The present inventive concept relates to a substrate processing device and a substrate processing method. The substrate processing device comprises: a chamber; a substrate support part rotatably installed in a process space inside the chamber so as to allow at least one substrate to be seated thereon; a first gas spray unit for spraying, to a first region of the process space, a source gas and a first purge gas for purging the source gas; a source gas supply source for supplying the source gas to the first gas spray unit; a first purge gas supply source for supplying the first purge gas to the first gas spray unit; a second gas spray unit spatially separated from the first region and configured to spray, to a second region of the process space, a reactant gas reacting with the source gas and a second purge gas for purging the reactant gas; a reactant gas supply source for supplying the reactant gas to the second gas spray unit; and a second purge gas supply source for supplying the second purge gas to the second gas spray unit.

A deposition system includes a system housing having a housing interior, a fixture transfer assembly having a generally sloped fixture transfer rail extending through the housing interior, a plurality of sequentially ordered deposition chambers connected by the fixture transfer rail, a controller interfacing with the processing chambers and at least one fixture carrier assembly carried by the fixture transfer rail and adapted to contain at least one substrate. The fixture carrier assembly travels along the fixture transfer rail under influence of gravity. A substrate fixture contains a substrate. The substrate fixture comprises a fixture frame. The fixture frame is defined by multiple circular members adjacently joined in a circular arrangement. Each circular member has a fixture frame opening sized to receive the substrate. Lens support arms may integrate into the circular members, extending in a curved disposition into the fixture frame opening to retain the substrate. A deposition method is also disclosed.

A versatile high throughput deposition apparatus includes a process chamber and a workpiece platform in the process chamber. The workpiece platform can hold a plurality of workpieces around a center region and to rotate the plurality of workpieces around the center region. Each of the plurality of workpieces includes a deposition surface facing the center region. A gas distribution system can distribute a vapor gas in the center region of the process chamber to deposit a material on the deposition surfaces on the plurality of workpieces. A magnetron apparatus can form a closed-loop magnetic field near the plurality of workpieces. The plurality of workpieces can be electrically biased to produce a plasma near the deposition surfaces on the plurality of workpieces.

Methods and systems for forming films on substrates in semiconductor processes are disclosed. The method includes providing different materials each contained in separate ampoules. Material is flowed from each ampoule into a separate portion of a showerhead contained within a process chamber via a heated gas line. From the showerhead, each material is flowed on to a substrate that sits on the surface of a rotating pedestal. Controlling the mass flow rate out of the showerhead and the rotation rate of the pedestal helps result in films with desirable material domain sizes to be deposited on the substrate.

A film forming method includes: rotating a rotary table to revolve a substrate which is placed on the rotary table and has a recess in its surface; supplying a raw material gas to a first region on the rotary table; supplying an ammonia gas to a second region on the rotary table; forming a first SiN film in the recess by supplying the raw material gas to the first region and supplying the ammonia gas to the second region at a first flow rate, while the rotary table rotates at a first rotation speed; and forming a second SiN film in the recess such that the second SiN film is laminated on the first SiN film by supplying the raw material gas to the first region and supplying the ammonia gas to the second region at a second flow rate, while the rotary table rotates at a second rotation speed.

One or more embodiments described herein generally relate to methods and systems for forming films on substrates in semiconductor processes. In embodiments described herein, a process system includes different materials each contained in separate ampoules. Each material is flowed into a separate portion of a showerhead contained within a process chamber via a heated gas line. From the showerhead, each material is flowed on to a substrate that sits on the surface of a rotating pedestal. Controlling the mass flow rate out of the showerhead and the rotation rate of the pedestal helps result in films with desirable material domain sizes to be deposited on the substrate.

There is provided a technique that includes: an exhauster including a casing in which a rotating body is installed; a gas supplier configured to supply an inert gas to the exhauster without passing through a process chamber; and a controller configured to be capable of controlling the gas supplier to supply the inert gas into the casing based on a temperature drop of the rotating body expected in advance in a state where a processing object is not being processed in the process chamber such that a temperature of the rotating body becomes equal to or higher than a target temperature.

In some embodiments, the present disclosure relates to a processing tool that includes a wafer chuck disposed within a hot plate chamber and having an upper surface configured to hold a semiconductor wafer. A heating element is disposed within the wafer chuck and configured to increase a temperature of the wafer chuck. A motor is coupled to the wafer chuck and configured to rotate the wafer chuck around an axis of rotation extending through the upper surface of the wafer chuck. The processing tool further includes control circuitry coupled to the motor and configured to operate the motor to rotate the wafer chuck while the temperature of the wafer chuck is increased to form a piezoelectric layer from a sol-gel solution layer on the semiconductor wafer.

Process assemblies and cable management assemblies for managing cables in tight envelopes. A processing assembly includes a top chamber having at least one substrate support, a support shaft, a robot spindle assembly, a stator and a cable management system. The cable management system includes an inner trough assembly and an outer trough assembly configured to move relative to one another, and a plurality of chain links configured to house at least one cable for delivering power to the process assembly.

A substrate holding mechanism for holding a substrate placed on a stage which is rotatable with respect to a turntable, includes a substrate holding member, provided at a peripheral portion of the stage, fixed to a rotating shaft disposed below a surface on which the substrate is placed, and contactable to a side surface of the substrate placed on the stage, a biasing member having a first end fixed to the substrate holding member at a position closer to a center of the stage than the rotating shaft, and a second end fixed at a position separated from the substrate holding member toward the center of the stage and below the rotating shaft, and a pressing member configured to press upwardly a portion of the substrate holding member where the first end of the biasing member is fixed.