A compound of formula (I):

##STR00001##

wherein p is at least 1, n is at least 1 and less than or equal to p; Ar is a polycyclic aromatic moiety, R.sup.1 is hydrogen or an optionally substituted hydrocarbyl group and each of R.sup.2, R.sup.3 and R.sup.4 is independently an optionally substituted hydrocarbyl group, provided that at least one of R.sup.2, R.sup.3 and R.sup.4 has at least 6 carbon atoms.

Crystalline molecular framework:small molecule compounds. The molecular framework is formed from guanidinium cations and organosulfonate anions and the guanidinium cations and organosulfonate anions are associated via one or more hydrogen bond. The small molecule(s) is/are encapsulated by the molecular framework. Methods for making crystalline molecular framework:small molecule compounds may include combining guanidinium cations, organosulfonate anions, and small molecules in a single step. The crystalline molecular framework:small molecule compounds can be used to determine the structure of the small molecule(s).

The present invention provides a resist composition, including: (A) a sulfonium salt containing an anion and a cation, the cation including a partial structure shown by the following general formula (A1); and (B) a polymer compound containing a repeating unit shown by the following general formula (B1). The present invention provides a resist composition that causes few defects and is excellent in lithography performance, having regulated acid diffusion, in photolithography using a high energy beam as a light source, and a resist patterning process using this resist composition.

##STR00001##

The present invention provides a resist composition, including: (A) a sulfonium salt containing an anion and a cation, the cation including a partial structure shown by the following general formula (A1); and (B) a polymer compound containing a repeating unit shown by the following general formula (B1). The present invention provides a resist composition that causes few defects and is excellent in lithography performance, having regulated acid diffusion, in photolithography using a high energy beam as a light source, and a resist patterning process using this resist composition.

##STR00001##

Disclosed is an edge-functionalized graphitic material manufactured by using a mechanochemical process. The edge-functionalized graphitic material is manufactured by pulverizing graphite in the presence of a variety of atmospheric agents in the form of gas phase, liquid phase, or solid phase. The edge-functionalized graphitic material, which is a precursor applicable into various fields, is expected to replace the prior art oxidized graphite.