The disclosure relates to a device for continuously producing qualitatively high-grade crystalline silicon carbide, in particular in the form of nanocrystalline fibre.

Disclosed is a method for synthesizing two-dimensional (2D) silicon carbide and other materials. The method includes the use of hexagonal SiC precursor in a wet exfoliation technique. The method may also include synthesizing two-dimensional (2D) silicon carbide by a chemical vapor deposition method, or a combination of a liquid exfoliation technique and a chemical vapor deposition method.

Disclosed is a method for synthesizing two-dimensional (2D) silicon carbide and other materials. The method includes the use of hexagonal SiC precursor in a wet exfoliation technique. The method may also include synthesizing two-dimensional (2D) silicon carbide by a chemical vapor deposition method, or a combination of a liquid exfoliation technique and a chemical vapor deposition method.

A method for removing boron is provided, which includes (a) mixing a carbon source material and a silicon source material in a chamber to form a solid state mixture, (b) heating the solid state mixture to a temperature of 1000° C. to 1600° C., and adjusting the pressure of the chamber to 1 torr to 100 torr. The method also includes (c) conducting a gas mixture of a first carrier gas and water vapor into the chamber to remove boron from the solid state mixture, and (d) conducting a second carrier gas into the chamber.

A method for removing boron is provided, which includes (a) mixing a carbon source material and a silicon source material in a chamber to form a solid state mixture, (b) heating the solid state mixture to a temperature of 1000° C. to 1600° C., and adjusting the pressure of the chamber to 1 torr to 100 torr. The method also includes (c) conducting a gas mixture of a first carrier gas and water vapor into the chamber to remove boron from the solid state mixture, and (d) conducting a second carrier gas into the chamber.

A process for production of silicon carbide and hydrogen is described, involving reacting hydrocarbon gas in the presence of silicon particles to form particulate silicon carbide and hydrogen, wherein the silicon particles, in addition to being reactants, also act as a catalyst for the reaction. Apparatus for carrying out such process is also described. The disclosed process and apparatus enable production of particulate silicon carbide at high purity, e.g., 5N (99.999%) and higher purity, as well as high purity hydrogen.

A process for production of silicon carbide and hydrogen is described, involving reacting hydrocarbon gas in the presence of silicon particles to form particulate silicon carbide and hydrogen, wherein the silicon particles, in addition to being reactants, also act as a catalyst for the reaction. Apparatus for carrying out such process is also described. The disclosed process and apparatus enable production of particulate silicon carbide at high purity, e.g., 5N (99.999%) and higher purity, as well as high purity hydrogen.

A SiC powder containing 70% by mass or more of a β-SiC, wherein in a volume-based cumulative particle size distribution measured by a laser diffraction method, a D50 is 8 to 35 μm and a D10 is 5 μm or more.

The invention discloses a method for producing silicon carbide from waste circuit board cracking residue, belongs to the field of comprehensive utilization of waste circuit board cracking products, and particularly relates to a method for high-valued utilization of non-metal components in waste circuit board cracking residue. The method mainly comprises the following steps: rolling and crushing, vibration sorting, ultrafine pulverization and electro-separation, quantitative batching, microwave sintering and discharging and grading. Compared with the prior art, rolling crushing is adopted to replace traditional shearing crushing, microwave sintering is adopted to replace a traditional Acheson smelting furnace, the effects of being easy to operate, saving energy and reducing consumption are achieved, the production efficiency is greatly improved, and the production cost is reduced. A brand-new method for obtaining high-purity silicon carbide by partially replacing anthracite and quartz sand with cracked coke and silicon dioxide in waste circuit board light plates or epoxy resin cracking residues is adopted, and high-value utilization of waste resources is achieved. The method has the characteristics of simple and feasible process, low manufacturing cost and wide adaptability, and is beneficial to improving the economic benefit and social benefit of enterprise production.

The invention discloses a method for producing silicon carbide from waste circuit board cracking residue, belongs to the field of comprehensive utilization of waste circuit board cracking products, and particularly relates to a method for high-valued utilization of non-metal components in waste circuit board cracking residue. The method mainly comprises the following steps: rolling and crushing, vibration sorting, ultrafine pulverization and electro-separation, quantitative batching, microwave sintering and discharging and grading. Compared with the prior art, rolling crushing is adopted to replace traditional shearing crushing, microwave sintering is adopted to replace a traditional Acheson smelting furnace, the effects of being easy to operate, saving energy and reducing consumption are achieved, the production efficiency is greatly improved, and the production cost is reduced. A brand-new method for obtaining high-purity silicon carbide by partially replacing anthracite and quartz sand with cracked coke and silicon dioxide in waste circuit board light plates or epoxy resin cracking residues is adopted, and high-value utilization of waste resources is achieved. The method has the characteristics of simple and feasible process, low manufacturing cost and wide adaptability, and is beneficial to improving the economic benefit and social benefit of enterprise production.