Patent classifications
C23C16/278
3D Printed Diamond/Metal Matrix Composite Material and Preparation Method and Use thereof
A 3D printed diamond/metal matrix composite material and a preparation method and application thereof are provided. The composite material includes core-shell doped diamond, a metal matrix, and an additive, where the core-shell doped diamond includes a core, a transition layer, a shell, a coating, a porous layer, and a modification layer. The preparation method includes: uniformly mixing the diamond, the metal matrix, and the additive and performing 3D printing according to a 3D CAD slice model to obtain the composite material designed by the model. The metal matrix and the diamond surface of the composite material are mainly metallurgically bound, which can improve the binding strength between the diamond and the metal matrix, thereby improving the use properties of the composite material and a diamond tool. The core-shell doped diamond has good ablation resistance, and can effectively avoid and reduce thermal damage to diamond in a 3D printing forming process.
Laser Activated Luminescence System
A laser activated luminescence system is provided. Another aspect pertains to a system employing a plasma assisted vapor deposition reactor which creates diamond layers on a substrate, in combination with a laser system to at least photoactivate and anneal the diamond layers. Yet another aspect of the present system uses a laser to assist with placement of color centers, such as nitrogen vacancy centers, in diamond. The present method uses lasers to manufacture more than two activated nitrogen vacancy center nodes in a diamond substrate, with nanometer spatial resolution and at a predetermined depth.
HIGH-SPECIFIC SURFACE AREA AND SUPER-HYDROPHILIC GRADIENT BORON-DOPED DIAMOND ELECTRODE, METHOD FOR PREPARING SAME AND APPLICATION THEREOF
A high-specific surface area and super-hydrophilic gradient boron-doped diamond electrode is disclosed. The electrode directly uses a substrate as an electrode matrix; or a transition layer is disposed on a surface of the substrate and used as the electrode matrix. A gradient boron-doped diamond layer is disposed on a surface of the electrode matrix, and a contact angle of the electrode is θ<40°. The gradient boron-doped diamond layer includes: a gradient boron-doped diamond bottom layer, a gradient boron-doped diamond middle layer, and a gradient boron-doped diamond top layer, a boron content of which gradually increases, so the gradient boron-doped diamond layer has high adhesion, high corrosion resistance, and high catalytic activity. The high-content boron of the top layer is combined with a one-time high-temperature treatment, so the gradient boron-doped diamond electrode has a high-specific surface area and superhydrophilicity, which may greatly improve the mineralization and degradation efficiency of the electrode.
Diamond material
The present disclosure relates to a method of making fancy orange synthetic CVD diamond material. Among other things, the method may involve (i) providing a single crystal diamond material that has been grown by CVD and has a [N.sub.s.sup.0] concentration less than 5 ppm; (ii) irradiating the provided CVD diamond material so as to introduce isolated vacancies V into at least part of the provided CVD diamond material such that the total concentration of isolated vacancies [V.sub.T] in the irradiated diamond material is at least the greater of (a) 0.5 ppm and (b) 50% higher than the [N.sub.s.sup.0] concentration in ppm in the provided diamond material; and (iii) annealing the irradiated diamond material to forming vacancy chains from at least some of the introduced isolated vacancies.
ELECTROLYTIC CELL EQUIPPED WITH MICROELECTRODES
An electrolytic cell equipped with microelectrodes for the generation of un-separated products and the method for obtaining it. The cell and the microelectrodes are obtained using a technology for the production of microelectromechanical systems (MEMS). The anodic and cathodic microelectrodes have an electrocatalytic coating and are mutually intercalated at an interelectrodic gap lower than 300 micrometres.
PHOSPHORUS INCORPORATION FOR N-TYPE DOPING OF DIAMOND WITH (100) AND RELATED SURFACE ORIENTATION
Apparatuses and methods are provided for manufacturing diamond electronic devices. The method includes at least one of the following acts: positioning a substrate in a plasma enhanced chemical vapor deposition (PECVD) reactor; controlling temperature of the substrate by manipulating microwave power, chamber pressure, and gas flow rates of the PECVD reactor; and growing phosphorus doped diamond layer on the substrate using a pulsed deposition comprising a growth cycle and a cooling cycle.
MATRIX-CONTROLLED PRINTHEAD FOR AN ELECTROCHEMICAL ADDITIVE MANUFACTURING SYSTEM
Process for manufacturing a printhead for a 3D manufacturing system that uses metal electrodeposition to construct parts. The printhead may be constructed by depositing layers on top of a backplane that contains control and power circuits. Deposited layers may include insulating layers and an anode layer that contain deposition anodes that are in contact with the electrolyte to drive electrodeposition. Insulating layers may for example be constructed of silicon nitride or silicon dioxide; the anode layer may contain an insoluble conductive material such as platinum group metals and their associated oxides, highly doped semiconducting materials, and carbon based conductors. The anode layer may be deposited using chemical vapor deposition or physical vapor deposition. Alternatively in one or more embodiments the printhead may be constructed by manufacturing a separate anode plane component, and then bonding the anode plane to the backplane.
FLUORESCENT DIAMOND AND METHOD FOR PRODUCING SAME
The present invention provides a fluorescent diamond containing an MV center emitting fluorescence at a concentration of 1×10.sup.14/cm.sup.3 or higher, where M represents a metal or metalloid, and V represents a vacancy.
BORON DOPED SYNTHETIC DIAMOND ELECTRODES AND MATERIALS
An electrode comprising synthetic high-pressure high-temperature diamond material, the diamond material comprising a substitutional boron concentration of between 1×10.sup.20 and 5×10.sup.21 atoms/cm.sup.3 and a nitrogen concentration of no more than 10.sup.19 atoms/cm.sup.3. The electrode has a ΔE.sub.3/4-1/4 as measured with respect to a saturated calomel reference electrode in an aqueous solution containing 0.1 M KNO.sub.3 and 1 mM of Ru(NH.sub.3).sub.6.sup.3+ selected any of less than 70 mV, less than 68 mV, less than 66 mV, and less than 64 mV, and/or a peak to peak separation ΔE.sub.p as measured with respect to a saturated calomel reference electrode in an aqueous solution containing 0.1 M KNO.sub.3 and 1 mM of Ru(NH.sub.3).sub.6.sup.3+ selected any of less than 70 mV, less than 68 mV, less than 66 mV, and less than 64 mV.
Highly adhesive CVD grown boron doped diamond graded layer on WC-Co
Improved thin film coatings, cutting tool materials and processes for cutting tool applications are disclosed. A boron-doped graded diamond thin film for forming a highly adhesive surface coating on a cemented carbide (WC—Co) cutting tool material is provided. The thin film is fabricated in a HFCVD reactor. It is made of a bottom layer of BMCD in contact with a surface layer of the cemented carbide, a top layer made of NCD and a transition layer with a decreasing concentration gradient of boron obtained by changing the reaction conditions through ramp up option in hot filament CVD reactor. The top layer has a low friction coefficient. The bottom layer in the coating substrate interface has better interfacial adhesion through cobalt and boron reactivity and decreased cobalt diffusivity in the diamond. The transition layer has minimized lattice mismatch and sharp stress concentration between the top and bottom layers.