A support substrate includes an insulating core layer, an electrically conductive layer over the insulating core layer and a solder mask layer over the electrically conductive layer. A back side of an integrated circuit chip is mounted to an upper surface of the support substrate at a die attach location. The upper surface of the support substrate includes a cavity located within the die attach location, where the cavity extends under the back side of the integrated circuit chip. The cavity is defined by an area where the solder mask layer and at least a portion of the electrically conductive layer have been removed. Bonding wires connect connection pads on a front side of the integrated circuit chip to connection pad on the upper surface of the support substrate.

A method of forming a monocrystalline nitinol film on a single crystal silicon wafer can comprise depositing a first seed layer of a first metal on the single crystal silicon wafer, the first seed layer growing epitaxially on the single crystal silicon wafer in response to the depositing the first seed layer of the first metal; and depositing the monocrystalline nitinol film on a final seed layer, the monocrystalline nitinol film growing epitaxially on the final seed layer in response to the depositing the monocrystalline nitinol film. The method can form a multilayer stack for a micro-electromechanical system MEMS device.

In certain embodiments, an accelerometer is a microelectromechanical systems (MEMS) device including a proof mass, an anchor located in an opening defined by a body of the proof mass, a spring, a drive electrode, and a sense beam. The spring and the proof mass form a spring system suspended from the anchor. The sense beam oscillates at a particular resonance frequency based on application of a signal to the drive electrode. The MEMS device further includes a support structure coupled to the anchor. The support structure operates as a stress decoupling area and includes a support beam, with the spring corresponding to an end of the support beam that has a reduced thickness. The sense beam has a first end attached to the proof mass and a second end attached to the support beam such that the sense beam is orthogonal to the support beam.

In the following, a sensor assembly is described. According to an exemplary embodiment, the sensor assembly has a housing enclosing a pressure chamber filled with a medium, the housing having a first housing part and a second housing part, the first housing part being connected to the second housing part to seal the pressure chamber in a pressure-tight manner A sensor chip is arranged in the pressure chamber, substantially surrounded by the medium, and configured to measure a pressure of the medium. The sensor assembly also includes a plurality of connection pins which are fed through the first housing part (carrier) by pressure-tight bushings and which are electrically connected to the sensor chip. The sensor assembly also has stress relieving structures which are configured to mechanically decouple the first housing part and a pressure-sensitive element of the sensor chip.

A MEMS package including a fixed frame, a moveable platform and elastic restoring members is provided. The moveable platform is moved with respect to the fixed frame. The elastic restoring members are connected between the fixed frame and the moveable platform, and used to restore the moved moveable platform to an original position.

A sensor device may include a base layer, and an ASIC element disposed on the base layer. The ASIC element may include a plurality of electrical contact points. The sensor device may include a MEMS element. The MEMS element may include a plurality of through-silicon vias. The sensor device may include a plurality of conductive contact elements. Each conductive contact element may be disposed between, and electrically coupling, a respective through-silicon via and a respective electrical contact point. The sensor device may include a protective layer disposed between the ASIC element and the MEMS element. The protective layer may be composed of material(s) having a physical property defined to permit the protective layer to mitigate stress forces directed from the ASIC element to the MEMS element, to prevent corrosion, and/or to prevent leakage current between electrical connections due to pollution and/or humidity.

Packaging of microfabricated devices, such as integrated circuits, microelectromechanical systems (MEMS), or sensor devices is described. The packaging is 3D heterogeneous packaging in at least some embodiments. The 3D heterogeneous packaging includes an interposer. The interposer includes stress relief platforms. Thus, stresses originating in the packaging do not propagate to the packaged device. A stress isolation platform is an example of a stress relief feature. A stress isolation platform includes a portion of an interposer coupled to the remainder of the interposer via stress isolation suspensions. Stress isolation suspensions can be formed by etching trenches through the interposer.

A semiconductor package structure includes a die paddle, a plurality of leads, an electronic component and a package body. Each of the plurality of leads is separated from the die paddle and has an inner side surface facing the die paddle. The electronic component is disposed on the die paddle. The package body covers the die paddle, the plurality of leads and the electronic component. The package body is in direct contact with a bottom surface of the die paddle and the inner side surface of the plurality of leads.

A microelectromechanical gyroscope is provided with a detection structure having: a substrate with a top surface parallel to a horizontal plane (xy); a mobile mass, suspended above the substrate to perform, as a function of a first angular velocity (Ω.sub.x) around a first axis (x) of the horizontal plane (xy), at least a first detection movement of rotation around a second axis (y) of the horizontal plane; and a first and a second stator elements integral with the substrate and arranged underneath the mobile mass to define a capacitive coupling, a capacitance value thereof is indicative of the first angular velocity (Ω.sub.x). The detection structure has a single mechanical anchorage structure for anchoring both the mobile mass and the stator elements to the substrate, arranged internally with respect to the mobile mass, which is coupled to this single mechanical anchorage structure by coupling elastic elements yielding to torsion around the second axis; the stator elements are integrally coupled to the single mechanical anchorage structure in an arrangement suspended above the top surface of the substrate.

An integrated device package is disclosed. The integrated device package can include a package housing that defines a cavity. The integrated device package can include an integrated device die that is disposed in the cavity. The integrated device die has a first surface includes a sensitive component. A second surface is free from a die attach material. The second surface is opposite the first surface. The integrated device die include a die cap that is bonded to the first surface. The integrated device package can also include a supporting structure that attaches the die cap to the package housing.