Several embodiments of the present technology are described with reference to a semiconductor apparatus. In some embodiments of the present technology, a semiconductor apparatus includes a stack of semiconductor dies attached to a thermal transfer structure. The thermal transfer structure conducts heat away from the stack of semiconductor dies. Additionally, the assembly can include molded walls to support the thermal transfer structure.

A method includes dicing a wafer to form discrete components; transferring the discrete components onto a transparent carrier, including adhering the discrete component to a carrier release layer on the transparent carrier; and releasing one of the discrete components from the transparent carrier, the one of the discrete components being deposited onto a device substrate after the releasing.

A method includes dicing a wafer to form discrete components; transferring the discrete components onto a transparent carrier, including adhering the discrete component to a carrier release layer on the transparent carrier; and releasing one of the discrete components from the transparent carrier, the one of the discrete components being deposited onto a device substrate after the releasing.

Provided are a sintered material excellent in both thermal stress and bonding strength; a connection structure comprising the sintered material; a composition for bonding with which the sintered material can be produced; and a method for producing the sintered material. The sintered material comprises a base portion, one or more buffer portions, and one or more filling portions. The buffer portions and the filling portions are dispersed in the base portion. The base portion is a metal sintered body, each buffer portion is formed from at least one of a pore and a material that is not the same as that of the sintered body, and each filling portion is formed from at least one of particles and fibers. The sintered material satisfies A>B, where A is the kurtosis of volume distribution of the base portions in a three-dimensional image of the sintered material, and B is the kurtosis of volume distribution of the base portions in a three-dimensional image of the sintered material from which the filling portions are removed.

Provided are a sintered material excellent in both thermal stress and bonding strength; a connection structure comprising the sintered material; a composition for bonding with which the sintered material can be produced; and a method for producing the sintered material. The sintered material comprises a base portion, one or more buffer portions, and one or more filling portions. The buffer portions and the filling portions are dispersed in the base portion. The base portion is a metal sintered body, each buffer portion is formed from at least one of a pore and a material that is not the same as that of the sintered body, and each filling portion is formed from at least one of particles and fibers. The sintered material satisfies A>B, where A is the kurtosis of volume distribution of the base portions in a three-dimensional image of the sintered material, and B is the kurtosis of volume distribution of the base portions in a three-dimensional image of the sintered material from which the filling portions are removed.

A sintered material excellent in thermal stress and bonding strength; a connection structure containing the sintered material; a composition for bonding with which the sintered material can be produced; and a method for producing the sintered material. The sintered material has a base portion, buffer portions, and filling portions. The buffer portions and filling portions are dispersed in the base portion. The base portion is a metal sintered body, each buffer portion is formed from a pore and/or material that is not the same as the sintered body, and each filling portion is formed from particles and/or fibers. The sintered material satisfies A>B. A is the kurtosis of volume distribution of the base portions in a three-dimensional image of the sintered material. B is the kurtosis of volume distribution of the base portions in a three-dimensional image of the sintered material from which the filling portions are removed.

A sintered material excellent in thermal stress and bonding strength; a connection structure containing the sintered material; a composition for bonding with which the sintered material can be produced; and a method for producing the sintered material. The sintered material has a base portion, buffer portions, and filling portions. The buffer portions and filling portions are dispersed in the base portion. The base portion is a metal sintered body, each buffer portion is formed from a pore and/or material that is not the same as the sintered body, and each filling portion is formed from particles and/or fibers. The sintered material satisfies A>B. A is the kurtosis of volume distribution of the base portions in a three-dimensional image of the sintered material. B is the kurtosis of volume distribution of the base portions in a three-dimensional image of the sintered material from which the filling portions are removed.

A light emitting apparatus includes a positive lead terminal and a negative lead terminal, each of which includes a first main surface, a second main surface, and an end surface including a first recessed surface area extending from a first point of the first main surface in cross section, and a second recessed surface area extending from a second point of the second main surface in cross section. A distance between a first part of the end surface of the positive lead terminal and a second part of the end surface of the negative lead terminal than a first distance between the first points of the positive lead terminal and the negative lead terminal and a second distance between the second points of the positive lead terminal and the negative lead terminal. The first part and the second part are separated from the first point and the second point.

A method of deposition of a thermal interface material onto a circuit assembly and an integrated circuit formed therefrom is provided. The method includes depositing a thermal interface material at a first layer thickness between a first layer of a circuit assembly and a second layer of the circuit assembly. The thermal interface material includes an emulsion of liquid metal droplets and polymer. The first layer thickness is at least 1.1 times a D.sub.90 of the liquid metal droplets prior to compressing the circuit assembly. The method includes compressing the circuit assembly to decrease the first layer thickness to a second layer thickness, thereby deforming the liquid metal droplets. The second layer thickness is no greater than a D.sub.90 of the liquid metal droplets in thermal interface material prior to compressing the circuit assembly.

A thermal interface material, an integrated circuit formed therewith, and a method of application thereof are provided. The thermal interface material includes 5% to 30% by volume of a polymer component and at least 70% by volume of liquid metal droplets, all based on total volume of the thermal interface material. The polymer component has a first polymer having a molecular weight in a range of 400 g/mol to 400,000 g/mol. The liquid metal droplets are dispersed throughout the polymer component.