Methods for filling gaps with dielectric material involve deposition using an atomic layer deposition (ALD) technique to fill a gap followed by deposition of a cap layer on the filled gap by a chemical vapor deposition (CVD) technique. The ALD deposition may be a plasma-enhanced ALD (PEALD) or thermal ALD (tALD) deposition. The CVD deposition may be plasma-enhanced CVD (PECVD) or thermal CVD (tCVD) deposition. In some embodiments, the CVD deposition is performed in the same chamber as the ALD deposition without intervening process operations. This in-situ deposition of the cap layer results in a high throughput process with high uniformity. After the process, the wafer is ready for chemical-mechanical planarization (CMP) in some embodiments.

Systems for and methods of manufacturing a ceramic matrix composite include introducing a gaseous precursor into an inlet portion of a reaction furnace having a chamber comprising the inlet portion and an outlet portion that is downstream of the inlet portion, and delivering a mitigation agent, such as water vapor or ammonia, into an exhaust conduit in fluid communication with and downstream of the outlet portion of the reaction chamber so as to control chemical reactions occurring with the exhaust chamber. Introducing the gaseous precursor densifies a porous preform, and introducing the mitigation agent shifts the reaction equilibrium to disfavor the formation of harmful and/or pyrophoric byproduct deposits within the exhaust conduit.

A system for coating ceramic fibers for use in manufacturing a ceramic matric composite (CMC) article includes a frame having a plurality of frame members arranged so as to create a void therebetween. At least one of frame members includes a hollow body and at least one perforated hole defined in the hollow body. Thus, the ceramic fibers are securable at respective ends of the frame and extend across the void. The frame also includes an inlet in fluid communication with the perforated hole(s) so as to allow a coating material to flow into and through the hollow body and out of the perforated hole(s) at a location of at least a portion of one of the ceramic fibers. As such, the coating material is configured to cause the portion of one of the ceramic fibers to separate from the frame such that the portion is uniformly coated with the coating material.

A substrate processing apparatus, includes a reaction chamber, a central processing volume within a vertically oriented central processing portion of the reaction chamber, to expose at least one substrate to self-limiting surface reactions in the central processing volume, at least two lateral extensions in the reaction chamber laterally extending from the central processing portion, and an actuator configured to reversibly move at least one substrate between the lateral extension(s) and the central processing volume.

The present disclosure provides a technique that includes: loading a substrate into a process chamber in which the substrate is processed; and processing the substrate by supplying a first inert gas to a peripheral portion of the substrate and simultaneously supplying a mixed gas of a second inert gas different from the first inert gas and a process gas to a surface of the substrate.

Embodiments described herein generally relate to a processing system and a method of delivering a reactant gas. The processing system includes a substrate support system, an injection cone, and an intake. The injection cone includes a linear rudder. The linear rudder is disposed such that the flow of reactant gas through the injection cone results in film growth on a specific portion of a substrate. The method includes flowing the gas through the injection cone and delivering the gas onto the substrate below. The localization of the reactant gas, allows for film growth on a specific portion of the substrate.

An apparatus for manufacturing a display apparatus includes a deposition source, a nozzle head, a substrate fixer, and a deposition preventer. The deposition source is outside the chamber and vaporizes or sublimates a deposition material. The nozzle head is in the chamber, is connected to the at least one deposition source, and simultaneously sprays the deposition material onto an entire surface of a display substrate. The substrate fixer is connected to the chamber and moves linearly, with the display apparatus is mounted on the substrate fixer. The deposition preventer is in the chamber surrounding an edge portion of the nozzle head and an edge portion of the substrate fixer. The deposition preventer is heated during a deposition process.

A substrate processing apparatus, including a reaction chamber to process a substrate, a photon source to provide the reaction chamber with photons from the top side of the reaction chamber, a substrate support to support the substrate, a chemical inlet to provide the reaction chamber with a reactive chemical; and a chemical outlet to exhaust gases from the reaction chamber, the chemical outlet including a surface separating the reaction chamber from a surrounding space.

A method for establishing a desired distribution of partial gas pressure along a surface of a substrate when vacuum treating such substrate includes feeding a gas towards the substrate through openings distributed all along the entire periphery of the substrate. The gas is fed or removed at a gas line which communicates exclusively with a set of the openings.

Examples of the present invention provide an apparatus for transferring substrates and confining a processing environment in a chamber. One example provides a hoop assembly for use in a processing chamber. The hoop assembly includes a confinement ring defining a confinement region therein. A hoop body mates with the confinement ring. The hoop body is slanted to reduce a thickness across a diameter of the hoop body. Three or more lifting fingers are attached to the hoop body and extend downwards. Each of the three or more lifting fingers has a contact tip positioned radially inward from the hoop body to form a substrate support surface below and spaced apart from the confinement region.