Described herein is a chemical vapor deposition (CVD) process for producing diamond, the process comprising: providing a CVD growth chamber containing a growth substrate; charging the CVD growth chamber with a gas mixture, the gas mixture comprising a carbon source gas; activating the gas mixture to facilitate growth of diamond on the growth substrate; and providing for a period of diamond growth during which the gas mixture is sealed within the CVD growth chamber.

Embodiments of the present disclosure provide a film and a forming method thereof. The forming method includes: providing a base; forming a diamond-like carbon film on the base, where the DLC film has carbon-hydrogen chemical bonds; and performing photocatalytic treatment on the DLC film, to break at least some of the carbon-hydrogen chemical bonds and reduce content of hydrogen elements in the DLC film.

Described herein are articles, systems and methods where a halogen resistant coating is deposited onto a surface of a chamber component using an atomic layer deposition (ALD) process. The halogen resistant coating has an optional amorphous seed layer and a transition metal-containing layer. The halogen resistant coating uniformly covers features of the chamber component, such as those having an aspect ratio of about 3:1 to about 300:1.

A high-specific surface area and super-hydrophilic gradient boron-doped diamond electrode is disclosed. The electrode directly uses a substrate as an electrode matrix; or a transition layer is disposed on a surface of the substrate and used as the electrode matrix. A gradient boron-doped diamond layer is disposed on a surface of the electrode matrix, and a contact angle of the electrode is θ<40°. The gradient boron-doped diamond layer includes: a gradient boron-doped diamond bottom layer, a gradient boron-doped diamond middle layer, and a gradient boron-doped diamond top layer, a boron content of which gradually increases, so the gradient boron-doped diamond layer has high adhesion, high corrosion resistance, and high catalytic activity. The high-content boron of the top layer is combined with a one-time high-temperature treatment, so the gradient boron-doped diamond electrode has a high-specific surface area and superhydrophilicity, which may greatly improve the mineralization and degradation efficiency of the electrode.

The present disclosure relates to a method of making fancy orange synthetic CVD diamond material. Among other things, the method may involve (i) providing a single crystal diamond material that has been grown by CVD and has a [N.sub.s.sup.0] concentration less than 5 ppm; (ii) irradiating the provided CVD diamond material so as to introduce isolated vacancies V into at least part of the provided CVD diamond material such that the total concentration of isolated vacancies [V.sub.T] in the irradiated diamond material is at least the greater of (a) 0.5 ppm and (b) 50% higher than the [N.sub.s.sup.0] concentration in ppm in the provided diamond material; and (iii) annealing the irradiated diamond material to forming vacancy chains from at least some of the introduced isolated vacancies.

Improved thin film coatings, cutting tool materials and processes for cutting tool applications are disclosed. A boron-doped graded diamond thin film for forming a highly adhesive surface coating on a cemented carbide (WC—Co) cutting tool material is provided. The thin film is fabricated in a HFCVD reactor. It is made of a bottom layer of BMCD in contact with a surface layer of the cemented carbide, a top layer made of NCD and a transition layer with a decreasing concentration gradient of boron obtained by changing the reaction conditions through ramp up option in hot filament CVD reactor. The top layer has a low friction coefficient. The bottom layer in the coating substrate interface has better interfacial adhesion through cobalt and boron reactivity and decreased cobalt diffusivity in the diamond. The transition layer has minimized lattice mismatch and sharp stress concentration between the top and bottom layers.

A method for manufacturing diamond substrate of using source gas containing hydrocarbon gas and hydrogen gas to form diamond crystal on an underlying substrate by CVD method, to form a diamond crystal layer having nitrogen-vacancy centers in at least part of the diamond crystal, nitrogen or nitride gas is mixed in the source gas, wherein the source gas is: 0.005 volume % or more and 6.000 volume % or less of the hydrocarbon gas; 93.500 volume % or more and less than 99.995 volume % of the hydrogen gas; and 5.0×10.sup.−5 volume % or more and 5.0×10.sup.−1 volume % or less of the nitrogen gas or the nitride gas, and the diamond crystal layer having the nitrogen-vacancy centers is formed. A method for manufacturing a diamond substrate to form an underlying substrate, a diamond crystal having a dense nitrogen-vacancy centers (NVCs) with an orientation of NV axis by performing the CVD.

Described herein are articles, systems and methods where a halogen resistant coating is deposited onto a surface of a chamber component using an atomic layer deposition (ALD) process. The halogen resistant coating has an optional amorphous seed layer and a transition metal-containing layer. The halogen resistant coating uniformly covers features of the chamber component, such as those having an aspect ratio of about 3:1 to about 300:1.

A method for manufacturing diamond substrate of using source gas containing hydrocarbon gas and hydrogen gas to form diamond crystal on an underlying substrate by CVD method, to form a diamond crystal layer having nitrogen-vacancy centers in at least part of the diamond crystal, nitrogen or nitride gas is mixed in the source gas, wherein the source gas is: 0.005 volume % or more and 6.000 volume % or less of the hydrocarbon gas; 93.500 volume % or more and less than 99.995 volume % of the hydrogen gas; and 5.0×10.sup.−5 volume % or more and 5.0×10.sup.−1 volume % or less of the nitrogen gas or the nitride gas, and the diamond crystal layer having the nitrogen-vacancy centers is formed. A method for manufacturing a diamond substrate to form an underlying substrate, a diamond crystal having a dense nitrogen-vacancy centers (NVCs) with an orientation of NV axis by performing the CVD.

A diamond substrate according to an embodiment includes a diamond layer including at least one first element selected from the group consisting of nitrogen (N), phosphorus (P), arsenic (As), antimony (Sb), and bismuth (Bi), the number of threefold coordinated atoms of the at least one first element in the diamond layer being larger than the number of fourfold coordinated atoms of the at least one first element in the diamond layer, a surface of the diamond layer having an off angle of 10 degrees or less with respect to a (111) face.