A film forming apparatus includes a stage on which a substrate is mounted, a first container configured to accommodate the stage, a gas supply configured to supply gases containing two types of monomers into the first container to form a polymer film on the substrate mounted on the stage, a porous member arranged radially outward from a processing space, which is a space above the substrate, and configured to draw in polymers formed by the gases containing two types of monomers exhausted from the first container, and a heater configured to heat the porous member to a first temperature when the polymer film is formed on the substrate.

The present application discloses a vapor deposition apparatus, including: a reaction chamber, a gas spraying device, and a cleaning gas channel, wherein the gas spraying device includes a reaction gas channel, and the reaction gas channel includes an outlet communicating with the reaction chamber; and the cleaning gas channel is spaced apart from the reaction gas channel, such that the probability of generating the residual produce in the reaction chamber can be reduced, and the uniformity of film formation and the utilization rate of the machine are improved.

There is provided a shower head disposed in a processing container where a substrate is accommodated and configured to discharge a gas to the substrate in a shower pattern, comprising: a main body portion having a facing surface facing a stage disposed in the processing container to place the substrate thereon; a covering section that covers a surface formed on an opposite side of the facing surface of the main body portion, and forms, between the surface and the covering section, an exhaust space that is exhausted by an exhaust mechanism; a plurality of exhaust hole forming regions disposed on the facing surface apart from each other and each having a plurality of exhaust holes; a plurality of discharge holes disposed for each of the exhaust hole forming regions on the facing surface to surround each of the plurality of exhaust hole forming regions and configured to discharge the gas; a diffusion space disposed to be shared by the plurality of discharge holes, where the gas supplied to the main body portion is diffused to be supplied to each of the plurality of discharge holes; and an exhaust path disposed in the main body portion to be connected to the exhaust holes and opened to the exhaust space in order to exhaust the gas discharged from the discharge holes into the exhaust space.

A gas processing apparatus includes: a mounting part; a gas supply part located above the mounting part and having a plurality of first gas supply holes; a gas supply path forming part configured to form a supply path of a processing gas, the gas supply path forming part including a flat opposing surface which faces the gas supply part from above and defines a first diffusion space for diffusing the processing gas in a lateral direction; a recess surrounding a central portion of the opposing surface; and a plurality of gas dispersion portions located in the recess surrounding the central portion of the opposing surface without protruding from the opposing surface, each of the plurality of gas dispersion portions having a plurality of gas discharge holes extending along a circumferential direction so as to laterally disperse the processing gas supplied from the supply path in the first diffusion space.

A film-forming apparatus for forming a predetermined film on a substrate by plasma ALD includes a chamber, a stage, a shower head having an upper electrode and a shower plate insulated from the upper electrode, a first high-frequency power supply connected to the upper electrode, and a second high-frequency power supply connected to an electrode contained in the stage. A high-frequency power is supplied from the first high-frequency power supply to the upper electrode, thereby forming a high-frequency electric field between the upper electrode and the shower plate and generating a first capacitively coupled plasma. A high-frequency power is supplied from the second high-frequency power supply to the electrode, thereby forming a high-frequency electric field between the shower plate and the electrode in the stage and generating a second capacitively coupled plasma that is independent from the first capacitively coupled plasma.

A film forming method of forming a carbon film includes: cleaning an interior of a processing container by using oxygen-containing plasma in a state in which no substrate is present inside the processing container; subsequently, extracting and removing oxygen inside the processing container by using plasma in the state in which no substrate is present inside the processing container; and subsequently, loading a substrate into the processing container and forming the carbon film on the substrate through plasma CVD using a processing gas including a carbon-containing gas, wherein the cleaning, the extracting and removing the oxygen, and the forming the carbon film are repeatedly performed.

Showerheads for semiconductor processing equipment are disclosed that include various features designed to reduce nonuniformity and adjust deposited film profiles.

A film forming apparatus includes a film formation chamber capable of accommodating a substrate; a gas supplier including nozzles provided in an upper portion of the film formation chamber to supply a process gas onto a film formation face of the substrate, and a cooling part suppressing a temperature increase of the process gas; a heater heating the substrate to 1500° C. or higher; and a plate opposed to a bottom face of the gas supplier, where first opening parts of the nozzles are formed, in the film formation chamber, and arranged away from the bottom face, in which the plate includes a plurality of second opening parts having a smaller diameter than the first opening parts, and arranged substantially uniformly in a plane of the plate, and a partition protruded on an opposed face to the gas supplier and separating the plane of the plate into regions.

Embodiments of showerheads are provided herein. In some embodiments, a showerhead for use in a process chamber includes a gas distribution plate having an upper surface and a lower surface; a plurality of channels extending through the gas distribution plate substantially perpendicular to the lower surface; a plurality of first gas delivery holes extending from the upper surface to the lower surface between adjacent channels of the plurality of channels to deliver a first process gas through the gas distribution plate; and a plurality of second gas delivery holes extending from the plurality of channels to the lower surface to deliver a second process gas therethrough without mixing with the first process gas.

Provided by the invention disclosure is a coating equipment. The coating equipment comprises a reaction chamber body provided with a reaction chamber, a gas supply part configured to supply gas to the reaction chamber, a pumping device configured to communicate with the reaction chamber, a pulse power supply adapted to provide the reaction chamber body with a pulsed electric field and a radio frequency power supply adapted to provide the reaction chamber body with a radio frequency electric field, wherein the reaction chamber is adapted to accommodate a plurality of workpiece. When the pulse power supply and the radio frequency power supply are turned on, the gas in the reaction chamber body is ionized under the radio frequency electric field and the pulsed electric field to generate plasma, and the plasma is deposited on the surface of the workpieces.