A conductive film includes an elongated release film and a plurality of conductive adhesive film pieces provided on the release film. Then, the plurality of adhesive film pieces are arranged in a longitudinal direction X of the release film. For this reason, the adhesive film piece can be set to an arbitrary shape. Accordingly, it is possible to attach the adhesive film piece to adhesive surfaces having various shapes and to efficiently use the adhesive film piece.

A composition exhibits excellent heat resistance and mounting reliability when bonding a semiconductor power element to a metal lead frame, which is also free of lead and thereby places little burden on the environment. An electrically conductive composition contains at least a sulfide compound represented by R—S—R′ (wherein R is an organic group containing at least carbon; R′ is an organic group that is the same as or different from R; and R and R′ may be bonded to each other to form a so-called cyclic sulfide) and metal particles containing at least Cu, Sn or Ni as its essential component. Further, a conductive paste and a conductive bonding film each are produced using the electrically conductive composition. A dicing die bonding film is obtained by bonding the conductive bonding film with an adhesive tape.

A semiconductor assembly includes a substrate including a metal die attach surface, a semiconductor die that is arranged on the substrate, the semiconductor die being configured as a power semiconductor device and comprising a semiconductor body, a rear side metallization, and a front side layer stack, the front side layer stack comprising a front side metallization and a contaminant protection layer that is between the front side metallization and the semiconductor body, and a diffusion soldered joint between the metal die attach surface and the rear side metallization, the diffusion soldered joint comprising one or more intermetallic phases throughout the diffusion soldered joint, wherein the contaminant protection layer is configured to prevent transmission of contaminants into the semiconductor body.

A manufacturing method includes the step of forming a diced semiconductor wafer (10) including semiconductor chips (11) from a semiconductor wafer (W) typically on a dicing tape (T1). The diced semiconductor wafer (10) on the dicing tape (T1) is laminated with a sinter-bonding sheet (20). The semiconductor chips (11) each with a sinter-bonding material layer (21) derived from the sinter-bonding sheet (20) are picked up typically from the dicing tape (T1). The semiconductor chips (11) each with the sinter-bonding material layer are temporarily secured through the sinter-bonding material layer (21) to a substrate. Through a heating process, sintered layers are formed from the sinter-bonding material layers (21) lying between the temporarily secured semiconductor chips (11) and the substrate, to bond the semiconductor chips (11) to the substrate. The semiconductor device manufacturing method is suitable for efficiently supplying a sinter-bonding material to individual semiconductor chips while reducing loss of the sinter-bonding material.

A conductive film includes an elongated release film and a plurality of conductive adhesive film pieces provided on the release film. Then, the plurality of adhesive film pieces are arranged in a longitudinal direction X of the release film. For this reason, the adhesive film piece can be set to an arbitrary shape. Accordingly, it is possible to attach the adhesive film piece to adhesive surfaces having various shapes and to efficiently use the adhesive film piece.

A metal sintering preparation containing (A) 50 to 90% by weight of at least one metal that is present in the form of particles having a coating that contains at least one organic compound, and (B) 6 to 50% by weight organic solvent. The mathematical product of tamped density and specific surface of the metal particles of component (A) is in the range of 40,000 to 80,000 cm.sup.−1.

A semiconductor package includes a substrate, an integrated circuit disposed on the substrate, a memory support disposed on the integrated circuit, stacked memory disposed on the memory support and in communication with the integrated circuit, and a lid connected to the substrate. The integrated circuit has a low power region and a high power region. The memory support is disposed on the low power region of the integrated circuit and is configured to allow a flow of fluid therethrough to conduct heat away from the low power region of the integrated circuit. The lid defines a first port, a second port, and a lid volume fluidly connecting the first port and the second port. The lid volume is configured to house the integrated circuit, the memory support, and the stacked memory, while directing the flow of fluid to flow over the integrated circuit, the memory support, and the stacked memory.

A heat-dissipating structure is formed by bonding a first member and a second member, each being any of a metal, ceramic, and semiconductor, via a die bonding member; or a semiconductor module formed by bonding a semiconductor chip, a metal wire, a ceramic insulating substrate, and a heat-dissipating base substrate including metal, with a die bonding member interposed between each. At least one of the die bonding members includes a lead-free low-melting-point glass composition and metal particles. The lead-free low-melting-point glass composition accounts for 78 mol % or more in terms of the total of the oxides V2O5, TeO2, and Ag2O serving as main ingredients. The content of each of TeO2 and Ag2O is 1 to 2 times the content of V2O5, and at least one of BaO, WO3, and P2O5 is included as accessory ingredients, and at least one of Y2O3, La2O3, and Al2O3 is included as additional ingredients.

In a method of manufacturing a semiconductor device of one embodiment, support members and a film which is formed of a paste containing metal particles and surrounds the support members are provided above a surface of a base. Then a semiconductor element is provided above the support members and the film. Subsequently, the film is sintered to join the base and the semiconductor element. The support members are formed of a metal which melts at a temperature equal to or below a sintering temperature of the metal particles contained in the paste. The support members support the semiconductor element after the semiconductor element is provided above the support members and the film.

The present invention addresses the problem of providing a conductive paste that achieves both low resistance and high adhesion strength (die shear strength) of the resulting conductive body after firing.

The present invention provides a conductive paste comprising: (A) copper fine particles having an average particle diameter of 50 nm to 400 nm and a crystallite diameter of 20 nm to 50 nm; (B) copper particles having an average particle diameter of 0.8 μm to 5 μm and a ratio of a crystallite diameter to the crystallite diameter of the copper particles (A) of 1.0 to 2.0; and (C) a solvent.