Embedded die packaging for semiconductor devices and methods of fabrication wherein conductive vias are provided to interconnect contact areas on the die and package interconnect areas. Before embedding, a protective masking layer is provided selectively on regions of the electrical contact areas where vias are to be formed by laser drilling. The material of the protective masking layer is selected to protect against over-drilling and/or to control absorption properties of surface of the pad metal to reduce absorption of laser energy during laser drilling of micro-vias, thereby mitigating physical damage, overheating or other potential damage to the semiconductor device. The masking layer may be resistant to surface treatment of other regions of the electrical contact areas, e.g. to increase surface roughness to promote adhesion of package dielectric.

The present invention is directed to a combination of hydrophilic and hydrophobic features disposed on a surface to control flow over the surface.

An apparatus and method of fabricating particles composed of metals, conducting polymers, semiconductors, and composites of such materials are provided. The method includes application of an editing tool, such as a laser, for patterning an editable structure that mounted on an electrically conductive substrate. Portions of the editable structure may be removed so as to allow electrodeposition.

The laser reflow apparatus of the present invention comprises a laser pressurization head module for pressing a bonding object, which includes a plurality of electronic components arranged on a substrate by a transmissive pressurization member while irradiating a laser beam through the pressurization member, to bond the electronic components to the substrate; and a bonding object transfer module for transferring the bonding object having transferred from one side of the laser pressurization head module to carry the bonding object to the other side thereof after passing through a reflow process of the laser pressurized head module.

Provided are a laser control structure and a laser bonding method using the same, and more particularly, a laser bonding method including: forming bonding portions on a substrate; providing a bonding object onto the bonding portions; providing a laser control structure onto the bonding object or the substrate; irradiating a laser toward the bonding object and the bonding portions; controlling quantity of laser light absorbed through the laser control structure; using the controlled quantity of laser light to heat the bonding portions and the bonding object to a bonding temperature; and bonding the bonding portions and the bonding object, wherein the laser control structure includes: a first substrate including a first region and a second region; a first thin film laminate on the first region; and a second thin film laminate on the second region, wherein: the first thin film laminate includes at least one first thin film layer and at least one second thin film layer, which are laminated on the first region; the second thin film laminate includes at least one third thin film layer and at least one fourth thin film layer, which are laminated on the second region; reflectance or absorptivity of the first thin film laminate with respect to laser is different from reflectance or absorptivity of the second thin film laminate; and the bonding temperature varies according to the quantity of laser light.

In a method of processing a substrate, in a second step, only some of a plurality of altered portions are exposed from an opening portion of a mask, and the remaining portions are not exposed. In this case, at the time of etching in a third step, an etching rate may be made different between the altered portions exposed from the opening portion of the mask and the altered portions which are not exposed. Accordingly, it becomes easier to obtain a desired processed shape by adjusting the altered portions exposed from the opening portion of the mask and the altered portions which are not exposed.

A method of marking information on a substrate for use in a semiconductor component is provided. The method comprises providing a substrate for use in a semiconductor component, providing a metal layer on a surface of the substrate, and providing a marking within the metal layer. A method of making a die, a radio-frequency module and a wireless mobile device; as well as a substrate, a die, a radio-frequency module and a wireless mobile device is also provided.

Apparatus and methods for forming fine scale structures (4, 4′, 4″, 5, 6, 7, 8) in the surface of a dielectric substrate (3) to two or more depths are disclosed. In an example, the apparatus comprises a first solid state laser (12) arranged to provide a first pulsed laser beam (13), a first mask (16) having a pattern for defining a first set of structures (4, 6, 7, 8) at a first depth, a projection lens (17) for forming a reduced size image of said pattern on the surface (3) of the substrate and a beam scanner arranged to scan said first pulsed laser beam (13) in a two-dimensional raster scan relative to the first pattern to form a first set of structures (4, 6, 7, 5) at a first depth in the substrate, wherein the first or a further solid state laser is arranged to form a second set of structures (8) at a second depth in the substrate (3).

A method for processing a part (10) with an energy beam A mask (70, 80) is arranged between a source of the energy beam and the part. The mask is configured with a beam-transmissive portion (71) in correspondence with mutually opposed portions (12, 14) of the part. Simultaneously heating the mutually opposed portions of the part is performed with energy beamlets passing through the beam-transmissive portions of the mask This simultaneous heating is configured to keep a thermally-induced distortion of the part within a predefined tolerance. Scanning of the mask with the energy beam may be performed without precisely tracking the mutually opposed portions of the part, thereby avoiding a need for complicated numerical programming for tracking a relatively complex geometry defined by the mutually opposed portions of the part.

A substrate processing system includes a laser processing apparatus including a holder and a radiation unit, the holder being configured to hold a substrate including a base substrate, an irregularity pattern formed on a main surface of the base substrate, and an irregularity layer formed along the irregularity pattern, the radiation unit being configured to radiate a laser beam to a protrusion of the irregularity layer to flatten the irregularity layer by removing the protrusion in a state that the substrate is held by the holder; a controller configured to control a position of an irradiation point of the laser beam; and a polishing apparatus configured to polish the irregularity layer in which the protrusion is removed with the laser beam to be flattened.