A laser bonding method includes forming a bonding part including an adhesive layer and a conductive particle disposed within the adhesive layer on a substrate; aligning a bonding target by disposing the bonding target on a surface of the bonding part opposite the substrate; disposing a pressing part on a surface of the bonding target that is opposite to the bonding part and pressing the bonding target onto the bonding part through the pressing part; heating the bonding target by irradiating at least the pressing part with a laser and conducting heat from the pressing part to the bonding target and from the bonding target to the bonding part; and bonding together the bonding part and the bonding target by the heat conducted from the bonding target to the bonding part so that the conductive particle electrically connects the substrate and the bonding target. The pressing part may be removed.

A laser bonding method includes forming a bonding part including an adhesive layer and a conductive particle disposed within the adhesive layer on a substrate; aligning a bonding target by disposing the bonding target on a surface of the bonding part opposite the substrate; disposing a pressing part on a surface of the bonding target that is opposite to the bonding part and pressing the bonding target onto the bonding part through the pressing part; heating the bonding target by irradiating at least the pressing part with a laser and conducting heat from the pressing part to the bonding target and from the bonding target to the bonding part; and bonding together the bonding part and the bonding target by the heat conducted from the bonding target to the bonding part so that the conductive particle electrically connects the substrate and the bonding target. The pressing part may be removed.

A semiconductor device comprises a semiconductor die, comprising a stacking structure, a first bonding pad with a first bonding surface positioned away from the stack structure, and a second bonding pad; a carrier comprising a connecting surface; a third bonding pad which comprises a second bonding surface and is arranged on the connecting surface, and a fourth bonding pad arranged on the connecting surface of the carrier; and a conductive connecting layer comprising a first conductive part, comprising a first outer contour, and formed between and directly contacting the first bonding pad and the third bonding pad; a second conductive part formed between the second bonding pad and the fourth bonding pad; and a blocking part covering the first conductive part to form a covering area, wherein the first bonding surface comprises a first position which is the closest to the carrier within the covering area and a second position which is the farthest from the carrier within the covering area in a cross section view, and a distance from the first position to the first out contour is greater than that from the second position to the first outer contour.

A semiconductor device comprises a semiconductor die, comprising a stacking structure, a first bonding pad with a first bonding surface positioned away from the stack structure, and a second bonding pad; a carrier comprising a connecting surface; a third bonding pad which comprises a second bonding surface and is arranged on the connecting surface, and a fourth bonding pad arranged on the connecting surface of the carrier; and a conductive connecting layer comprising a first conductive part, comprising a first outer contour, and formed between and directly contacting the first bonding pad and the third bonding pad; a second conductive part formed between the second bonding pad and the fourth bonding pad; and a blocking part covering the first conductive part to form a covering area, wherein the first bonding surface comprises a first position which is the closest to the carrier within the covering area and a second position which is the farthest from the carrier within the covering area in a cross section view, and a distance from the first position to the first out contour is greater than that from the second position to the first outer contour.

The present invention relates to a semiconductor device including: a first semiconductor element formed on an adherend; and an adhesive film for embedding the first semiconductor element, wherein the adhesive film satisfies a predetermined ratio between a melt viscosity and a weight loss ratio at a high temperature.

The present invention relates to a semiconductor device including: a first semiconductor element formed on an adherend; and an adhesive film for embedding the first semiconductor element, wherein the adhesive film satisfies a predetermined ratio between a melt viscosity and a weight loss ratio at a high temperature.

This tin or tin-alloy plating liquid contains (A) a soluble salt including at least a stannous salt; (B) an acid selected from an organic acid and an inorganic acid, or a salt thereof; (C) a surfactant; (D) a leveling agent; and (E) an additive, wherein the surfactant is a compound (C1) represented by Formula (1) and/or a compound (C2) represented by Formula (2).

##STR00001##

In Formulas (1) and (2), R is an alkyl group having 7 to 13 carbon atoms, m is 5 to 11, n is 1 to 3, and m and n are different from each other.

This tin or tin-alloy plating liquid contains (A) a soluble salt including at least a stannous salt; (B) an acid selected from an organic acid and an inorganic acid, or a salt thereof; (C) a surfactant; (D) a leveling agent; and (E) an additive, wherein the surfactant is a compound (C1) represented by Formula (1) and/or a compound (C2) represented by Formula (2).

##STR00001##

In Formulas (1) and (2), R is an alkyl group having 7 to 13 carbon atoms, m is 5 to 11, n is 1 to 3, and m and n are different from each other.

A method for manufacturing a micro light emitting diode (LED) display is provided. The method includes a first operation of applying a light-to-heat conversion layer to a first surface of a carrier substrate, a second operation of forming a first adhesive layer on the light-to-heat conversion layer a third operation of aligning a plurality of micro LED chips on the first adhesive layer, a fourth operation of positioning the plurality of micro LED chips above a circuit board at a first distance, a fifth operation of radiating a laser to the plurality of micro LED chips, and a sixth operation of causing the first adhesive layer to be deformed by the light-to-heat conversion layer, so that the plurality of micro LED chips are detached from the first adhesive layer to be attached to the circuit board. Various other embodiments are possible.

A method for manufacturing a micro light emitting diode (LED) display is provided. The method includes a first operation of applying a light-to-heat conversion layer to a first surface of a carrier substrate, a second operation of forming a first adhesive layer on the light-to-heat conversion layer a third operation of aligning a plurality of micro LED chips on the first adhesive layer, a fourth operation of positioning the plurality of micro LED chips above a circuit board at a first distance, a fifth operation of radiating a laser to the plurality of micro LED chips, and a sixth operation of causing the first adhesive layer to be deformed by the light-to-heat conversion layer, so that the plurality of micro LED chips are detached from the first adhesive layer to be attached to the circuit board. Various other embodiments are possible.