A method of forming a bonding assembly that includes positioning a plurality of polymer spheres against an opal structure and placing a substrate against a second major surface of the opal structure. The opal structure includes the first major surface and the second major surface with a plurality of voids defined therebetween. The plurality of polymer spheres encapsulates a solder material disposed therein and contacts the first major surface of the opal structure. The method includes depositing a material within the voids of the opal structure and removing the opal structure to form an inverse opal structure between the first and second major surfaces. The method further includes removing the plurality of polymer spheres to expose the solder material encapsulated therein and placing a semiconductor device onto the inverse opal structure in contact with the solder material.

Methods for forming bonded assemblies using metal inverse opal and cap structures are disclosed. In one embodiment, a method for forming a bonded assembly includes positioning a substrate against a polymer support that is porous, depositing a metal onto and within the polymer support, disposing a cap layer to the polymer support opposite of the substrate to form a bottom electrode, and removing the polymer support from between the substrate and the cap layer to form a metal inverse opal structure disposed therebetween.

Methods for forming bonded assemblies using metal inverse opal and cap structures are disclosed. In one embodiment, a method for forming a bonded assembly includes positioning a substrate against a polymer support that is porous, depositing a metal onto and within the polymer support, disposing a cap layer to the polymer support opposite of the substrate to form a bottom electrode, and removing the polymer support from between the substrate and the cap layer to form a metal inverse opal structure disposed therebetween.

A composition exhibits excellent heat resistance and mounting reliability when bonding a semiconductor power element to a metal lead frame, which is also free of lead and thereby places little burden on the environment. An electrically conductive composition contains at least a sulfide compound represented by RSR (wherein R is an organic group containing at least carbon; R is an organic group that is the same as or different from R; and R and R may be bonded to each other to form a so-called cyclic sulfide) and metal particles containing at least Cu, Sn or Ni as its essential component. Further, a conductive paste and a conductive bonding film each are produced using the electrically conductive composition. A dicing die bonding film is obtained by bonding the conductive bonding film with an adhesive tape.

Provided is an electroconductive adhesive which is less apt to suffer cracking, chipping, etc. upon sintering and gives sintered objects having excellent mechanical strength. The electroconductive adhesive comprises metallic microparticles which include a protective layer comprising one or more amines and have an average particle diameter of 30-300 nm, the amines comprising a C.sub.5-7 monoalkylamine and/or an alkoxyamine represented by the following general formula (1). NH.sub.2R.sup.2OR.sup.1 (1) In the protective layer, the ratio of the C.sub.5-7 monoalkylamine and/or alkoxyamine represented by the general formula (1) to one or more amines different therefrom is in the range of 100:0 to 10:90. [In formula (1), R.sup.1 represents a C.sub.1-4 alkyl group and R.sup.2 represents a C.sub.1-4 alkylene group.]

A semiconductor device and method is disclosed. In one embodiment, the semiconductor device comprises a semiconductor die comprising a first surface and a second surface opposite to the first surface, a first metallization layer disposed on the first surface of the semiconductor die, a first solder layer disposed on the first metallization layer, wherein the first solder layer contains the compound Sn/Sb, and a first contact member comprising a Cu-based base body and a Ni-based layer disposed on a main surface of the Cu-based base body, wherein the first contact member is connected with the Ni-based layer to the first solder layer.

Provided is a metal paste for joints, containing: metal particles; and linear or branched monovalent aliphatic alcohol having 1 to 20 carbon atoms, in which the metal particles include sub-micro copper particles having a volume average particle diameter of 0.12 m to 0.8 M.

Provided is a joined body including: a first member; a second member; and a sintered metal layer that joins the first member and the second member. The sintered metal layer includes a structure that is derived from flake-shaped copper particles which are oriented in approximately parallel to an interface between the first member or the second member, and the sintered metal layer, and the amount of copper contained in the sintered metal layer is 65% by volume or greater on the basis of a volume of the sintered metal layer.

Provided are a sintered material excellent in both thermal stress and bonding strength; a connection structure comprising the sintered material; a composition for bonding with which the sintered material can be produced; and a method for producing the sintered material. The sintered material comprises a base portion, one or more buffer portions, and one or more filling portions. The buffer portions and the filling portions are dispersed in the base portion. The base portion is a metal sintered body, each buffer portion is formed from at least one of a pore and a material that is not the same as that of the sintered body, and each filling portion is formed from at least one of particles and fibers. The sintered material satisfies A>B, where A is the kurtosis of volume distribution of the base portions in a three-dimensional image of the sintered material, and B is the kurtosis of volume distribution of the base portions in a three-dimensional image of the sintered material from which the filling portions are removed.

Provided are a sintered material excellent in both thermal stress and bonding strength; a connection structure comprising the sintered material; a composition for bonding with which the sintered material can be produced; and a method for producing the sintered material. The sintered material comprises a base portion, one or more buffer portions, and one or more filling portions. The buffer portions and the filling portions are dispersed in the base portion. The base portion is a metal sintered body, each buffer portion is formed from at least one of a pore and a material that is not the same as that of the sintered body, and each filling portion is formed from at least one of particles and fibers. The sintered material satisfies A>B, where A is the kurtosis of volume distribution of the base portions in a three-dimensional image of the sintered material, and B is the kurtosis of volume distribution of the base portions in a three-dimensional image of the sintered material from which the filling portions are removed.