Several embodiments of the present technology are described with reference to a semiconductor die assembly and processes for manufacturing the assembly. In some embodiments of the present technology, a semiconductor die assembly includes a stack of semiconductor dies attached to a thermal transfer structure (also known as a “heat spreader,” “lid,” or “thermal lid”). The thermal transfer structure conducts heat away from the stack of semiconductor dies. Additionally, the assembly can include molded walls fabricated with molding material to support the thermal transfer structure.

Invention compositions are a replacement for high melting temperature solder pastes and preforms in high operating temperature and step-soldering applications. In the use of the invention, a mixture of metallic powders reacts below 350 degrees C. to form a dense metallic joint that does not remelt at the original process temperature.

Invention compositions are a replacement for high melting temperature solder pastes and preforms in high operating temperature and step-soldering applications. In the use of the invention, a mixture of metallic powders reacts below 350 degrees C. to form a dense metallic joint that does not remelt at the original process temperature.

Several embodiments of the present technology are described with reference to a semiconductor apparatus. In some embodiments of the present technology, a semiconductor apparatus includes a stack of semiconductor dies attached to a thermal transfer structure. The thermal transfer structure conducts heat away from the stack of semiconductor dies. Additionally, the assembly can include molded walls to support the thermal transfer structure.

A method can include coupling a semiconductor chip and an electrode with a substrate. Bottom and top mold die can be use, where the top mold die define a first space and a second space that is separated from the first space. The method can include injecting encapsulation material to form an encapsulation member coupled to and covering at least a portion of the substrate. The encapsulation member can include a housing unit housing the electrode. The electrode can have a conductive sidewall exposed to, and not in contact with the encapsulation member, such that there is open space between the conductive sidewall of the electrode and the encapsulation member from an uppermost surface to a bottommost surface of the encapsulation member, the substrate can having a portion exposed within the open space, and the encapsulation member can have an open cross-section perpendicular to an upper surface of the substrate.

A method can include coupling a semiconductor chip and an electrode with a substrate. Bottom and top mold die can be use, where the top mold die define a first space and a second space that is separated from the first space. The method can include injecting encapsulation material to form an encapsulation member coupled to and covering at least a portion of the substrate. The encapsulation member can include a housing unit housing the electrode. The electrode can have a conductive sidewall exposed to, and not in contact with the encapsulation member, such that there is open space between the conductive sidewall of the electrode and the encapsulation member from an uppermost surface to a bottommost surface of the encapsulation member, the substrate can having a portion exposed within the open space, and the encapsulation member can have an open cross-section perpendicular to an upper surface of the substrate.

Provided is a power module package including: a substrate; at least one electrode arranged on the substrate; and an encapsulation member covering at least a portion of the substrate, the encapsulation member including a housing unit housing the at least one electrode. The at least one electrode is spaced apart from the encapsulation member.

Provided is a power module package including: a substrate; at least one electrode arranged on the substrate; and an encapsulation member covering at least a portion of the substrate, the encapsulation member including a housing unit housing the at least one electrode. The at least one electrode is spaced apart from the encapsulation member.

A cationically polymerizable anisotropic conductive film is provided. The cationically polymerizable anisotropic conductive film includes an alicyclic epoxy compound and achieves storage life property better than known anisotropic conductive films while ensuring curing temperature and connection reliability equivalent to known anisotropic conductive films. The anisotropic conductive film contains a binder composition containing a film forming component and a cationically polymerizable component, a cationic polymerization initiator, and conductive particles. The anisotropic conductive film contains a quaternary ammonium salt-based thermal acid generator as a cationic polymerization initiator and an alicyclic epoxy compound and a low polarity oxetane compound as a cationically polymerizable component.

A cationically polymerizable anisotropic conductive film is provided. The cationically polymerizable anisotropic conductive film includes an alicyclic epoxy compound and achieves storage life property better than known anisotropic conductive films while ensuring curing temperature and connection reliability equivalent to known anisotropic conductive films. The anisotropic conductive film contains a binder composition containing a film forming component and a cationically polymerizable component, a cationic polymerization initiator, and conductive particles. The anisotropic conductive film contains a quaternary ammonium salt-based thermal acid generator as a cationic polymerization initiator and an alicyclic epoxy compound and a low polarity oxetane compound as a cationically polymerizable component.