Process for manufacturing a nuclear component comprising i) a support containing a substrate based on a metal (1), the substrate (1) being coated or not coated with an interposed layer (3) positioned between the substrate (1) and at least one protective layer (2) and ii) the protective layer (2) composed of a protective material comprising chromium; the process comprising a step a) of vaporizing a mother solution followed by a step b) of depositing the protective layer (2) onto the support via a process of chemical vapor deposition of an organometallic compound by direct liquid injection (DLI-MOCVD).

Nuclear component comprising i) a support containing a substrate based on a metal, the substrate (1) being coated or not coated with an interposed layer (3) positioned between the substrate (1) and at least one protective layer (2) and ii) the protective layer (2) composed of a protective material comprising chromium. The composite nuclear component manufactured by the process of the invention has improved resistance to oxidation, hydriding and/or migration of undesired material.

The invention also relates to the use of the nuclear component for combating oxidation and/or hydriding.

A composite nuclear reactor component comprises a support and a protective layer (2). The support contains a substrate (1) based on a metal. The substrate is coated with an interposed layer (3) positioned between the substrate (1) and the protective layer (2). The protective layer (2) is composed of a material which comprises amorphous chromium carbide. The nuclear reactor component provides for improved resistance to oxidation, hydriding, and/or migration of undesired material.

A coated tool of the present disclosure is provided with a base member and a coating layer located on a surface of the base member. The coating layer includes a TiCNO layer and an Al.sub.2O.sub.3 layer. The Al.sub.2O.sub.3 layer is located in contact with the TiCNO layer at a position farther from the base member than the TiCNO layer is. The TiCNO layer includes a composite protrusion including a first protrusion that projects toward the Al.sub.2O.sub.3 layer, a second protrusion that projects from the first protrusion in a direction intersecting a direction in which the first protrusion projects, and a third protrusion that projects from the second protrusion in a direction intersecting the direction in which the second protrusion projects.

In a vanadium nitride film formed on a surface of a base material, a ratio V [at %]/N [at %] between a vanadium element concentration and a nitrogen element concentration in the film is 1.08 or more and a chlorine element concentration in the film is 1 at % or more and 5 at % or less.

Process for manufacturing a nuclear component comprising i) a support containing a substrate based on a metal (1), the substrate (1) being coated or not coated with an interposed layer (3) positioned between the substrate (1) and at least one protective layer (2) and ii) the protective layer (2) composed of a protective material comprising chromium; the process comprising a step a) of vaporizing a mother solution followed by a step b) of depositing the protective layer (2) onto the support via a process of chemical vapor deposition of an organometallic compound by direct liquid injection (DLI-MOCVD).

A method and system for forming a conformal silicon carbon nitride layer overlying a gap on a surface of a substrate are disclosed. Exemplary methods include forming conformal silicon carbon nitride material within the gap and treating the conformal silicon carbon nitride material to form treated silicon carbon nitride material. The deposition time is relatively short to mitigate flow of the conformal silicon carbon nitride material within the gap.

Provided is a coated tool in which a hard coating layer has excellent hardness and toughness and exhibits chipping resistance and defect resistance during long-term use. The hard coating layer includes at least a layer of a complex nitride or complex carbonitride expressed by the composition formula: (Ti.sub.1-x-yAl.sub.xMe.sub.y) (C.sub.zN.sub.1-x) (here, Me is one element selected from among Si, Zr, B, V, and Cr), an average amount Xavg of Al, an average amount Yavg of Me, and an average amount Zavg of C satisfy 0.60≦Xavg, 0.005≦Yavg≦0.10, 0≦Zavg≦0.005, and 0.605≦Xavg+Yavg≦0.95, crystal grains having a cubic structure are present in crystal grains constituting the layer of a complex nitride or complex carbonitride, and in the crystal grains having a cubic structure, a predetermined periodic concentration variation of Ti, Al, and Me is present, whereby the problems are solved.

Disclosed are Si-containing film forming composition comprising organodisilane precursors. The organodisilane precursors have the formula (E-(CR).sub.n-E)SiH.sub.2—SiH.sub.x(E-(CR).sub.n-E).sub.3-x, wherein x is 2 or 3; each n is independently 1 or 3; each (E-(CR).sub.n-E) group is a monoanionic bidentate ligand bonding to the Si through each E; each E is independently chosen from NR, O or S; and each R is independently selected from the group consisting of H, a C1 to C6 alkyl group, and a C3-C20 aryl or heterocycle group. Also disclosed are methods of synthesizing the Si-containing film forming compositions and methods of using the same to deposit silicon-containing films using vapor deposition processes for manufacturing semiconductors, photovoltaics, LCD-TFT, flat panel-type devices, refractory materials, or aeronautics.

Systems and methods are provided herein to thermally activate a nitrogen-containing gas at lower activation temperatures (e.g., below 2000 C) than conventional hot-wire heating methods, while more effectively heating larger gas volumes. In the disclosed embodiments, a gas activation chamber is provided within a deposition system for thermally activating a nitrogen-containing gas. In one example, ammonia (NH.sub.3) may be thermally activated within the gas activation chamber to generate ammonia radicals and/or hydrazine compounds before the ammonia, ammonia radicals and/or hydrazine compounds are delivered to the substrate surface. Because ammonia radicals and hydrazine compounds are significantly more reactive than ammonia, especially at lower substrate temperatures (e.g., <900 C), ammonia radicals and hydrazine compounds can be more effectively used to deposit nitride layers (such as silicon nitride) over a broader range of substrate temperatures.

A method for deposition of nitrogen-doped nanocarbon comprises disposing molten polymer and a heated substrate in a plasma reactor; providing dense nitrogen-containing plasma in the plasma reactor in a space between the molten polymer and the heated substrate; and allowing the dense nitrogen-containing plasma to interact with both the molten polymer and the heated substrate to form a film of nitrogen-containing nanocarbon on the heated substrate.