A semiconductor package structure includes a die paddle, a plurality of leads, an electronic component and a package body. Each of the plurality of leads is separated from the die paddle and has an inner side surface facing the die paddle. The electronic component is disposed on the die paddle. The package body covers the die paddle, the plurality of leads and the electronic component. The package body is in direct contact with a bottom surface of the die paddle and the inner side surface of the plurality of leads.

In some embodiments, a sensor is provided. The sensor includes a microelectromechanical systems (MEMS) substrate disposed over an integrated chip (IC), where the IC defines a lower portion of a first cavity and a lower portion of a second cavity, and where the first cavity has a first operating pressure different than an operating pressure of the second cavity. A cap substrate is disposed over the MEMS substrate, where a first pair of sidewalls of the cap substrate partially define an upper portion of the first cavity, and a second pair of sidewalls of the cap substrate partially define an upper portion of the second cavity. A sensor area comprising a movable portion of the MEMS substrate and a dummy area comprising a fixed portion of the MEMS substrate are both disposed in the first cavity. A pressure enhancement structure is disposed in the dummy area.

The present publication discloses a micromechanical structure including at least one active element, the micromechanical structure comprising a substrate, at least one layer formed on the substrate forming the at least part of the at least one active element, mechanical contact areas through which the micromechanical structure can be connected to other structures like printed circuit boards and like. In accordance with the invention the micromechanical structure includes weakenings like trenches around the mechanical contact areas for eliminating the thermal mismatch between the active element of the micromechanical structure and the other structures.

The invention relates to a method for fabricating a detection device, comprising the following steps: producing thermal detectors and an encapsulating structure by way of mineral sacrificial layers; partially removing the mineral sacrificial layers, by wet chemical etching in an acid medium, so as to free the thermal detectors and to obtain a peripheral wall, and to free an upper portion of the encapsulating thin layer; the peripheral wall then having a lateral recess resulting in a vertical enlargement of the cavity, between the readout substrate and the upper portion, this lateral recess defining an intermediate area; producing reinforcing pillars, arranged in the intermediate area around the matrix-array of thermal detectors.

A cavity type semiconductor package with a substrate and a cap is disclosed. The semiconductor package includes a first semiconductor die coupled to the substrate and a layer of flexible material on a surface of the cap. A trace is on the layer of flexible material. The cap is coupled to the substrate with the layer of flexible material and the trace between the cap and the substrate. A second semiconductor die is coupled to the layer of flexible material and the trace on the cap. The cap further includes an aperture to expose the second semiconductor die to the ambient environment. The layer of flexible material absorbs stress during operation cycles of the package induced by the different coefficient of thermal expansions of the cap and the substrate to reduce the likelihood of separation of the cap from the substrate.

A microelectromechanical system (MEMS) sensor package includes a laminate that provides physical support and electrical connection to a MEMS sensor. A resin layer is embedded within an opening of the laminate and a MEMS support layer is embedded within the opening by the resin layer. A MEMS structure of the MEMS sensor is located on the upper surface of the MEMS support layer.

A semiconductor device package includes a redistribution layer structure, a lid, a sensing component and an encapsulant. The lid is disposed on the redistribution layer structure and defines a cavity together with the redistribution layer structure. The sensing component is disposed in the cavity. The encapsulant surrounds the lid.

A method for manufacturing a micromechanical sensor, in particular a pressure difference sensor, including creating a functional layer on a substrate; creating at least one rear side trench area proceeding from a rear side of a substrate, for exposing the functional layer for a sensor diaphragm; creating at least one front side trench area for forming at least one supporting structure, in particular an energy storage structure, preferably in the form of a spring structure, in the substrate as a mounting for the sensor diaphragm; and at least partially filling at least a front side trench area with a gel.

A sensor can comprise a sensor die with a first sensor surface and a second sensor surface opposite to the first sensor surface. The sensor can further comprise a die pad component with a first pad surface and a second pad surface opposite to the first pad surface, wherein the sensor die is vertically stacked with the die pad component, with the second sensor surface oriented toward the first pad surface. The sensor can further comprise a lead frame component with a first frame surface and a second frame surface opposite to the first frame surface, the die pad component is vertically stacked with the lead frame component, wherein the second pad surface is oriented toward the first frame surface, the second pad surface is isolated from the second frame surface, and the lead frame component is electrically connected to the sensor die.

A packaged micro-electro-mechanical system (MEMS) device (100) comprises a circuitry chip (101) attached to the pad (110) of a substrate with leads (111), and a MEMS (150) vertically attached to the chip surface by a layer (140) of low modulus silicone compound. On the chip surface, the MEMS device is surrounded by a polyimide ring (130) with a surface phobic to silicone compounds. A dome-shaped glob (160) of cured low modulus silicone material covers the MEMS and the MEMS terminal bonding wire spans (180); the glob is restricted to the chip surface area inside the polyimide ring and has a surface non-adhesive to epoxy-based molding compounds. A package (190) of polymeric molding compound encapsulates the vertical assembly of the glob embedding the MEMS, the circuitry chip, and portions of the substrate; the molding compound is non-adhering to the glob surface yet adhering to all other surfaces.