A method of performing a chemical mechanical planarization (CMP) process includes holding a wafer by a retainer ring attached to a carrier, pressing the wafer against a first surface of a polishing pad, the polishing pad rotating at a first speed, dispensing a slurry on the first surface of the polishing pad, and generating vibrations at the polishing pad.

A polishing method is used for polishing a substrate such as a semiconductor wafer to a flat mirror finish. A method of polishing a substrate by a polishing apparatus includes a polishing table (100) having a polishing surface, a top ring (1) for holding a substrate and pressing the substrate against the polishing surface, and a vertically movable mechanism (24) for moving the top ring (1) in a vertical direction. The top ring (1) is moved to a first height before the substrate is pressed against the polishing surface, and then the top ring (1) is moved to a second height after the substrate is pressed against the polishing surface.

A polishing method is used for polishing a substrate such as a semiconductor wafer to a flat mirror finish. A method of polishing a substrate by a polishing apparatus includes a polishing table (100) having a polishing surface, a top ring (1) for holding a substrate and pressing the substrate against the polishing surface, and a vertically movable mechanism (24) for moving the top ring (1) in a vertical direction. The top ring (1) is moved to a first height before the substrate is pressed against the polishing surface, and then the top ring (1) is moved to a second height after the substrate is pressed against the polishing surface.

A system and method for polishing a substrate, and a retaining ring assembly therefor, are described herein. A retaining ring assembly is configured to be attached to a carrier head. The retaining ring assembly includes a retaining ring including a lower surface, an inner surface, an outer surface and a plurality of grooves, where the lower surface is configured to contact a polishing pad during a polishing process, and each of the plurality of grooves are formed in the lower surface and extend from the inner surface to the outer surface. The retaining ring assembly includes a plurality of retainers, each retainer including a movable tooth at least partially disposed in a respective groove of the retaining ring and moveable relative to the lower surface.

A system and method for polishing a substrate, and a retaining ring assembly therefor, are described herein. A retaining ring assembly is configured to be attached to a carrier head. The retaining ring assembly includes a retaining ring including a lower surface, an inner surface, an outer surface and a plurality of grooves, where the lower surface is configured to contact a polishing pad during a polishing process, and each of the plurality of grooves are formed in the lower surface and extend from the inner surface to the outer surface. The retaining ring assembly includes a plurality of retainers, each retainer including a movable tooth at least partially disposed in a respective groove of the retaining ring and moveable relative to the lower surface.

A CMP tool for polishing a semiconductor wafer is disclosed. The CMP tool includes a polishing head with a wafer carrier unit on which a wafer is mounted for polishing. The wafer carrier unit includes a support plate with a seal disposed on its sidewall. The seal improves sealing of the flexible membrane to the support plate. This improves reliability by avoiding slippage during the dechucking stage as well as wafer slippage during wafer loading stage, thereby avoiding wafer damage as well as non-uniform polishing.

A CMP tool for polishing a semiconductor wafer is disclosed. The CMP tool includes a polishing head with a wafer carrier unit on which a wafer is mounted for polishing. The wafer carrier unit includes a support plate with a seal disposed on its sidewall. The seal improves sealing of the flexible membrane to the support plate. This improves reliability by avoiding slippage during the dechucking stage as well as wafer slippage during wafer loading stage, thereby avoiding wafer damage as well as non-uniform polishing.

A polishing head assembly for polishing of semiconductor wafers includes a polishing head and a cap. The polishing head has a top portion and a recess along a bottom portion. The recess has a recessed surface. Holes extend from the top portion through the recessed surface. The cap is positioned within the recess and the cap has an annular wall and a floor extending across the annular wall. The annular wall has apertures corresponding to the holes. The floor is spaced from the recessed surface to form a chamber therebetween. The polishing head assembly also includes a band that circumscribes a portion of the annular wall. The holes and the corresponding apertures receive fasteners to removably secure the annular wall to the recessed surface.

An apparatus for performing chemical mechanical polish on a wafer includes a polishing head that includes a retaining ring. The polishing head is configured to hold the wafer in the retaining ring. The retaining ring includes a first ring having a first hardness, and a second ring encircled by the first ring, wherein the second ring has a second hardness smaller than the first hardness.

An apparatus for performing chemical mechanical polish on a wafer includes a polishing head that includes a retaining ring. The polishing head is configured to hold the wafer in the retaining ring. The retaining ring includes a first ring having a first hardness, and a second ring encircled by the first ring, wherein the second ring has a second hardness smaller than the first hardness.