A process for depositing a coating on short fibres of carbon or silicon carbide from a coating precursor, the short fibres having a length of between 50 μm and 5 mm, the process including at least heating the short fibres by placing a mixture including the fibres and a liquid phase of the coating precursor in a microwave field so as to bring the surface of the fibres to a temperature allowing the coating on the fibres from the coating precursor to be formed by calefaction.

The instant disclosure is related to the growth of carbon-based nanostructures and associated systems and products. Certain embodiments are related to carbon-based nanostructure growth using active growth materials comprises at least two components that are capable of forming a eutectic composition with each other. In some embodiments, the growth of carbon-based nanostructures is performed using active growth materials comprising at least two types of cations.

A method for forming a doped layer is disclosed. The doped layer may be used in a NMOS or a silicon germanium application. The doped layer may be created using an n-type halide species in a n-type dopant application, for example.

So as to perform a vacuum surface treatment on a workpiece at a predetermined temperature, which is different from a temperature to which the surface is exposed during the vacuum surface treatment, the workpiece is conveyed in a conveyance direction along one or more than one station group including one or more than one tempering station and of a single treatment station.

Embodiments of the present disclosure generally relate to protective coatings on substrates and methods for depositing the protective coatings. In one or more embodiments, a method of forming a protective coating on a substrate includes depositing a chromium oxide layer containing amorphous chromium oxide on a surface of the substrate during a first vapor deposition process and heating the substrate containing the chromium oxide layer comprising the amorphous chromium oxide to convert at least a portion of the amorphous chromium oxide to crystalline chromium oxide during a first annealing process. The method also includes depositing an aluminum oxide layer containing amorphous aluminum oxide on the chromium oxide layer during a second vapor deposition process and heating the substrate containing the aluminum oxide layer disposed on the chromium oxide layer to convert at least a portion of the amorphous aluminum oxide to crystalline aluminum oxide during a second annealing process.

A vaporization supply device includes a vaporizer for heating and vaporizing a liquid raw material L, a flow rate controller for controlling a flow rate of the gas supplied from the vaporizer to a gas supply destination, and a controller for heating the inside of the vaporizer to obtain a necessary gas flow rate, and performing a feedback control so that a pressure becomes equal to or higher than a predetermined value. The controller is configured so as to stop the feedback control at the time point when the flow rate control by the flow rate controller starts, then heat the liquid raw material by an amount of heat provided to the vaporizer more than the heat that has already been provided immediately before the feedback control ends, and change to the feedback control after a predetermined time has elapsed from the time point when the flow rate control by the flow rate controller starts.

Provided is a method for making a porous graphene layer of a thickness of less than 100 nm, including the following steps: providing a catalytically active substrate, said catalytically active substrate on its surface being provided with a plurality of catalytically inactive domains having a size essentially corresponding to the size of the pores in the resultant porous graphene layer; and chemical vapour deposition and formation of the porous graphene layer on the surface of the catalytically active substrate;. The catalytically active substrate is a copper-nickel alloy substrate with a copper content in the range of 98 to less than 99.96% by weight and a nickel content in the range of more than 0.04-2% by weight, the copper and nickel contents complementing to 100% by weight of the catalytically active substrate.

A method and apparatus for forming a super-lattice structure on a substrate is described herein. The super-lattice structure includes a plurality of silicon-germanium layers and a plurality of silicon layers disposed in a stacked pattern. The methods described herein produce a super-lattice structure with transition width of less than about 1.4 nm between each of the silicon-germanium layers and an adjacent silicon layer. The methods described herein include flowing one or a combination of a silicon containing gas, a germanium containing gas, and a halogenated species.

There is provided a film forming method for forming a tungsten film, comprising: preparing a substrate; and forming a tungsten film on the substrate. A chlorine-containing tungsten film whose film stress is adjusted by chlorine concentration in the film is formed as at least a part of the tungsten film.

Systems and method for producing graphene on a substrate are described. Certain types of exemplar systems include lateral arrangements of a substrate gas scavenging environment and an annealing environment. Certain other types of exemplar systems include lateral arrangements of a graphene producing environment and a cooling environment, which cools the graphene produced on the substrate. Yet other types of exemplar systems include lateral arrangements of a localized annealing environment, localized graphene producing environment and a localized cooling environment inside the same enclosure.

Certain type of exemplar methods for producing graphene on a substrate include scavenging a first portion of the substrate and preferably, contemporaneously annealing a second portion of the substrate. Certain other type of exemplar methods for producing graphene include novel annealing techniques and/or implementing temperature profiles and gas flow rate profiles that vary as a function of lateral distance and/or cooling graphene after producing it.