A retaining ring can be shaped by machining or lapping the bottom surface of the ring to form a shaped profile in the bottom surface. The bottom surface of the retaining ring can include flat, sloped and curved portions. The lapping can be performed using a machine that dedicated for use in lapping the bottom surface of retaining rings. During the lapping the ring can be permitted to rotate freely about an axis of the ring. The bottom surface of the retaining ring can have curved or flat portions.

A retaining ring can be shaped by machining or lapping the bottom surface of the ring to form a shaped profile in the bottom surface. The bottom surface of the retaining ring can include flat, sloped and curved portions. The lapping can be performed using a machine that dedicated for use in lapping the bottom surface of retaining rings. During the lapping the ring can be permitted to rotate freely about an axis of the ring. The bottom surface of the retaining ring can have curved or flat portions.

A polishing head of a wafer polishing apparatus is provided with: a membrane head that can independently control a center control pressure pressing a center portion of a wafer, and an outer periphery control pressure pressing an outer peripheral portion of the wafer; an outer ring integrated with the membrane head so as to configure the outer peripheral portion of the membrane head; and a contact type retainer ring provided outside the membrane head. The membrane head has a central pressure chamber of a single compartment structure that controls the center control pressure, and an outer peripheral pressure chamber that is provided above the central pressure chamber, and that controls the outer periphery control pressure. A position of a lower end of the outer ring reaches at least a position of an inner bottom surface of the central pressure chamber.

A polishing head of a wafer polishing apparatus is provided with: a membrane head that can independently control a center control pressure pressing a center portion of a wafer, and an outer periphery control pressure pressing an outer peripheral portion of the wafer; an outer ring integrated with the membrane head so as to configure the outer peripheral portion of the membrane head; and a contact type retainer ring provided outside the membrane head. The membrane head has a central pressure chamber of a single compartment structure that controls the center control pressure, and an outer peripheral pressure chamber that is provided above the central pressure chamber, and that controls the outer periphery control pressure. A position of a lower end of the outer ring reaches at least a position of an inner bottom surface of the central pressure chamber.

To provide improved planarization, techniques in accordance with this disclosure include a CMP station that includes a support plate having a plurality of apertures. An aperture of the plurality of apertures has a first opening and a second opening connected by a slot. Other systems and methods are also disclosed.

Embodiments of the disclosure generally relate to a retaining ring assembly having an annular lower portion, and an annular upper portion. The annular lower portion includes a step feature and an interlocking feature. In some configurations, adhesive is selective deposited on the step feature and the interlocking feature. The annular upper portion includes an opposing step recess, a first gap feature, an opposing interlocking recess and a second gap feature. When the upper portion and the lower portion are mated together, the interlocking recess is snapped into the upper portion tightly securing the lower portion to the upper portion.

Embodiments of the disclosure generally relate to a retaining ring assembly having an annular lower portion, and an annular upper portion. The annular lower portion includes a step feature and an interlocking feature. In some configurations, adhesive is selective deposited on the step feature and the interlocking feature. The annular upper portion includes an opposing step recess, a first gap feature, an opposing interlocking recess and a second gap feature. When the upper portion and the lower portion are mated together, the interlocking recess is snapped into the upper portion tightly securing the lower portion to the upper portion.

Provided is a top ring that ensures uniformly pressing a substrate against a polishing pad. A top ring 302 for holding a substrate WF includes a base member 301 coupled to a top ring shaft 18, an elastic film 320 that is mounted to the base member 301 and forms a pressurization chamber 322 for pressurizing the substrate WF between the base member 301 and the elastic film 320, a substrate suction member 330 that includes a porous member 334 including a substrate suction surface 334a for suctioning the substrate WF and a pressure reducing portion 334b communicating with a pressure reducing unit 31. The substrate suction member 330 is held to the elastic film 320.

Provided is a top ring that ensures uniformly pressing a substrate against a polishing pad. A top ring 302 for holding a substrate WF includes a base member 301 coupled to a top ring shaft 18, an elastic film 320 that is mounted to the base member 301 and forms a pressurization chamber 322 for pressurizing the substrate WF between the base member 301 and the elastic film 320, a substrate suction member 330 that includes a porous member 334 including a substrate suction surface 334a for suctioning the substrate WF and a pressure reducing portion 334b communicating with a pressure reducing unit 31. The substrate suction member 330 is held to the elastic film 320.

A method of performing a chemical mechanical planarization (CMP) process includes holding a wafer by a retainer ring attached to a carrier, pressing the wafer against a first surface of a polishing pad, the polishing pad rotating at a first speed, dispensing a slurry on the first surface of the polishing pad, and generating vibrations at the polishing pad.