Provided in the present disclosure are a coating apparatus and an application thereof, being used for coating on the surface of a substrate, the coating apparatus comprises a feeding device and a device main body, wherein the feeding device is configured to communicate with the apparatus device main body, the feeding device comprises a gas feeding device and a liquid feeding device, the gas feeding device is in communication with the device main body and is used for transmitting a gaseous gas raw material to the device main body, the liquid feeding device is in communication with the device main body and is used for transmitting a liquid gasified gas raw material to the device main body, the device main body is used for preparing a thin film based on the gas raw material, and the same coating apparatus can be used for preparing various thin films or film layers with different properties or of different types on the surface of the substrate.

Methods to manufacture integrated circuits are described. Nanocrystalline diamond is used as a hard mask in place of amorphous carbon. Provided is a method of processing a substrate in which nanocrystalline diamond is used as a hard mask, wherein processing methods result in a smooth surface. The method involves two processing parts. Two separate nanocrystalline diamond recipes are combined—the first and second recipes are cycled to achieve a nanocrystalline diamond hard mask having high hardness, high modulus, and a smooth surface. In other embodiments, the first recipe is followed by an inert gas plasma smoothening process and then the first recipe is cycled to achieve a high hardness, a high modulus, and a smooth surface.

A non-planar chemical vapour deposition polycrystalline diamond body has a dome body having an apex and an outer periphery. The dome body has an average radius of curvature in a range of 4 mm to 25 mm and a maximum linear dimension at the outer periphery of the dome body of no more than 26 mm. The average radius of curvature is no less than 0.6 times the maximum linear dimension at the outer periphery. A method of fabricating the non-planar diamond body is also disclosed.

Described herein is a chemical vapor deposition (CVD) process for producing diamond, the process comprising: providing a CVD growth chamber containing a growth substrate; charging the CVD growth chamber with a gas mixture, the gas mixture comprising a carbon source gas; activating the gas mixture to facilitate growth of diamond on the growth substrate; and providing for a period of diamond growth during which the gas mixture is sealed within the CVD growth chamber.

Embodiments of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the embodiments described herein provide techniques for depositing nitrogen-doped diamond-like carbon films for patterning applications. In one or more embodiments, a method for processing a substrate includes flowing a deposition gas containing a hydrocarbon compound and a nitrogen dopant compound into a processing volume of a process chamber having a substrate positioned on an electrostatic chuck, and generating a plasma at or above the substrate by applying a first RF bias to the electrostatic chuck to deposit a nitrogen-doped diamond-like carbon film on the substrate. The nitrogen-doped diamond-like carbon film has a density of greater than 1.5 g/cc and a compressive stress of about −20 MPa to less than −600 MPa.

An ultra-fine nanocrystalline diamond precision cutting tool and a manufacturing method therefor. A diamond cutter is made of a thick self-supporting film of ultra-fine nanocrystalline diamond, the thick film having a thickness of 100-3000 microns, where 1 nanometer≤diamond grain size≤20 nanometers. In the manufacturing method, the growth of ultra-fine nanocrystalline diamond on a silicon substrate is accomplished by means of two steps of direct current hot cathode glow discharge chemical vapor deposition and hot filament chemical vapor deposition, then the silicon substrate is separated from the diamond to obtain a thick self-supporting film of ultra-fine nanocrystalline diamond, the thick self-supporting film of ultra-fine nanocrystalline diamond is laser cut and then welded to a cutter body, and then by means of edging, rough grinding and fine grinding, an ultra-fine nanocrystalline diamond precision cutting tool is obtained.

Methods to manufacture integrated circuits are described. Nanocrystalline diamond is used as a hard mask in place of amorphous carbon. Provided is a method of processing a substrate in which nanocrystalline diamond is used as a hard mask, wherein processing methods result in a smooth surface. The method involves two processing parts. Two separate nanocrystalline diamond recipes are combined—the first and second recipes are cycled to achieve a nanocrystalline diamond hard mask having high hardness, high modulus, and a smooth surface. In other embodiments, the first recipe is followed by an inert gas plasma smoothening process and then the first recipe is cycled to achieve a high hardness, a high modulus, and a smooth surface.

A plasma processing apparatus including a vacuum chamber comprising a conduit, a process chamber, and a first gas input port for introducing gas into the vacuum chamber, and a pump port for evacuating gas from the vacuum chamber. A magnetic core surrounds the conduit. An output of an RF power supply is electrically connected to the magnetic core. The RF power supply energizes the magnetic core, thereby forming a toroidal plasma loop discharge in the vacuum chamber. A platen that supports a workpiece during plasma processing is positioned in the process chamber.

Embodiments of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the embodiments described herein provide techniques for depositing high-density films for patterning applications. In one or more embodiments, a method of processing a substrate is provided and includes flowing a deposition gas containing a hydrocarbon compound and a dopant compound into a processing volume of a process chamber having a substrate positioned on an electrostatic chuck, where the processing volume is maintained at a pressure of about 0.5 mTorr to about 10 Torr. The method also includes generating a plasma at the substrate by applying a first RF bias to the electrostatic chuck to deposit a doped diamond-like carbon film on the substrate, where the doped diamond-like carbon film has a density of greater than 2 g/cc and a stress of less than −500 MPa.

Embodiments of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the embodiments described herein provide techniques for depositing nitrogen-doped diamond-like carbon films for patterning applications. In one or more embodiments, a method for processing a substrate includes flowing a deposition gas containing a hydrocarbon compound and a nitrogen dopant compound into a processing volume of a process chamber having a substrate positioned on an electrostatic chuck, and generating a plasma at or above the substrate by applying a first RF bias to the electrostatic chuck to deposit a nitrogen-doped diamond-like carbon film on the substrate. The nitrogen-doped diamond-like carbon film has a density of greater than 1.5 g/cc and a compressive stress of about −20 MPa to less than −600 MPa.