A CaTiO.sub.3—TiO.sub.2 composite electrode and method of making is described. The composite electrode comprises a substrate with an average 2-12 μm thick layer of CaTiO.sub.3—TiO.sub.2 composite particles having average diameters of 0.2-2.2 μm. The method of making the composite electrode involves contacting the substrate with an aerosol comprising a solvent, a calcium complex, and a titanium complex. The CaTiO.sub.3—TiO.sub.2 composite electrode is capable of being used in a photoelectrochemical cell for water splitting.

Methods and apparatuses for depositing material into high aspect ratio features are described herein. Methods involve depositing an oxide material using a hydrogen-containing oxidizing chemistry. Methods may also involve thermally treating deposited oxide material in the presence of hydrogen to remove seams within the deposited oxide material.

A film formation apparatus includes a stage, a heater, a mist supply source, a superheated vapor supply source, and a delivery device. The stage is configured to allow a substrate to be mounted thereon. The heater is configured to heat the substrate. The mist supply source is configured to supply mist of a solution that comprises solvent and a film material dissolved in the solvent. The superheated vapor supply source is configured to supply a superheated vapor of a same material as the solvent. The delivery device is configured to deliver the mist and the superheated vapor toward a surface of the substrate to grow a film containing the film material on the surface of the substrate.

A semiconductor device includes: a semiconductor film including a Schottky junction region and an Ohmic junction region; a Schottky electrode arranged on the Schottky junction region; and an Ohmic electrode arranged on the Ohmic junction region, the Schottky junction region having a first dislocation density, the Ohmic junction region having a second dislocation region, and the first dislocation density being smaller than the second dislocation density.

A CaTiO.sub.3—TiO.sub.2 composite electrode and method of making is described. The composite electrode comprises a substrate with an average 2-12 μm thick layer of CaTiO.sub.3—TiO.sub.2 composite particles having average diameters of 0.2-2.2 μm. The method of making the composite electrode involves contacting the substrate with an aerosol comprising a solvent, a calcium complex, and a titanium complex. The CaTiO.sub.3—TiO.sub.2 composite electrode is capable of being used in a photoelectrochemical cell for water splitting.

A method for producing a liquid transport apparatus is disclosed. The liquid transport apparatus includes a pressure chamber plate, a ceramics layer formed on a surface of the pressure chamber plate, a piezoelectric layer formed on the ceramics layer, and an electrode formed on the piezoelectric layer. The ceramics layer is formed by heating an insulating ceramic material at a temperature lower than an annealing temperature of the piezoelectric layer. Accordingly, the atoms of the pressure chamber plate are suppressed from being diffused into the piezoelectric layer.

Apparatus and methods for supplying a vapor to a processing chamber such as a film deposition chamber are described. The vapor delivery apparatus comprises an inlet conduit and an outlet conduit, in fluid communication with an ampoule. A needle valve device restricts flow through the outlet conduit.

Processes and apparatus are described for atmospheric pressure plasma jet deposition onto a substrate. The process comprises feeding a solution comprising a dissolved metal precursor into a plasma jet. The dissolved metal precursor comprises a precursor metal selected from Groups 2 to 16, with the proviso that the precursor metal does not comprise Mn. The plasma jet is directed towards a surface of the substrate such that material from the plasma jet becomes deposited onto the surface of the substrate. The process provides a means to manufacture conductive, semiconducting or insulating deposits on a substrate in a material-efficient manner without the need for high-temperature post-treatment steps.

The disclosure provides a film forming method that enables to obtain an epitaxial film with reduced defects such as dislocations due to a reduced facet growth industrially advantageously, even if the epitaxial film has a corundum structure. When forming an epitaxial film on a crystal-growth surface of a corundum-structured crystal substrate directly or via another layer, using the crystal substrate having an uneven portion on the crystal-growth surface of the crystal substrate, generating and floating atomized droplets by atomizing a raw material solution including a metal; carrying the floated atomized droplets onto a surface of the crystal substrate by using a carrier gas; and causing a thermal reaction of the atomized droplets in a condition of a supply rate limiting state.

A method for producing a crystalline oxide semiconductor film in which, a crystalline oxide semiconductor layer and a light absorbing layer are laminated on a substrate, the light absorbing layer is irradiated with light to decompose the light absorbing layer and separate the crystalline oxide semiconductor layer and the substrate to produce a crystalline oxide semiconductor film. This provides a method for industrially advantageously producing a crystalline oxide semiconductor film, for example, a crystalline oxide semiconductor film useful for a semiconductor device (particularly a vertical element).