A method of fabricating a magnetically-controlled graphene-based micro-/nano-motor includes: (a) mixing FeCl.sub.3 crystal powder with deionized water to obtain a FeCl.sub.3 solution; (b) completely immersing a carbon-based microsphere in the FeCl.sub.3 solution; transferring the carbon-based microsphere from the FeCl.sub.3 solution followed by heating to allow crystallization of FeCl.sub.3 on the surface of the carbon-based microsphere to obtain a FeCl.sub.3-carbon-based microsphere; (c) heating the FeCl.sub.3-carbon-based microsphere in a vacuum chamber until there is no moisture in the vacuum chamber; continuously removing gas in the vacuum chamber and introducing oxygen; and treating the FeCl.sub.3-carbon-based microsphere with a laser in an oxygen-enriched environment to obtain the magnetically controlled graphene-based micro-/nano-motor. A magnetically-controlled graphene-based micro-/nano-motor is further provided.

The invention relates to the manufacturing method of high performance electro-chromic devices containing transition metal oxide based compounds, wherein it comprises the steps of enlarging of the metal contact with Pt (Platinum) (1) sputtering method on one edge of the 80-150 nm thick Indium-Tin oxide alloy (ITO) (2), which was previously enlarged on the glass (3) by the sputter method, growing vertical nano-wall structures at 15-25 mTorr, 300-500° C. substrate temperature and at 3-45 minutes intervals on glass (3) with sputter method, by using transition metal chalcogen targets on previously enlarged ITO (2) with a thickness of 80-150 nm, oxidizing the grown structures in the oxidizing furnace for 10-60 minutes under oxygen gas in the temperature range 300-450° C., preparing the electro-chromic device by placing a counter glass/ITO (80-150 nm) in propylene carbonate (PC) to face 1 Mole/Liter Lithium perchlorate (LiClO4) ion-conducting electrolyte (6) with a 0.5-1 mm distance between them and closing it.

The present disclosure relates generally to thin metal films having an ultra-flat surface and methods of their preparation. In particular, the ultra-flat thin metal films comprise FCC metals. Preferably, the thin metal films are attached to a substrate. Preferred substrates comprise chalcogenides and dichalcogenides. Beneficially, the thin metal films described herein can be prepared at ambient temperatures.

A film forming apparatus has a process chamber and a processing unit provided in the process chamber and forming adhesive film. The surface of the inner walls of the process chamber is formed of a material having a large getter effect on gas or water (H.sub.2O) remaining in the process chamber.

A gold sputtering target is made of gold and inevitable impurities, and has a surface to be sputtered. In the gold sputtering target, an average value of Vickers hardness is 40 or more and 60 or less, and an average crystal grain size is 15 μm or more and 200 μm or less. A {110} plane of gold is preferentially oriented at the surface to be sputtered.

A film forming method includes: preparing a substrate that includes a base substrate and a first conductive film that is formed on the base substrate; forming, on the first conductive film, a composite layer that includes layers of graphene and includes, as dopant atoms, a transition metal from 4th period to 6th period in a periodic table, excluding lanthanoids, between the layers of graphene; and forming, on the composite layer, a second conductive film which is electrically connected to the first conductive film via the composite layer.

To appropriately transmit far-infrared rays while ensuring design. A far-infrared ray transmission member (20) includes a base material (30) configured to transmit far-infrared rays, and a functional film (31) formed on the base material (30). Dispersion of reflectances with respect to pieces of light at a wavelength of 360 nm to 830 nm in increments of 1 nm is equal to or smaller than 30, a reflectance with respect to visible light defined by JIS R3106 is equal to or lower than 25%, and an average transmittance with respect to light at a wavelength of 8 μm to 12 μm is equal to or higher than 50%.

The present invention relates to a method for producing a multilayer film comprising aluminum, chromium, oxygen and nitrogen, in a vacuum coating chamber, the multilayer film comprising layers of type A and layers of type B deposited alternate one of each other, wherein during deposition of the multilayer film at least one target comprising aluminum and chromium is operated as cathode by means of a PVD technique and used in this manner as material source for supplying aluminum and chromium, and an oxygen gas flow and a nitrogen gas flow are introduced as reactive gases in the vacuum chamber for reacting with aluminum and chromium, thereby supplying oxygen and nitrogen for forming the multilayer film, characterized in that: —The A layers are deposited as oxynitride layers of Al—Cr—O—N by using nitrogen and oxygen as reactive gas at the same time, —The B layers are deposited as nitride layers of Al—Cr—N by reducing the oxygen gas flow and by increasing the nitrogen gas flow in order to use only nitrogen as reactive gas for the formation of the Al—Cr—N layer, and wherein the relation between oxygen content and nitrogen content in the multilayer film correspond to a ratio in atomic percentage having a value between and including 1.8 and 4.

A material includes a transparent substrate coated with a stack including at least one functional metal layer based on silver and at least two dielectric coatings, each dielectric coating including at least one dielectric layer, in such a way that each functional metal layer is positioned between two dielectric coatings, wherein the stack includes a layer based on silicon oxide having a thickness of greater than or equal to 12 nm located directly in contact with the substrate.

Provided is an yttrium ingot from which an yttrium sputtering target that produces a reduced number of particles can be obtained, and an yttrium sputtering target that has high plasma resistance and a low resistance that enables realization of a high film deposition rate can be obtained.

An yttrium ingot, wherein the yttrium ingot has a fluorine atom content of less than or equal to 10 wt %; in an instance where the yttrium ingot constitutes a target, a sputtering surface of the target has a surface roughness of 10 nm or greater and 2 μm or less; in the yttrium ingot, the number of pores having a diameter of greater than or equal to 100 μm is fewer than or equal to 0.1/cm.sup.2; and the yttrium ingot has a relative density of greater than or equal to 96%.