measurement in accordance with a nanoindentation method, satisfy 0.1F/f1. A sheet body X, which is a sheet for sintering bonding with a base material according to the present invention, has a laminated structure comprising a base material B and the sheet for sintering bonding 10.
Image display device
Provided is an image display device including a micro light emission element that is connected onto a drive circuit substrate incorporating a drive circuit of the micro light emission element. The micro light emission elements has a light emission surface on an opposite side to a bonding surface with the drive circuit, at least one of a surface on a connecting surface side of the micro light emission element and a surface on a connecting surface side of the drive circuit substrate has a protrusion portion and a recess portion, an electrode of the micro light emission element and an electrode of the drive circuit substrate side are connected to each other via a metal nanoparticle, and a space formed between the surface on the connecting surface side of the micro light emission element and a side of the surface on the connecting surface of the drive circuit substrate is filled with a photo-curing resin.
Component module and power module
The disclosed component module includes a component comprising at least one electric contact to which at least one porous contact piece is connected; the component module further includes a cooling system for fluid-based cooling, said cooling system comprising one or more cooling ducts which are formed by pores of the porous contact piece. The disclosed power module comprises a component module of said type.
POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR POWER SEMICONDUCTOR DEVICE
A power semiconductor device includes a substrate and a semiconductor element bonded onto a first surface of the substrate through use of a sintered metal bonding material. The substrate has a plurality of dimples formed in the first surface and located outside a location immediately below a heat generation unit of the semiconductor element. The sintered metal bonding material is supplied onto the substrate after the formation of the dimples, and the semiconductor element is bonded to the substrate through application of heat and a pressure thereto.
Sintering pastes with high metal loading for semiconductor die attach applications
A semiconductor die attach composition with greater than 60% metal volume after thermal reaction having: (a) 80-99 wt % of a mixture of metal particles comprising 30-70 wt % of a lead-free low melting point (LMP) particle composition comprising at least one LMP metal Y that melts below a temperature T1, and 25-70 wt % of a high melting point (HMP) particle composition comprising at least one metallic element M that is reactive with the at least one LMP metal Y at a process temperature T1, wherein the ratio of wt % of M to wt % of Y is at least 1.0; (b) 0-30 wt % of a metal powder additive A; and (c) a fluxing vehicle having a volatile portion, and not more than 50 wt % of a non-volatile portion.
METHODS OF FORMING POWER ELECTRONIC ASSEMBLIES USING METAL INVERSE OPAL STRUCTURES AND ENCAPSULATED-POLYMER SPHERES
A method of forming a bonding assembly that includes positioning a plurality of polymer spheres against an opal structure and placing a substrate against a second major surface of the opal structure. The opal structure includes the first major surface and the second major surface with a plurality of voids defined therebetween. The plurality of polymer spheres encapsulates a solder material disposed therein and contacts the first major surface of the opal structure. The method includes depositing a material within the voids of the opal structure and removing the opal structure to form an inverse opal structure between the first and second major surfaces. The method further includes removing the plurality of polymer spheres to expose the solder material encapsulated therein and placing a semiconductor device onto the inverse opal structure in contact with the solder material.