The present invention relates to a method for producing an electrode material for a battery electrode, in particular for a lithium-ion battery, wherein said electrode material comprises nanostructured silicon carbide, comprising the steps of: a) providing a mixture including a silicon source, a carbon source and a dopant, wherein at least the silicon source and the carbon source are present in common in particles of a solid granulate; b) treating the mixture provided in step a) at a temperature in the range from ≧1400° C. to ≦2000° C., in particular in a range from ≧1650° C. to ≦1850° C., wherein step b) is carried out in a reactor that has a depositing surface the temperature of which relative to at least one other inner reactor surface is reduced. In summary, a method described above enables to combine a simple and cost-efficient production with a high cycle stability.

The invention discloses a method for producing silicon carbide from waste circuit board cracking residue, belongs to the field of comprehensive utilization of waste circuit board cracking products, and particularly relates to a method for high-valued utilization of non-metal components in waste circuit board cracking residue. The method mainly comprises the following steps: rolling and crushing, vibration sorting, ultrafine pulverization and electro-separation, quantitative batching, microwave sintering and discharging and grading. Compared with the prior art, rolling crushing is adopted to replace traditional shearing crushing, microwave sintering is adopted to replace a traditional Acheson smelting furnace, the effects of being easy to operate, saving energy and reducing consumption are achieved, the production efficiency is greatly improved, and the production cost is reduced. A brand-new method for obtaining high-purity silicon carbide by partially replacing anthracite and quartz sand with cracked coke and silicon dioxide in waste circuit board light plates or epoxy resin cracking residues is adopted, and high-value utilization of waste resources is achieved. The method has the characteristics of simple and feasible process, low manufacturing cost and wide adaptability, and is beneficial to improving the economic benefit and social benefit of enterprise production.

The invention discloses a method for producing silicon carbide from waste circuit board cracking residue, belongs to the field of comprehensive utilization of waste circuit board cracking products, and particularly relates to a method for high-valued utilization of non-metal components in waste circuit board cracking residue. The method mainly comprises the following steps: rolling and crushing, vibration sorting, ultrafine pulverization and electro-separation, quantitative batching, microwave sintering and discharging and grading. Compared with the prior art, rolling crushing is adopted to replace traditional shearing crushing, microwave sintering is adopted to replace a traditional Acheson smelting furnace, the effects of being easy to operate, saving energy and reducing consumption are achieved, the production efficiency is greatly improved, and the production cost is reduced. A brand-new method for obtaining high-purity silicon carbide by partially replacing anthracite and quartz sand with cracked coke and silicon dioxide in waste circuit board light plates or epoxy resin cracking residues is adopted, and high-value utilization of waste resources is achieved. The method has the characteristics of simple and feasible process, low manufacturing cost and wide adaptability, and is beneficial to improving the economic benefit and social benefit of enterprise production.

A process of producing silicon-containing materials includes converting a gas to a superheated state in which it is at least partly in plasma form, and contacting the superheated gas with a silicon-containing first starting material to form a mixture including the gas and silicon, wherein the silicon-containing materials are produced by adding to the gas or the mixture a second starting material that can enter into a chemical reaction directly with the silicon in the mixture, or breaks down thermally on contact with the superheated gas and/or the mixture, and steps a. and b. are effected spatially separately from one another.

A production method for a composite material, which includes a porous substrate and a silicon carbide film formed on a surface of a material forming the porous substrate, includes causing a silicon source containing a silicon atom, a chlorine source containing a chlorine atom, and a carbon source containing a carbon atom to react with each other to form the silicon carbide film on the surface of the material forming the porous substrate.

A silicon carbide wafer and a method of fabricating the same are provided. In the silicon carbide wafer, a ratio (V:N) of a vanadium concentration to a nitrogen concentration is in a range of 2:1 to 10:1, and a portion of the silicon carbide wafer having a resistivity greater than 10.sup.12 Ω.Math.cm accounts for more than 85% of an entire wafer area of the silicon carbide wafer.

The present invention relates to a method for producing an electrode material for a battery electrode, in particular for a lithium-ion battery, wherein said electrode material comprises nanostructured silicon carbide, comprising the steps of: a) providing a mixture including a silicon source, a carbon source and a dopant, wherein at least the silicon source and the carbon source are present in common in particles of a solid granulate; b) treating the mixture provided in step a) at a temperature in the range from ≥1400° C. to ≤2000° C., in particular in a range from ≥1650° C. to ≤1850° C., wherein step b) is carried out in a reactor that has a depositing surface the temperature of which relative to at least one other inner reactor surface is reduced. In summary, a method described above enables to combine a simple and cost-efficient production with a high cycle stability.

The present invention relates to a method for producing an electrode material for a battery electrode, in particular for a lithium-ion battery, wherein said electrode material comprises nanostructured silicon carbide, comprising the steps of: a) providing a mixture including a silicon source, a carbon source and a dopant, wherein at least the silicon source and the carbon source are present in common in particles of a solid granulate; b) treating the mixture provided in step a) at a temperature in the range from ≥1400° C. to ≤2000° C., in particular in a range from ≥1650° C. to ≤1850° C., wherein step b) is carried out in a reactor that has a depositing surface the temperature of which relative to at least one other inner reactor surface is reduced. In summary, a method described above enables to combine a simple and cost-efficient production with a high cycle stability.

Provided are a high quality silicon carbide seed crystal, a silicon carbide crystal, a silicon carbide substrate, and a preparation method therefor. A high quality silicon carbide seed crystal is prepared, the dopant concentrations of a thermal insulation material, a graphite crucible, and a silicon carbide powder material are controlled, a specific crystal growth process and a wafer machining means are integrated, and a high quality silicon carbide substrate is obtained. The obtained silicon carbide substrate has a high crystalline quality and an extremely low amount of micropipes, screw dislocation density, and compound dislocation density; said substrate also has an extremely low p-type dopant concentration, exhibits superior electrical performance, and has a high surface quality.

Provided are a high quality silicon carbide seed crystal, a silicon carbide crystal, a silicon carbide substrate, and a preparation method therefor. A high quality silicon carbide seed crystal is prepared, the dopant concentrations of a thermal insulation material, a graphite crucible, and a silicon carbide powder material are controlled, a specific crystal growth process and a wafer machining means are integrated, and a high quality silicon carbide substrate is obtained. The obtained silicon carbide substrate has a high crystalline quality and an extremely low amount of micropipes, screw dislocation density, and compound dislocation density; said substrate also has an extremely low p-type dopant concentration, exhibits superior electrical performance, and has a high surface quality.