The disclosure relates to a sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to accommodate at least one substrate; a first precursor flow path to provide the first precursor to the reaction chamber when a first flow controller is activated; a second precursor flow path to provide a second precursor to the reaction chamber when a second flow controller is activated; a removal flow path to allow removal of gas from the reaction chamber; a removal flow controller to create a gas flow in the reaction chamber to the removal flow path when the removal flow controller is activated; and, a sequence controller operably connected to the first, second and removal flow controllers and the sequence controller being programmed to enable infiltration of an infiltrateable material provided on the substrate in the reaction chamber. The apparatus may be provided with a heating system.

Embodiments of the present disclosure provide a reaction gas supply system and a control method. The reaction gas supply system includes a plurality of precursor containers and a plurality of supply regulator devices. The precursor container is connected to at least one of the reaction chambers. The plurality of precursor containers include at least a pair of precursor containers of an arbitrary combination. A supply regulator device is arranged between each pair of precursor containers. The supply regulator device is configured to connect the corresponding pair of precursor containers. With the reaction gas supply system and the control method of the present disclosure, the reaction gas may be ensured to be supplied stably, the utilization rate of the precursor may be increased, and the production efficiency and the product quality may be increased.

Systems and methods related to temperature zone control systems can include a reactant source cabinet that is configured to be at least partially evacuated, a vessel base that is configured to hold solid source chemical reactant therein, and a lid that is coupled to a distal portion of the vessel base. The lid may include one or more lid valves. The system may further include a plurality of gas panel valves that are configured to deliver gas from a gas source to the vessel. The system may include a heating element that is configured to heat the one or more lid valves. The system may include a heat shield, a first portion of which is disposed between the one or more lid valves and the vessel base. A second portion of the heat shield may be disposed between the first heating element and the plurality of gas panel valves.

The present disclosure provides a composite coating and a method for fabricating the composite coating. The composite coating comprises a polymer layer, a metal interlayer and an amorphous metal coating. The polymer layer is formed on a substrate and acts as a diffusion barrier layer, which is thick and dense enough to prevent the corrosive substances from penetrating into the substrate. The metal interlayer is formed between the polymer layer and the amorphous metal coating for improving the adhesion of the amorphous metal coating to the substrate.

An apparatus for atomic scale processing is provided. The apparatus may include a reactor and an inductively coupled plasma source. The reactor may have inner and outer surfaces such that a portion of the inner surfaces define an internal volume of the reactor. The internal volume of the reactor may contain a fixture assembly to support a substrate wherein the partial pressure of each background impurity within the internal volume may be below 10.sup.−6 Torr to reduce the role of said impurities in surface reactions during atomic scale processing.

A flow rate control device 100 includes a flow rate control valve 8 having a valve element 8a and a piezoelectric element 8b for moving the valve element, and a control circuit 9 for controlling an operation of the flow rate control valve 8, wherein, in order to perform a pulsed fluid supply, the control circuit 9 is configured so as to open-loop control an applied voltage to the piezoelectric element so that it approaches the target voltage after once applying a voltage V1 exceeding a target voltage V0 corresponding to a target displacement of the piezoelectric element, when a pulsed flow rate setting signal is given.

Disclosed are an apparatus and method of manufacturing an oxide film having a uniform composition and thickness. The apparatus includes a lower chamber including a reaction space, a susceptor to support a substrate, a chamber lid including gas injection ports, a gas distribution module between the chamber lid and the susceptor and connected to the gas injection ports, a first source container module comprising a first source gas having a first vapor pressure, a first carrier gas supply module supplying a first carrier gas to the first source container module, a second source container module comprising a second source gas having a second vapor pressure, a force gas supply module supplying a force gas, and a reactant gas supply module supplying a reactant gas.

A system and method for reducing thermal transfer in a dual ampoule system. The dual ampoule system includes a first ampoule, a second ampoule, and a planar heat shield. The planar heat shield is positioned between the first ampoule and the second ampoule, where the planar heat shield is configured to resist thermal transfer between the first ampoule and the second ampoule.

Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a precursor and a chalcogenide reactant to form the transition metal dichalcogenide film. The exposures can be sequential or simultaneous.

An apparatus for manufacturing a display apparatus includes a deposition source, a nozzle head, a substrate fixer, and a deposition preventer. The deposition source is outside the chamber and vaporizes or sublimates a deposition material. The nozzle head is in the chamber, is connected to the at least one deposition source, and simultaneously sprays the deposition material onto an entire surface of a display substrate. The substrate fixer is connected to the chamber and moves linearly, with the display apparatus is mounted on the substrate fixer. The deposition preventer is in the chamber surrounding an edge portion of the nozzle head and an edge portion of the substrate fixer. The deposition preventer is heated during a deposition process.