An apparatus for use in a chemical vapor infiltration process is disclosed. The apparatus can optionally include any one or combination of a first reaction chamber, a mixing chamber and a second reaction chamber. The mixing chamber can have at least a first inlet, a second inlet and an outlet. The first inlet can be in fluid communication with the first reaction chamber and receive a second precursor gas. The second inlet can be in fluid communication to receive a third precursor gas. The second precursor gas and the third precursor gas can mix within the mixing chamber before passing to the outlet and into the second reaction chamber. The second reaction chamber can contain a substrate that can receive a film deposition from reaction of the second precursor gas and the third precursor gas within the second reaction chamber.

A coated cutting tool includes a substrate and a hard film on coated on the substrate. The hard film contains a complex nitride of Al and Cr. The hard film includes aggregates of columnar grains grown on the substrate along the thickness of the film. The nitride has an Al content of 60 atom % or more, a Cr content of 10 atom % or more, and a total content of Al and Cr of 90 atom % or more relative to the total amount of metal and metalloid elements. The complex nitride has the highest peak intensity assigned to crystal plane (311) of an fcc structure in X-ray diffractometry. In the hard film, the ratio of an X-ray diffraction intensity of plane (311) to the intensities of the other planes is 1.30 or more. A method and a system are also provided for manufacturing the coated cutting tool by chemical vapor deposition.

Methods of forming a ceramic matrix, as well as fiber preforms and methods of forming fiber preforms to facilitate formation of a ceramic matrix are provided. The method includes obtaining a fiber preform to facilitate forming the ceramic matrix. The fiber preform includes a fiber layer with a plurality of fibers and a heating element embedded within the fiber preform. The method also includes heating the fiber preform via the heating element embedded within the fiber preform, and depositing matrix material into the fiber preform by embedded wire chemical vapor deposition (EWCVD) of the matrix material during the heating of the fiber preform by the heating element. The chemical vapor deposition of the matrix material within the fiber preform facilitates formation of the ceramic matrix.

The present disclosure generally relates to bilayer metal dichalcogenides, to processes for forming bilayer metal dichalcogenides, and to uses of bilayer metal dichalcogenides in devices for quantum electronics. In an aspect, a device is provided. The device includes a gate electrode, a substrate disposed over at least a portion of the gate electrode, and a bottom layer including a first metal dichalcogenide, the bottom layer disposed over at least a portion of the substrate. The device further includes a top layer including a second metal dichalcogenide, the top layer disposed over at least a portion of the bottom layer, the first metal dichalcogenide and the second metal dichalcogenide being the same or different. The device further includes a source electrode and a drain electrode disposed over at least a portion of the top layer.

A method of forming a vapour deposited polymeric conformal coating on a surface of a part (23). The method comprises placing the part (23) and a flow control screen in a deposition chamber (22); dispersing a gas into the chamber (22) from which the polymeric coating is deposited on the surface. The flow control screen is spaced apart from the surface and is configured to control a localised flow of the gas in the chamber so as to impose a structure on the deposited coating.

A method for coating a component including the following steps: providing a gas phase containing at least one tetra-alkoxy silane as first silicon-containing precursor, at least one functionalised silicic acid ester with a phenyl, vinyl, allyl, thiol, amino, acryloxy, epoxy, nitrile, isocyanate, isothiocyanate or methacrylate group as second silicon-containing precursor, at least one catalyst, water and inert gas, the silicon-containing precursors being added in metered fashion to the gas phase separately from one another and separately from the water and the catalyst, chemically reacting the first silicon-containing precursor with water in the gas phase so ss to form first reaction products, chemically reacting the second silicon-containing precursor with water in the gas phase so as to form second reaction products, depositing the reaction products on the component. The reaction products of all precursors together form a coating on the component based on amorphous silicon dioxide.

A method of making an atomic layer nanoribbon that includes forming a double atomic layer ribbon having a first monolayer and a second monolayer on a surface of the first monolayer, wherein the first monolayer and the second monolayer each contains a transition metal dichalcogenide material, oxidizing at least a portion of the first monolayer to provide an oxidized portion, and removing the oxidized portion to provide an atomic layer nanoribbon of the transition metal dichalcogenide material. Also provided are double atomic layer ribbons, double atomic layer nanoribbons, and single atomic layer nanoribbons prepared according to the method.

This invention relates to a method for synthesizing polyoxymethylene on a substrate. The method includes depositing monomer capable of forming polyoxymethylene by an initiated polymerization reaction and an initiator, via initiated chemical vapor deposition (iCVD) onto a surface of a substrate in an initiated chemical vapor deposition reactor.

Systems having one or more features that are advantageous for depositing fluorinated polymeric coatings on substrates, and methods of employing such systems to deposit such coatings, are generally provided.

This disclosure provides a vapor-liquid reaction device including a vapor-liquid reaction chamber and a projecting member. The vapor-liquid reaction chamber holds a molten metal in a lower portion of an internal space of the vapor-liquid reaction chamber.