An object of the present invention is to provide a treatment liquid for a semiconductor device, which is excellent in removal performance for residues present on a substrate, and to provide a substrate washing method using the treatment liquid.

The treatment liquid of the present invention is a treatment liquid for a semiconductor device, which includes water, a basic compound, hexylene glycol, and a compound A that is at least one kind selected from the group consisting of isobutene, (E)-2-methyl-1,3-pentadiene, 4-methyl-1,3-pentadiene, 2,2,4-trimethyloxetane, 4-methyl-3-penten-2-ol, and 2,4,4,6-tetramethyl-1,3-dioxane.

A cleaning liquid composition is provided. More particularly, a cleaning liquid composition includes a transition metal compound represented by Chemical Formula 1 (see the detailed description of the present invention); and a hydrocarbon-based solvent, and a cleaning method of a polymerization apparatus using the same.

Compositions or finishing solutions configured to remove unwanted material, such as uncured material or resin, from additively manufactured objects are disclosed herein, in one example, the finishing solution includes a first glycol ether and a second glycol ether and/or a high flash point hydrocarbon, wherein the finishing solution has a flash point of at least 93.3° C. In alternative examples, the finishing solution may also include a third glycol ether, a high flash point alcohol, and/or an acetate of a glycol ether.

Provided herein is a cleaning composition including: from 20 to 90% by weight of dimethyl sulfoxide, from 5 to 30% by weight of at least one mineral oil (M), and from 5 to 50% by weight of at least one bipolar organic solvent (L). The ranges of proportions indicated are in each case based on the total weight of the cleaning composition. Also provided herein is a method of cleaning components by employing the cleaning composition, and also the cleaned components themselves.

A cleaning liquid composition is provided. More particularly, a cleaning liquid composition includes a transition metal compound represented by Chemical Formula 1 (see the detailed description of the present invention); and a hydrocarbon-based solvent, and a cleaning method of a polymerization apparatus using the same.

A process for flushing an oligomerization reactor is described, including flushing the oligomerization reactor with a flushing medium comprising C.sub.6 linear alpha olefins, C.sub.8 linear alpha olefins, C.sub.10 linear alpha olefins, or a combination including at least one of the foregoing, to provide a purge stream comprising the C.sub.6 linear alpha olefins, C.sub.8 linear alpha olefins, C.sub.10 linear alpha olefins, or a combination including at least one of the foregoing, and a polymer byproduct of an oligomerization reaction. A process for the oligomerization of an olefin is also described, wherein the process includes oligomerizing the olefin in the reactor to form a reaction product stream comprising linear alpha olefins, and subsequently flushing the oligomerization reactor according to the process disclosed herein.

Disclose herein is a composition comprising a hydrocarbon solvent; an aromatic solvent; a methylated siloxane; and a surfactant. Also disclosed is a method of preparing an emulsion for cleaning purposes comprising mixing a solution at a rate of greater than 500 rpm for at least two hours, wherein the solution comprises a hydrocarbon solvent, an aromatic solvent, a methylated siloxane, and a surfactant. In addition, disclosed herein is a method of cleaning rollers, plates, or blankets of a printing machine with a cleaning mixture, the method comprising contacting the rollers or blankets with the cleaning mixture, wherein the cleaning mixture comprises a hydrocarbon solvent, an aromatic solvent, a methylated siloxane, and a surfactant.

Provided herein is a cleaning composition including: from 20 to 90% by weight of dimethyl sulfoxide, from 5 to 30% by weight of at least one mineral oil (M), and from 5 to 50% by weight of at least one bipolar organic solvent (L). The ranges of proportions indicated are in each case based on the total weight of the cleaning composition. Also provided herein is a method of cleaning components by employing the cleaning composition, and also the cleaned components themselves.

An object of the present invention is to provide a treatment liquid for a semiconductor device, which is excellent in removal performance for residues present on a substrate, and to provide a substrate washing method using the treatment liquid. The treatment liquid of the present invention is a treatment liquid for a semiconductor device, which includes water, a basic compound, hexylene glycol, and a compound A that is at least one kind selected from the group consisting of isobutene, (E)-2-methyl-1,3-pentadiene, 4-methyl-1,3-pentadiene, 2,2,4-trimethyloxetane, 4-methyl-3-penten-2-ol, and 2,4,4,6-tetramethyl-1,3-dioxane.