The present invention relates to coating glass for architectural or automotive use, either monolithic or laminated, having solar control properties. The coating consists of several layers of different metal oxide semiconductors (TiO.sub.2, ZnO, ZrO.sub.2, SnO.sub.2, Al.sub.2O.sub.3) and a layer of metallic nanoparticles, which when superimposed on a pre-established order give the glass solar control properties. In particular the use of protective layers of n-type semiconductors around the metallic nanoparticles layer. It also relates to the method for obtaining the coating by means of the aerosol-assisted chemical vapor deposition technique, using precursor solutions containing an organic or inorganic salt (acetates, acetylacetonates, halides, nitrates) of the applicable elements and an appropriate solvent (water, alcohol, acetone, acetylacetone, etc.). The synthesis is performed at a temperature between 100 and 600° C. depending on the material to be deposited. A nebulizer converts the precursor solution into an aerosol which is submitted with a gas to the substrate surface, where due to the temperature the thermal decomposition of the precursor occurs and the deposition of each layer of the coating occurs.

Process for manufacturing a nuclear component comprising i) a support containing a substrate based on a metal (1), the substrate (1) being coated or not coated with an interposed layer (3) positioned between the substrate (1) and at least one protective layer (2) and ii) the protective layer (2) composed of a protective material comprising chromium; the process comprising a step a) of vaporizing a mother solution followed by a step b) of depositing the protective layer (2) onto the support via a process of chemical vapor deposition of an organometallic compound by direct liquid injection (DLI-MOCVD).

Nuclear component comprising i) a support containing a substrate based on a metal, the substrate (1) being coated or not coated with an interposed layer (3) positioned between the substrate (1) and at least one protective layer (2) and ii) the protective layer (2) composed of a protective material comprising chromium. The composite nuclear component manufactured by the process of the invention has improved resistance to oxidation, hydriding and/or migration of undesired material.

The invention also relates to the use of the nuclear component for combating oxidation and/or hydriding.

A synthetic methodology for robust, nanostructured films of cobalt oxide over metal evaporated gold or similar material layer of, e.g., 50 nm, directly onto glass or other substrates via aerosol assisted chemical vapor deposition (AACVD). This approach allows film growth rates in the range of, e.g., 0.8 nm/s, using a commercially available precursor, which is ˜10-fold the rate of electrochemical synthetic routes. Thus, 250 nm thick cobalt oxide films may be generated in only 5 minutes of deposition time. The water oxidation reaction for such films may start at ˜0.6 V vs Ag/AgCl with current density of 10 mA/cm.sup.2 and is achieved at ˜0.75 V corresponding to an overpotential of 484 mV. This current density is further increased to 60 mA/cm.sup.2 at ˜1.5 V (vs Ag/AgCl). Electrochemically active surface area (ECSA) calculations indicate that the synergy between a Au-film, acting as electron sink, and the cobalt oxide film(s), acting as catalytic layer(s), are more pronounced than the surface area effects.

A method of making a nanostructured palladium thin film electrode is described. The method involves contacting a substrate with an aerosol comprising a solvent and a Pd(II) compound. The substrate is heated, and no hydrogen gas or an additional reducing agent is required to reduce the Pd(II) to form the deposited thin film. The nanostructured palladium thin film electrode is capable of detecting compounds such as hydrazine in an aqueous sample with a 10 nM limit of detection.

A method of making a nanostructured palladium thin film electrode is described. The method involves contacting a substrate with an aerosol comprising a solvent and a Pd(II) compound. The substrate is heated, and no hydrogen gas or an additional reducing agent is required to reduce the Pd(II) to form the deposited thin film. The nanostructured palladium thin film electrode is capable of detecting compounds such as hydrazine in an aqueous sample with a 10 nM limit of detection.

A wafer processing apparatus is configured to process a wafer by supplying mist to a surface of the wafer. The wafer processing apparatus includes a furnace in which the wafer is disposed, a gas supplying device configured to supply gas into the furnace, a mist supplying device configured to supply the mist into the furnace, and a controller. The controller is configured to execute a processing step by controlling the gas supplying device and the mist supplying device to supply the gas and the mist into the furnace, respectively. The controller is further configured to control the mist supplying device to stop supplying the mist into the furnace while controlling the gas supplying device to keep supplying the gas into the furnace when the processing step ends.

A composite nuclear reactor component comprises a support and a protective layer (2). The support contains a substrate (1) based on a metal. The substrate is coated with an interposed layer (3) positioned between the substrate (1) and the protective layer (2). The protective layer (2) is composed of a material which comprises amorphous chromium carbide. The nuclear reactor component provides for improved resistance to oxidation, hydriding, and/or migration of undesired material.

An atomizing apparatus for film formation, including: a raw-material container configured to accommodate a raw-material solution; a cylindrical member configured to spatially connect inside of the container to an outer unit, and disposed so a lower end of the cylindrical member does not touch a liquid surface of the solution in the container; an ultrasound generator having at least one ultrasound generation source; and a liquid tank where the ultrasound propagates to the raw-material solution through a middle solution. A center line of an ultrasound-emitting surface of the ultrasound generation source is designated u, the source is provided so an intersection P between line u and a plane containing a side wall surface of the cylindrical member and an extension thereof is located below a lower end point B of the cylindrical member. This provides an atomizing apparatus for film formation, enabling high-quality thin film formation with suppressed particle adhesion.

An atomizing apparatus for film formation enabling high-quality thin film formation with suppressed particle adhesion, including: a raw-material container accommodating a raw-material solution; a cylindrical member connecting inside the raw-material container to an outer unit, and disposed so a lower end of the cylindrical member does not touch a liquid surface of the raw-material solution in the container; an ultrasound generator having at least one source emitting ultrasound; and a liquid tank where the ultrasound propagates the raw-material solution through a middle solution. The generation source is outside the liquid tank and has a center between a plane extending from an inner side wall of the raw-material container and a plane extending from an outer side wall of the cylindrical member. A center line of an ultrasound-emitting surface of the ultrasound generation source is designated as u, wherein the center line u does not intersect the cylindrical member side wall.

An apparatus for manufacturing a display apparatus includes a deposition source, a nozzle head, a substrate fixer, and a deposition preventer. The deposition source is outside the chamber and vaporizes or sublimates a deposition material. The nozzle head is in the chamber, is connected to the at least one deposition source, and simultaneously sprays the deposition material onto an entire surface of a display substrate. The substrate fixer is connected to the chamber and moves linearly, with the display apparatus is mounted on the substrate fixer. The deposition preventer is in the chamber surrounding an edge portion of the nozzle head and an edge portion of the substrate fixer. The deposition preventer is heated during a deposition process.