Described examples include a micromechanical device having a substrate. The micromechanical device includes a MEMS element and a via between the MEMS element and the substrate, the via having a conductive layer extending from the substrate to the MEMS element and having a structural integrity layer on the conductive layer.

A MEMS microphone includes a substrate defining a cavity, a diaphragm being spaced apart from the substrate, covering the cavity, and being configured to generate a displacement thereof in response to an applied acoustic pressure, an anchor extending from an end portion of the diaphragm, the anchor including a lower surface in contact with an upper surface of the substrate to support the diaphragm, a back plate disposed over the diaphragm, the back plate being spaced apart from the diaphragm such that an air gap is maintained between the back plate and the diaphragm, and defining a plurality of acoustic holes and an upper insulation layer provided on the substrate, covering the back plate, and holding the back plate to space the back plate from the diaphragm, the upper insulation layer having a flat plate shape to prevent sagging of the back plate.

A capacitive microelectromechanical device is provided. The capacitive microelectromechanical device includes a semiconductor substrate, a support structure, an electrode element, a spring element, and a seismic mass. The support structure, for example, a pole, suspension or a post, is fixedly connected to the semiconductor substrate, which may comprise silicon. The electrode element is fixedly connected to the support structure. Moreover, the seismic mass is connected over the spring element to the support structure so that the seismic mass is displaceable, deflectable or movable with respect to the electrode element. Moreover, the seismic mass and the electrode element form a capacitor having a capacitance which depends on a displacement between the seismic mass and the electrode element.

A capacitive microelectromechanical device is provided. The capacitive microelectromechanical device includes a semiconductor substrate, a support structure, an electrode element, a spring element, and a seismic mass. The support structure, for example, a pole, suspension or a post, is fixedly connected to the semiconductor substrate, which may comprise silicon. The electrode element is fixedly connected to the support structure. Moreover, the seismic mass is connected over the spring element to the support structure so that the seismic mass is displaceable, deflectable or movable with respect to the electrode element. Moreover, the seismic mass and the electrode element form a capacitor having a capacitance which depends on a displacement between the seismic mass and the electrode element.

A microstructure for use in a micro electro-mechanical device comprises a substrate having a top surface and a rear surface and a thin-film structure arranged at the top surface of the substrate. The thin-film structure comprises a raised portion spaced from the substrate, a lower portion of the thin-film structure, which is in mechanical contact with the substrate, at least one protruding portion, the protruding portion being hollow and having at least one sidewall and a bottom part and the protruding portion mechanically connecting the raised portion to the substrate via the bottom part, and at least one further sidewall of the thin-film structure at a distance to the at least one protruding portion, wherein the further sidewall mechanically connects the lower portion with the raised portion of the thin-film structure.

In an embodiment, a pressure sensor module includes a base electrode surrounding at least a part of a bottom electrode, an anchor arrangement on top of the base electrode including at least two electrically conductive walls that both surround at least the part of the bottom electrode and an electrically conductive layer that covers at least the bottom electrode and the anchor arrangement such that a cavity is formed between the bottom electrode, the anchor arrangement and the electrically conductive layer, wherein, on at least one side of the cavity, a proportionate area of the electrically conductive walls in a cross section extending from a surface of an inner wall of the anchor arrangement facing the cavity to a surface of an outermost wall of the anchor arrangement facing away from the cavity in a plane parallel to a plane of the bottom electrode is equal to or less than 10%.

A micro-device structure comprises a source substrate having a sacrificial layer comprising a sacrificial portion adjacent to an anchor portion, a micro-device disposed completely over the sacrificial portion, the micro-device having a top side opposite the sacrificial portion and a bottom side adjacent to the sacrificial portion and comprising an etch hole that extends through the micro-device from the top side to the bottom side, and a tether that physically connects the micro-device to the anchor portion. A micro-device structure comprises a micro-device disposed on a target substrate. Micro-devices can be any one or more of an antenna, a micro-heater, a power device, a MEMs device, and a micro-fluidic reservoir.

A device includes a substrate, a routing conductive line over the substrate, a dielectric layer over the routing conductive line, and an etch stop layer over the dielectric layer. A Micro-Electro-Mechanical System (MEMS) device has a portion over the etch stop layer. A contact plug penetrates through the etch stop layer and the dielectric layer. The contact plug connects the portion of the MEMS device to the routing conductive line. An escort ring is disposed over the etch stop layer and under the MEMS device, wherein the escort ring encircles the contact plug.

A microelectromechanical system (MEMS) structure includes at least first and second metal vias. Each of the first and second metal vias includes a respective planar metal layer having a first thickness and a respective post formed from the planar metal layer. The post has a sidewall, and the sidewall has a second thickness greater than 14% of the first thickness.

A pressure sensor module comprises a base electrode surrounding at least a part of a bottom electrode, and an anchor arrangement on top of the base electrode comprising at least two electrically conductive walls that both surround at least a part of the bottom electrode. The pressure sensor module further comprises an electrically conductive layer that covers at least the bottom electrode and the anchor arrangement such that a cavity is formed between the bottom electrode, the anchor arrangement and the electrically conductive layer. The proportionate area of the electrically conductive walls in a cross section extending from the surface of the inner wall of the anchor arrangement facing the cavity to the surface of the outermost wall of the anchor arrangement facing away from the cavity in a plane parallel to the plane of the bottom electrode is equal to or less than 10%.