A multi-layer coating on an outer surface of a substrate includes a first layer applied directly to the outer surface of the substrate. The first layer includes diamond-like carbon (DLC) configured to mitigate metal whisker formation. A second layer is applied on a top surface of the first layer. The second layer is a conformal coating that includes a second material configured to bind to the top surface of the first layer and fill any microfractures that may form in the first layer. Optionally, a third layer is applied on a top surface of the second layer and includes DLC configured to protect the second layer from oxidation and degradation.

An apparatus for fabricating diamond by carbon assembly, which comprises:

a) a hydrocarbon radical generator in operable connection with
b) a mass flow conduit extending from the hydrocarbon radical generator in a) to an interface and into a primary magnetic accelerator containing one or more electromagnets in operable connection with
c) a diamond fabrication reactor comprising a diamond forming deposition substrate.

Also disclosed is a method for fabricating diamond by shockwaves using the disclosed apparatus.

Embodiments of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the embodiments described herein provide methods for producing reduced-stress diamond-like carbon films for patterning applications. In one or more embodiments, a method includes flowing a deposition gas containing a hydrocarbon compound into a processing volume of a process chamber having a substrate positioned on an electrostatic chuck and generating a plasma above the substrate in the processing volume by applying a first RF bias to the electrostatic chuck to deposit a stressed diamond-like carbon film on the substrate. The stressed diamond-like carbon film has a compressive stress of −500 MPa or greater. The method further includes heating the stressed diamond-like carbon film to produce a reduced-stress diamond-like carbon film during a thermal annealing process. The reduced-stress diamond-like carbon film has a compressive stress of less than −500 MPa.

Embodiments of the present disclosure provide a film and a forming method thereof. The forming method includes: providing a base; forming a diamond-like carbon film on the base, where the DLC film has carbon-hydrogen chemical bonds; and performing photocatalytic treatment on the DLC film, to break at least some of the carbon-hydrogen chemical bonds and reduce content of hydrogen elements in the DLC film.

A composite structure for use as a constituent of a mounting device, wherein the composite structure comprises an electrically conductive carrier, an intermediate layer comprising adhesion promoting material and being arranged on the electrically conductive carrier, and a thermally conductive and electrically insulating layer on the intermediate layer.

The present invention provides an advantageous method for producing a coating (3) increasing the coefficient of friction on a surface (5) of an element (6), wherein the method comprises the following steps: a) activating of hard particles (1) partially or completely covered by a bonding agent (2) in a non-thermal plasma (low-temperature plasma) at atmospheric pressure; and b) producing a layer (3) increasing the coefficient of friction on a surface (5) of the element (6) by depositing the hard particles (1), which are activated by the non-thermal atmospheric pressure plasma and which are coated with the bonding agent onto the surface (5) of the element (6). Specifically, for elements having a complicated shape or having a big size, this method is more efficient than known methods. No matrix or intermediate layers are necessary to fix the hard particles. The anchoring of the hard particles takes place directly in the joining surfaces themselves.

Embodiments of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the embodiments described herein provide methods for producing reduced-stress diamond-like carbon films for patterning applications. In one or more embodiments, a method includes flowing a deposition gas containing a hydrocarbon compound into a processing volume of a process chamber having a substrate positioned on an electrostatic chuck and generating a plasma above the substrate in the processing volume by applying a first RF bias to the electrostatic chuck to deposit a stressed diamond-like carbon film on the substrate. The stressed diamond-like carbon film has a compressive stress of −500 MPa or greater. The method further includes heating the stressed diamond-like carbon film to produce a reduced-stress diamond-like carbon film during a thermal annealing process. The reduced-stress diamond-like carbon film has a compressive stress of less than −500 MPa.

A diamond manufacturing apparatus for forming at least one diamond is provided. The diamond manufacturing apparatus comprises a growth base and an electric field device. The growth base comprises a top portion and a bottom portion opposite to each other, and the top portion has a growth surface that is concave toward the bottom portion. A plurality of electric field lines of an electric field that is generated by the electric field device are substantially perpendicular to the growth surface.

A multi-layer coating on an outer surface of a substrate includes a first layer applied directly to the outer surface of the substrate. The first layer includes diamond-like carbon (DLC) configured to mitigate metal whisker formation. A second layer is applied on a top surface of the first layer. The second layer is a conformal coating that includes a second material configured to bind to the top surface of the first layer and fill any microfractures that may form in the first layer. Optionally, a third layer is applied on a top surface of the second layer and includes DLC configured to protect the second layer from oxidation and degradation.

Methods of depositing a diamond layer are described, which may be used in the manufacture of integrated circuits. Methods include processing a substrate in which nanocrystalline diamond deposited on a substrate, wherein the processing methods result in a nanocrystalline diamond hard mask having high hardness.