The invention relates to a device 10 for holding workpieces 30 in a process chamber. The invention additionally relates to a coating system 20 and to a method for coating a workpiece 30. In order to allow for precise adjustment of the height of the position of workpieces 30 while supporting same in a secure and stable manner, the holding device 10 comprises a tray 72 for the workpieces 30, a height-adjustable first support element 22 and a height-adjustable second support element 48 for the tray 72, wherein each of the support elements 22, 48 comprises at least one first and one second limb element 26, 56, wherein the respective first and the respective second limb element 26, 56 are coupled so as to be pivotable relative to one another about a pivot axis X, Y, and wherein the pivot axis X of the first support element 22 is arranged at an angle to the pivot axis Y of the second support element 48.

There is provided a plasma generating device that includes a first electrode connected to a high-frequency power supply, and a second electrode to be grounded, a buffer structure configured to form a buffer chamber that accommodates the first and second electrodes wherein the first electrode and the second electrode are alternately arranged such that a number of electrodes of the first electrode and the second electrode are in an odd number of three or more in total, and wherein the second electrode is used in common for two of the first electrode being respectively adjacent to the second electrode used in common, and wherein a gas supply port that supplies gas into a process chamber is installed on a wall surface of the buffer structure.

The invention relates to a holding system (1) for holding substrates (12) for use in a surface processing system having a covering area (20), comprising a plurality of fixing elements (2), a body (24) arranged within the covering area (20) for receiving the fixing elements (2), and a positioning element (26) for adjusting the covering and a machining area (20, 22), wherein a plurality of substrates (12) can be fixed by the fixing elements (2) and processed within the machining area (22).

There is provided a substrate processing apparatus that includes a process chamber in which at least one substrate is processed; a gas supplier configured to supply a gas; and a buffer structure. The buffer structure includes at least two plasma generation regions in which gas is converted into plasma by a pair of electrodes connected to a high-frequency power supply and an electrode to be grounded, a first gas supply port that supplies a gas generated in a first plasma generation region among the at least two plasma generation regions, and a second gas supply port that supplies a gas generated in a second plasma generation region among the at least two plasma generation regions.

A film forming apparatus according to one aspect of the present disclosure includes a processing chamber, a gas supply pipe extending vertically in the processing chamber and including gas holes, and a boat configured to accommodate substrates including product substrates in a vertical direction in the processing chamber. The film forming apparatus forms a film on each of the substrates by use of gas supplied from the gas holes, each of the substrates corresponding to respective one or more of gas holes. The gas holes that are arranged in a height range in which the product substrates are situated include first gas holes that are opened at a same height, the first gas holes being oriented at respective angles such that respective imaginary lines passing through the first holes and a central axis of the gas supply pipe are at a same angle relative to an imaginary line.

An electrostatic chuck is described that has radio frequency coupling suitable for use in high power plasma environments. In some examples, the chuck includes a base plate, a top plate, a first electrode in the top plate proximate the top surface of the top plate to electrostatically grip a workpiece, and a second electrode in the top plate spaced apart from the first electrode, the first and second electrodes being coupled to a power supply to electrostatically charge the first electrode.

An in-line manufacturing apparatus includes a carrier that transports a substrate, a plurality of process chambers subjected to a manufacturing process on the substrate transported through the carrier, and a cooling part disposed adjacent to the carrier and movable with the carrier.

A substrate guide of the present invention is provided on a carrier frame of a carrier which holds a substrate substantially vertically so that a surface of the substrate is in a substantially vertical direction and supports the substrate by being in contact with at least a peripheral edge end surface portion of the substrate. The substrate guide includes a base attached to the carrier frame, a substrate support which comes into contact with the peripheral edge end surface portion of the substrate held by the carrier and is attached to the base to be movable in a normal direction of the peripheral edge end surface portion in a direction parallel to the surface of the substrate, and a force-applying member which applies a force to the substrate support toward the substrate with respect to the base.

A carrier transport system for transporting a carrier within a vacuum chamber is described. The carrier transport system includes a track assembly extending in a transport direction, the track assembly comprising: a first passive magnetic unit provided at a first vertical coordinate and extending in the transport direction, a second passive magnetic unit provided at a second vertical coordinate and extending in the transport direction, wherein the first passive magnetic unit and the second passive magnetic unit are configured to counteract the weight of the carrier; and a roller transportation track provided at a third vertical coordinate and comprising a plurality of rollers configured to support partial weight of the carrier, wherein a first vertical distance between the first vertical coordinate and the second vertical coordinate is larger than a second distance between the second vertical coordinate and the third vertical coordinate.

A vertical wafer boat for a diffusion process is provided. The vertical wafer boat includes a plurality of wafer racks. Each of the plurality of wafer racks includes a vertical support member and a plurality of wafer support arms. The plurality of wafer support arms extends from a sidewall of the vertical support member. Each of the wafer support arms includes a support body and a ledge. The support body is located between the vertical support member and the ledge. Centers of the support body and the ledge are horizontally aligned. A vertical thickness of the ledge is smaller than a vertical thickness of the support body.